High-quality III-V nitrides grown by metalorganic chemical vapor deposition

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 183-188

  Dupuis, R D ^a   Holmes, A L ^a   Grudowski, P A ^a   Fertitta, K G ^a   Ponce, F A ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMMONIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

GALLIUM NITRIDE; HETEROEPITAXIAL FILM; ROCKING CURVE ANALYSIS; TRIETHYLGALLIUM; TRIMETHYLALUMINUM; TRIMETHYLINDIUM;

FILM GROWTH;

EID: 0029746611     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)