Temperature programmed desorption investigations of hydrogen and ammonia reactions on GaN

Surface Science

Volumn 381, Issue 1, 1997, Pages

  Shekhar, Ratna ^a   Jensen, Klavs F ^a  

^a Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

Ammonia; Gallium nitride; Hydrogen; III V compound semiconductors; Thermal programmed desorption

Indexed keywords

AMMONIA; AUGER ELECTRON SPECTROSCOPY; CHEMISORPTION; DECOMMISSIONING (NUCLEAR REACTORS); DEUTERIUM; FILM GROWTH; SAPPHIRE; SEMICONDUCTING FILMS; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE PROGRAMMED DESORPTION; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031167896     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(97)00085-X     Document Type: Article

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