Surface diffusion length of cation incorporation studied by microprobe-RHEED/SEM MBE

Journal of Crystal Growth

Volumn 163, Issue 1-2, 1996, Pages 60-66

  Nishinaga, T ^a   Shen, X Q ^a   Kishimoto, D ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CALCULATIONS; DIFFUSION; MOLECULAR BEAM EPITAXY; PRESSURE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE PHENOMENA;

ARSENIC PRESSURE; CATION INCORPORATION; DIFFUSION LENGTH; FLOW INVERSION; INVERSE PARABOLIC DEPENDENCE; MICROPROBE; SURFACE DIFFUSION; SURFACE DIFFUSION COEFFICIENT;

CRYSTAL MICROSTRUCTURE;

EID: 0030563476     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)01050-5     Document Type: Article

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