Optimization of the MOVPE growth of GaN on sapphire

Materials Science and Engineering B

Volumn 43, Issue 1-3, 1997, Pages 147-153

  Briot, O ^a   Alexis, J P ^a   Tchounkeu, M ^a   Aulombard, R L ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

Gallium nitride; MOVPE; Photoluminescence; Sapphire

Indexed keywords

COMPOSITION EFFECTS; EXCITONS; FILM GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDING; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING FILMS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EFFECTS;

GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0043229647     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(96)01852-1     Document Type: Article

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