The microstructure of metalorganic-chemical-vapor-deposition GaN on sapphire

MRS Bulletin

Volumn 22, Issue 7, 1997, Pages 45-51

  Hersee, S D ^a   Ramer, J C ^a   Malloy, K J ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRIC PROPERTIES; FREE ENERGY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NUCLEATION; OPTICAL PROPERTIES; SAPPHIRE; SEMICONDUCTOR GROWTH; STRAIN;

DISLOCATION DENSITY; GALLIUM NITRIDE; MISMATCH STRAIN; VOLMER-WEBER GROWTH HABIT;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031188254     PISSN: 08837694     EISSN: None     Source Type: Journal    
DOI: 10.1557/S0883769400033406     Document Type: Article

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