Vapor phase epitaxy of GaN using gallium tri-chloride and ammonia

Materials Research Society Symposium - Proceedings

Volumn 421, Issue , 1996, Pages 195-200

  Yuri, M ^a   Ueda, T ^a   Lee, H ^a   Itoh, K ^a   Baba, T ^a   Harris Jr , J S ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; ATMOSPHERIC PRESSURE; BAND STRUCTURE; CRYSTAL GROWTH; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PHOTOLUMINESCENCE; SURFACE STRUCTURE; TEMPERATURE; VAPOR PHASE EPITAXY; X RAY CRYSTALLOGRAPHY;

BAND EDGE PHOTOLUMINESCENCE; GALLIUM TRICHLORIDE; HIGH TEMPERATURE HEATING ZONE; THREE DIMENSIONAL ISLAND GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030373230     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-421-195     Document Type: Conference Paper

References (7)