Growth of zinc-blende GaN on GaAs (100) substrates at high temperature using low-pressure MOVPE with a low V/III molar ratio

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 320-324

  Nakadaira, Atsushi ^a   Tanaka, Hidenao ^a  

^a NTT CORPORATION   (Japan)

Author keywords

GaAs; High temperature growth; Low V III molar ratio; Low pressure metalorganic vapor phase epitaxy; Zinc blende GaN

Indexed keywords

EID: 0000538124     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0171-z     Document Type: Article

References (17)

1. S. Nakamura, T. Mukai and M. Senoh, Appl. Phys. Lett. 64, 1687 (1994).
2. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku and Y. Sugimoto, Jpn. J. Appl. Phys. 35 L74 (1996).
3. S. Fujieda and Y. Matsumoto, Jpn. J. Appl. Phys. 30, L1665 (1991).
4. S. Strite, J. Ruan, Z. Li, A. Salvador, H. Chen, D.J. Smith, W.J. Choyke and H. Morkoç, J. Vac. Sci. Technol. B 9, 1924 (1991).
5. S. Miyoshi, K. Onabe, N. Ohkouchi, H. Yaguchi, R. Ito, S. Fukatsu and Y. Shiraki, J. Cryst. Growth 124, 439 (1992).
6. H. Okumura, S. Yoshida and T. Okahisa, Appl. Phys. Lett. 64, 2997 (1994).
7. C.H. Hong, D. Pavlidis, S.W. Brown and S. C. Rand, J. Appl. Phys. 77, 1705 (1995).
8. C.H. Hong, K. Wang and D. Pavlidis, J. Electron. Mater. 24, 213 (1995).
9. O. Brandt, H. Yang, B. Jenichen, Y. Suzuki, L. Daweritz and K.H. Ploog, Phys. Rev. B 52, R2253 (1995).
10. M. Sato, J. Apply. Phys. 78, 2123 (1995).
11. J.N. Kuznia, J.W. Yang, Q.C. Chen, S. Krishnankutty, M.A. Khan, T. George and J. Frietas, Jr., Appl. Phys. Lett. 65, 2407 (1994).
12. J.W. Yang, J.N. Kuznia, Q.C. Chen, M.A. Kahn, T. George, M. De Greaf and S. Mahajan, Appl. Phys. Lett. 67, 3759 (1995).
13. A. Nakadaira and H. Tanaka, Proc. Int. Symp. on Blue Laser and Light Emitting Diodes '96, 90 (1996).
14. T. Lei, T.D. Moustakas, R. J. Graham, Y. He and S.J. Berkowitz, J. Appl. Phys. 71, 4933 (1992).
15. M.J. Paisley, Z. Sitar, J.B. Posthill and R.F. Davis, J. Vac. Sci. Technol. A 7, 701 (1989).
16. R.C. Powell, N.-E. Lee, Y.-W. Kim and J.E. Greene, J. Appl. Phys. 73, 189 (1993).
17. M. Sato, Appl. Phys. Lett. 68, 935 (1996).