Effect of structural defects and chemical impurities on hall mobilities in low pressure MOCVD grown GaN

Journal of Electronic Materials

Volumn 26, Issue 3, 1997, Pages 243-251

  Hwang, C Y ^a   Schurman, M J ^a   Mayo, W E ^a   Lu, Y C ^b   Stall, R A ^c   Salagaj, T ^c  

^a RUTGERS UNIVERSITY   (United States)

^b RUTGERS UNIVERSITY   (United States)

^c EMCORE Corporation   (United States)

Author keywords

Compensation; Dislocations; GaN; Hall mobility; Impurities; Metalorganic chemical vapor deposition (MOCVD); Nanopipes; Stacking faults; Trimethylgallium (TMG); Twins; V III ratio

Indexed keywords

EID: 0001682067     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-997-0158-9     Document Type: Article

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