Facets formation mechanism of GaN hexagonal pyramids on dot-patterns via selective MOVPE

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 267-271

  Hiramatsu, Kazumasa ^a   Kitamura, Shota ^a   Sawaki, Nobuhiko ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CRYSTAL MICROSTRUCTURE; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACES; THREE DIMENSIONAL;

DOT PATTERNS; FACETS FORMATION MECHANISM; GALLIUM NITRIDE; HEXAGONAL PYRAMIDS; SURFACE MIGRATION; TRIMETHYLGALLIUM;

SEMICONDUCTOR GROWTH;

EID: 0029726678     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)