Substrate surface treatments and `controlled contamination' in GaN/sapphire MOCVD

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 57-62

  Golan, Yuval ^a   Fini, Paul ^a   Denbaars, Steven P ^a   Speck, James S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CONTAMINATION; EPITAXIAL GROWTH; HIGH TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; SURFACE ROUGHNESS; SURFACE TREATMENT;

CONTROLLED CONTAMINATION; GALLIUM NITRIDES;

SAPPHIRE;

EID: 0031379845     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-57     Document Type: Conference Paper

References (13)