The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layer

Applied Physics Letters

Volumn 68, Issue 26, 1996, Pages 3758-3760

  Lin, C F ^a   Chi, G C ^a   Feng, M S ^b   Guo, J D ^b   Tsang, J S ^c   Hong, J Minghuang ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^d INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000012578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115997     Document Type: Article

References (9)

1. S. Nakamura, Y. Harada, and M. Seno, Appl. Phys. Lett. AIP 58, 2021 (1991).
2. N. Kuwano, T. Shiraishi, A. Koga, and K. Oki, J. Cryst. Growth INS 115, 381 (1991).
3. T. Detchprohm, K. Hiramatsu, H. Amano, and I. Akasaki, Appl Phys. Lett. AIP 61, 2688 (1992).
4. Landolt-Börnstein (Springer, New York, 1982), Vol. 17.
5. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett. AIP 15, 327 (1969).
6. A. Estes Wickenden, D. K. Wickenden, and T. J. Kistenmacher, J. Appl. Phys. AIP 75, 5367 (1994).
7. J. N. Kuznia, M. Asif Khan, and D. T. Olson, J. Appl. Phys. AIP 73, 4700 (1993).
8. C. H. Lee, G. C. Chi, and C. F. Lin, J. Appl. Phys. (to be published).
9. T. Sasaki and T. Matsuoka, J. Appl. Phys AIP 77, 192 (1995).