Growth kinetics and structural quality in GaN epitaxy by low pressure MOVPE

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 207-212

  Briot, O ^a   Alexis, J P ^a   Gil, B ^a   Aulombard, R L ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION; AMMONIA; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL PROPERTIES; SAPPHIRE; SUBSTRATES; X RAY DIFFRACTION;

BUFFER LAYER; GALLIUM NITRIDE; GROWTH MECHANISM; GROWTH PARAMETERS; GROWTH RATE; GROWTH TEMPERATURE; NITRIDATION; STRUCTURAL QUALITY; TRIETHYLGALLIUM;

NITRIDES;

EID: 0029765050     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)