Monitoring surface stoichiometry with the (2×2) reconstruction during growth of hexagonal-phase GaN by molecular beam epitaxy

Applied Physics Letters

Volumn 69, Issue 17, 1996, Pages 2507-2509

  Hacke, P ^a   Feuillet, G ^a,b   Okumura, H ^a   Yoshida, S ^a  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000424023     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117722     Document Type: Article

References (17)

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