Issues and examples regarding growth of AlN, GaN and AlxGa1-xN thin films via OMVPE and gas source MBE

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 3-13

  Davis, Robert F ^a   Weeks Jr , T W ^a   Bremser, M D ^a   Tanaka, S ^a   Kern, R S ^a   Sitar, Z ^a   Ailey, K S ^a   Perry, W G ^a   Wang, C ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; NUCLEATION; SAPPHIRE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS;

ACCEPTOR; ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; BUFFER LAYER; DONOR; GALLIUM NITRIDE; HETEROEPITAXIAL NUCLEATION; MONOCRYSTALLINE FILM; SURFACE MIGRATION;

FILM GROWTH;

EID: 0029746817     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (22)