New dopant precursors for n-type and p-type GaN

Journal of Crystal Growth

Volumn 170, Issue 1-4, 1997, Pages 325-328

  Ohuchi, Y ^a   Tadatomo, K ^a   Nakayama, H ^b   Kaneda, N ^b   Detchprohm, T ^b   Hiramatsu, K ^b   Sawaki, N ^b  

^a Mitsubishi Cable Industries Ltd   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; NITRIDES; ORGANOMETALLICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SILANES;

DOPANT PRECURSORS; GALLIUM NITRIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 0030704056     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)00570-2     Document Type: Article

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