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Volumn 79, Issue 10, 1996, Pages 7657-7666

Reactive molecular beam epitaxy of wurtzite GaN: Materials characteristics and growth kinetics

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001301687     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362430     Document Type: Article
Times cited : (80)

References (44)
  • 37
    • 0000695224 scopus 로고
    • Ö Aktas, W. Kim, Z. Fan, A. Botchkarev, A. Salvador, S. N. Mohammad, B. Sverdlov, and H. Morkoç, Electron Lew. 31, 1389 (1995); see also, O. Aktas, W. Kim, Z. Fan, F. Stengel, A. Botchkarev, A. Salvador, S. N. Mohammad, and H. Morkoç, IEEE International Electron Devices Meeting Technical Digest (Institute of Electrical Engineers, Piscataway, NJ, 1995).
    • (1995) Electron Lew. , vol.31 , pp. 1389
    • Aktas, Ö.1    Kim, W.2    Fan, Z.3    Botchkarev, A.4    Salvador, A.5    Mohammad, S.N.6    Sverdlov, B.7    Morkoç, H.8


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.