Dopants and defects in semiconductors

Dopants and Defects in Semiconductors

Volumn , Issue , 2012, Pages 1-351

  McCluskey, Matthew D ^a   Haller, Eugene E ^b  

^a WASHINGTON STATE UNIVERSITY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 85055857329     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1201/b11819     Document Type: Book

References (561)

1. Akasaki, I., 2006. Key inventions in the history of nitride-based blue LED and LD. Journal of Crystal Growth 300: 2–10.
2. Bardeen, J., and W.H. Brattain. 1948. The transistor, a semiconductor triode. Phys. Rev. 74: 230–231.
3. Bardeen, J., and W. Shockley. 1950. Deformation potentials and mobilities in non-polar crystals. Phys. Rev. 80: 72–80.
4. Barnaal, D. 1982. Analog Electronics for Scientific Application, p. A292. Prospect Heights, IL: Waveland Press.
5. Böer, K.W. 1990. Survey of Semiconductor Physics. New York: Van Nostrand Reinhold. Braun, F. 1875. Über die Stromleitung durch Schwefelmetalle. Annalen der Physik und Chemie 229: 556–563. Translation in: Sze, S.M. 1991. Semiconductor Devices: Pioneering Papers. Singapore: World Scientific.
6. Chelikowsky, J.R., and M.L. Cohen. 1976. Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors. Phys. Rev. B 14: 556–582.
7. Czochralski, J. 1918. Ein neues Verfahren zur Messung der Kristallisationsgeschwindig-heit der Metalle. Z. Phys. Chemie 92: 219–221.
8. Goñi, A.R., and K. Syassen. 1998. Optical properties of semiconductors under pressure. In High Pressure in Semiconductor Physics I, eds. T. Suski and W. Paul, 146–244. San Diego: Academic Press.
9. Horn, M., C.F. Schwerdtfeger, and E.P. Meagher. 1972. Refinement of the structure on anatase at several temperatures. Zeitschrift für Kristallographie 136: 273–281.
10. Johnson, N.M., A.V. Nurmikko, and S.P. DenBaars. 2000. Blue laser diodes. Phys. Today 53(10): 31–36.
11. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. New York: John Wiley & Sons.
12. Long, D. 1968. Energy Bands in Semiconductors. New York: John Wiley & Sons.
13. Luttinger, T.M. 1956. Quantum theory of cyclotron resonance in semiconductors: General theory. Phys. Rev. 102: 1030–1041.
14. Madelung, O., ed. 1996. Semiconductors—Basic Data, 2nd ed. Berlin: Springer.
15. Nakamura, S., and G. Fasol. 1997. The Blue Laser Diode. Berlin: Springer.
16. Nelmes, R.J., and M.I. McMahon. 1998. Structural transitions in the group IV, III-V and II-VI semiconductors under pressure. In High Pressure in Semiconductor Physics I, eds. T. Suski and W. Paul, 146–244. San Diego: Academic Press.
17. Phillips, J.C. 1970. Bonds and bands in semiconductors. Science 169: 1035–1042.
18. Riordan, M., and L. Hoddeson. 1997. Crystal Fire: The Birth of the Information Age. New York: W.W. Norton.
19. Round, H.J. 1907. A note on carborundum. Electrical World 49: 309.
20. Sah, C.T. 1988. Evolution of the MOS transistor—From conception to VSLI. Proc. IEEE 76: 1280–1326.
21. Schottky, W. 1938. Halbleitertheorie der Sperrschicht. Naturwissenschaften 26: 843.
22. Schubert, E.F. 2006. Light-Emitting Diodes, 2nd ed. Cambridge: Cambridge University Press.
23. Seeger, K. 1982. Semiconductor Physics, 2nd ed. Berlin: Springer-Verlag.
24. Seitz, F. 1995. Research on silicon and germanium in World War II. Phys. Today 48(1): 22–27.
25. Shockley, W., M. Sparks, and G.K. Teal. 1951. P-n junction transistors. Phys. Rev. 83: 151–162.
26. Sze, S.M. 1981. Physics of Semiconductor Devices, 2nd ed. New York: John Wiley & Sons.
27. Torrey, H.C., and C.A. Whitmer. 1948. Crystal Rectifiers. New York: McGraw-Hill.
28. Varshni, Y.P. 1967. Temperature dependence of the energy gap in semiconductors. Physica 34: 149–154.
29. Vurgaftman, I., J.R. Meyer, and L.R. Ram-Mohan. 2001. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89: 5815–5875.
30. Wilson, A.H. 1931. The theory of electronic semi-conductors. Proc. Roy. Soc. London Ser. A 133: 458–491.
31. Yu, P.Y., and M. Cardona. 1996. Fundamentals of Semiconductors. Berlin: Springer-Verlag.
32. Anderson, P.W. 1961. Localized magnetic states in metals. Phys. Rev. 124: 41–53.
33. Andrews, J.M., and J.C. Phillips. 1975. Chemical bonding and structure of metal-semiconductor interfaces. Phys. Rev. Lett. 35: 56–59.
34. Bardeen, J. 1947. Surface states and rectification at a metal semi-conductor contact. Phys. Rev. 71: 717–727.
35. Biernacki, S., U. Scherz, and B.K. Meyer. 1993. Electronic properties of A centers in CdTe: A comparison with experiment. Phys. Rev. B 48: 11726–11731.
36. Brillson, L.J. 1983. Advances in understanding metal-semiconductor interfaces by surface science techniques. J. Phys. Chem. Solids 44: 703–733.
37. 2 interface. Appl. Phys. Lett. 43: 1111–1113.
38. 1-xAs alloys. Phys. Rev. Lett. 61: 873–876.
39. Corbett, J.W., G.D. Watkins, R.M. Chrenko, and R.S. McDonald. 1961. Defects in irradiated silicon. II. Infrared absorption of the Si-A center. Phys. Rev. 121: 1015–1022.
40. Cotton, F.A. 1990. Chemical Applications of Group Theory, 3rd ed. New York: John Wiley & Sons.
41. Davies, G., S.C. Lawson, A.T. Collins, A. Mainwood, and S.J. Sharp. 1992. Vacancy-related centers in diamond. Phys. Rev. B 46: 13157–13170.
42. Falicov, L.M. 1989. Group Theory and Its Physical Applications. Midway Reprint ed. Chicago: University of Chicago Press.
43. Föll, H., and B.O. Kolbesen. 1975. Formation and nature of swirl defects in silicon. Appl. Phys. A 8: 319–331.
44. Föll, H., U. Gösele, and H.O. Kolbesen. 1981. Microdefects in silicon and their relation to point defects. J. Cryst. Growth 52: 907–916.
45. Götz, W., and N.M. Johnson. Characterization of dopants and deep-level defects in gallium nitride. In Semiconductors and Semimetals, Vol. 57, eds. J. Pankove and T. Moustakas, pp. 185–207. New York: Academic Press.
46. Haller, E.E. 1978. Isotope shifts in the ground state of shallow, hydrogenic centers in pure germanium. Phys. Rev. Lett. 40: 584–586.
47. Haller, E.E. 1991. Hydrogen-related phenomena in crystalline germanium. In Semiconductors and Semimetals Vol. 34, eds. J.I. Pankove and N.M. Johnson, pp. 113–137. San Diego: Academic Press.
48. Henisch, H.K. 1984. Semiconductor Contacts. Oxford: Clarendon Press.
49. Holt, D.B., and B.G. Yacobi. 2007. Extended Defects in Semiconductors. New York: Cambridge University Press.
50. Hrostowski, H.J., and R.H. Kaiser. 1957. Infrared absorption of oxygen in silicon. Phys. Rev. 107: 966–972.
51. Istratov, A.A., H. Hieslmair, and E.R. Weber. 1999. Iron and its complexes with silicon. Appl. Phys. A 69: 13–44.
52. Janotti, A., and C.G. Van de Walle. 2007. Hydrogen multicentre bonds. Nature Materials 6: 44–47.
53. Johnson, N.M., C. Herring, and D.J. Chadi. 1986. Interstitial hydrogen and neutralization of shallow-donor impurities in single-crystal silicon. Phys. Rev. Lett. 56: 769–772.
54. Johnson, N.M. 1991. Neutralization of donor dopants and formation of hydrogen-induced defects in n-type silicon. In Semiconductors and Semimetals Vol. 34, eds. J.I. Pankove and N.M. Johnson, pp. 113–137. San Diego, CA: Academic Press.
55. Johnson, N.M., and C.G. Van de Walle. 1999. Isolated monatomic hydrogen in silicon. In Semiconductors and Semimetals Vol. 61, ed. N.H. Nickel, pp. 113–137. San Diego, CA: Academic Press.
56. Kaminska, M., and E.R. Weber. 1993. EL2 defect in GaAs. In Semiconductors and Semimetals Vol. 38, ed. E. Weber, pp. 59–89. San Diego, CA: Academic Press.
57. Kilic, C., and A. Zunger. 2002. N-type doping of oxides by hydrogen. Appl. Phys. Lett. 81: 73–75.
58. Li, X.-B., S. Limpijumnong, W.Q. Tian, H.-B. Sun, and S.B. Zhang. 2008. Hydrogen in ZnO revisited: Bond center versus antibonding site. Phys. Rev. B 78: 113203 (4 pages).
59. Lide, D.R., ed. 2008. CRC Handbook on Chemistry and Physics, 89th ed. Boca Raton, FL: CRC Press.
60. Louie, S.G., J.R. Chelikowsky, and M.L. Cohen. 1977. Ionicity and the theory of Schottky barriers. Phys. Rev. B 15: 2154–2162.
61. McCluskey, M.D., and E.E. Haller. 1999. Hydrogen in III-V and II-VI semiconductors. In Semiconductors and Semimetals Vol. 61, ed. N.H. Nickel, pp. 373–440. San Diego, CA: Academic Press.
62. McCluskey, M.D., and S.J. Jokela. 2009. Defects in ZnO. J. Appl. Phys. 106: 071101 (13 pages).
63. Mönch, W. 2001. Semiconductor Surfaces and Interfaces, 3rd edition. Berlin: Springer.
64. Mooney, P.M. 1990. Deep donor levels (DX centers) in III-V semiconductors. J. Appl. Phys. 67: R1–R26.
65. Nelson, R.J. 1977. Long-lifetime photoconductivity effect in n-type GaAlAs. Appl. Phys. Lett. 31: 351–353.
66. Newman, R.C. 2000. Oxygen diffusion and precipitation in Czochralski silicon. J. Phys.: Condens. Matter 12: R335–R365.
67. Ottaviani, G., K.N. Tu, and J.W. Mayer. 1980. Interfacial reaction and Schottky barrier in metalsilicon systems. Phys. Rev. Lett. 44: 284–287.
68. Pajot, B. 1994. Some atomic configurations of oxygen. In Semiconductors and Semimetals Vol. 42, ed. F. Shimura, pp. 191–249. New York: Academic Press.
69. Pankove, J.I., P.J. Zanzucchi, C.W. Magee, and G. Lucovsky. 1985. Hydrogen localization near boron in silicon. Appl. Phys. Lett. 46: 421–423.
70. Pearton, S.J., J.W. Corbett, and M. Stavola. 1992. Hydrogen in Crystalline Semiconductors. Berlin: Springer-Verlag.
71. Queisser, H.J. 1983. Electrical properties of dislocations and boundaries in semiconductors. In MRS Symp. Proc. Vol. 14, Defects in Semiconductors II, eds. S. Mahajan and J.W. Corbett, pp. 323–341. New York: North-Holland.
72. Read, W.T. 1953. Dislocations in Crystals. New York: McGraw-Hill.
73. Sah, C.T., J.Y.C. Sun, and J.J. Tzou. 1983. Deactivation of the boron acceptor in silicon by hydrogen. Appl. Phys. Lett. 43: 204–206.
74. 2. MRS Bulletin 33: 1017–1025.
75. Seeger, A., and K.P. Chick. 1968. Diffusion mechanisms and point defects and silicon and germanium. Phys. Stat. Solid. 29: 455–542.
76. Shan, W., W. Walukiewicz, J.W. Ager et al. 1999. Band anticrossing in GaInNAs alloys. Phys. Rev. Lett. 82: 1221–1224.
77. Sharma, B.L., ed. 1984. Metal-Semiconductor Schottky Barrier Functions and Their Applications. New York: Plenum Press.
78. Shi, G.A., M. Stavola, W. Beall Fowler, and E.E. Chen. 2005. Rotational-vibrational transitions of interstitial HD in Si. Phys. Rev. B 72: 085207 (6 pages).
79. Shockley, W., and W.T. Read. 1949. Quantitative predictions from dislocation models of crystal grain boundaries. Phys. Rev. 75: 692.
80. Stein, H.J. 1986. Nitrogen in crystalline Si. In MRS Symp. Proc. Vol. 59, Oxygen, Carbon, Hydrogen and Nitrogen in Silicon, eds. J.C. Mikkelson, Jr. et al., pp. 523–535. New York: North-Holland.
81. Sze, S.M. 1981. Physics of Semiconductor Devices, 2nd ed., p. 42. New York: John Wiley & Sons.
82. Sze, S.M., and K.K. Ng. 2007. Physics of Semiconductor Devices, 3rd ed. Hoboken, NJ: John Wiley & Sons.
83. Tu, K.N., R.D. Thompson, and B.Y. Tsaur. 1981. Low Schottky barrier of rare-earth silicide on n-Si. Appl. Phys. Lett. 38: 626–629.
84. Vogel, F.L., W.G. Pfann, H.E. Corey, and E.E. Thomas. 1953. Observations of dislocations in lineage boundaries in germanium. Phys. Rev. 90: 489–490.
85. Walukiewicz, W. 1989. Amphoteric native defects in semiconductors. Appl. Phys. Lett. 54: 2094–2096.
86. Walukiewicz, W., W. Shan, K.M. Yu et al. 2000. Interaction of localized electronic states with the conduction band: Band anticrossing in II-VI semiconductor ternaries. Phys. Rev. Lett. 85: 1552–1555.
87. Watkins, G.D., and J.W. Corbett. 1964. Defects in irradiated silicon: Electron paramagnetic resonance and electron-nuclear double resonance of the Si-E center. Phys. Rev. 134: A1359–A1377.
88. Watkins, G.D., and J.W. Corbett. 1965. Defects in irradiated silicon: Electron paramagnetic resonance of the divacancy. Phys. Rev. 138: A543–A555.
89. Wolk, J.A., M.B. Kruger, J.N. Heyman, W. Walukiewicz, R. Jeanloz, and E.E. Haller. 1991. Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure. Phys. Rev. Lett. 66: 774–777.
90. Yu, P.Y., and M. Cardona. 1996. Fundamentals of Semiconductors. Berlin: Springer-Verlag.
91. Arizumi, T., and N. Kobayashi. 1972.Theoretical studies of the temperature distribution in crystal being grown by the Czochralski method. J. Crystal Growth 13/14: 615–618.
92. Auston, D.H., C.M. Surko, T.N.C. Venkatesan, R.E. Slusher, and J.A. Golovchenko. 1978. Time-resolved reflectivity of ion-implanted silicon during laser annealing. Appl. Phys. Lett. 33: 437–439.
93. Bauser, E., and H.P. Strunk. 1984. Microscopic growth mechanisms of semiconductors— Experiments and models. J. Crystal Growth 69: 561–580.
94. Bohm, J. 1985. The history of crystal growth. Acta Physica Hungarica 57: 161–178.
95. Bustarret, E., C. Marcenat, P. Achatz, J. Kačmarčik, F. Lévy, A. Huxley, L. Ortéga, E. Bourgeois, X. Blase, D. Débarre, and J. Boulmer. 2006. Superconductivity in doped cubic silicon. Nature 444: 465–468.
96. Capper, P., and M. Mauk, eds. 2007. Liquid Phase Epitaxy of Electronic, Optical, and Optoelectronic Materials. New York: John Wiley & Sons.
97. Carruthers, J.R., and A.F. Witt. 1975. Transient segregation effects in Czochralski growth. In Crystal Growth and Characterization, eds. R. Ueda and J.B. Mullin, pp. 107–154. Amsterdam: North Holland.
98. Carter, G., and W.A. Grant. 1976. Ion Implantation of Semiconductors. New York: John Wiley & Sons.
99. Csepregi, L., J. Gyulai, and S.S. Lau. 1996. The early history of solid phase epitaxial growth. Mater. Chem. Phys. 46: 178–180.
100. Current, M.I., and M.J. Markert. 1984. Mapping of ion implanted wafers. In Ion Implantation Science and Technology, ed. J.F. Ziegler, p. 505. New York: Academic Press.
101. Czochralski, J. 1918. Ein neues Verfahren zur Messung der Kristallisationsgeschwindig-heit der Metalle. Z. Phys. Chemie 92: 219–221.
102. Eisen, Y., and A. Shor. 1998. CdTe and CdZnTe materials for room-temperature X-ray and gamma ray detectors. J. Cryst. Growth 184: 1302–1312.
103. Foxon, C.T., and B.A. Joyce. 1990. Growth of thin films and heterostructures of III-V compounds by molecular beam epitaxy. In Growth and Characterisation of Semiconductors, eds. R.A. Stradling and P.C. Klipstein, pp. 35–64. New York: Adam Hilger.
104. Fritzsche, H., and M. Cuevas. 1960. Impurity conduction in transmutation-doped p-type germanium. Phys. Rev. 119: 1238–1245.
105. Gamo, K. 1970. Enhanced diffusion of high-temperature ion-implanted antimony into silicon. Appl. Phys. Lett. 17: 391–393.
106. Grossmann, G., and L. Ledebo, eds. 1988. Semi-Insulating III-V Materials. Boca Raton, FL: Taylor & Francis.
107. Haller, E.E. 1995. Isotopically engineered semiconductors. J. Appl. Phys. 77: 2857–2878.
108. Haller, E.E., W.L. Hansen, and F.S. Goulding. 1981. Physics of ultra-pure germanium. Adv. Phys. 30: 93–138.
109. Haller, E.E., and F.S. Goulding. 1993. Nuclear radiation detectors. In Handbook on Semiconductors, Vol. 4, 2nd ed., ed. C. Hilsum, pp. 937–963. New York: Elsevier.
110. Hansen, M. 1958. Constitution of Binary Alloys. New York: McGraw-Hill.
111. Huff, H.R. 1983. Chemical impurities and structural imperfections in semiconductor silicon, Part 1. Solid State Techn. 26: 89–95.
112. Kamath, G.S. 1984. Growth of GaAs single crystals for optoelectronic applications. Solid State Techn. 27: 173–175.
113. Keller, W., and A. Mühlbauer. 1981. Floating-Zone Silicon. New York: Marcel Dekker.
114. Kerrien, G., J. Boulmer, D. Débarre, D. Bouchier, A. Grouillet, and D. Lenoble. 2002. Ultra-shallow, super-doped and box-like junctions realized by laser-induced doping. Appl. Surf. Sci. 186: 45–51.
115. Kramer, H.G. 1983. Float-zoning of semiconductor silicon: A perspective. Solid State Techn. 26: 137–142.
116. Kuphal, E. 1991. Liquid-phase epitaxy. Appl. Phys. A 52: 380–409.
117. Langlois, W.E. 1981. Convection in Czochralski growth melts. Physicochem. Hydrodynamics 2: 245–261.
118. Larrabee, R.D., ed. 1984. Neutron Transmutation Doping of Semiconductor Materials. New York: Plenum Press.
119. Laughlin, R.B. 1983. Anomalous quantum Hall effect: An incompressible quantum fluid with fractionally charged excitations. Phys. Rev. Lett. 50: 1395–1398.
120. Lindhard, J. 1965. Influence of crystal lattice on motion energetic charged particles. Mat. Fys. Medd. Dan. Vid. Selsk. 34(14): 1–64.
121. Look, D.C., and J. S. Blakemore, eds. 1984. Semi-Insulating III-V Materials: Kah-nee-ta. Nantwich, UK: Shiva.
122. Mahajan, S., and K.S. Sree Harsha. 1999. Principles of Growth and Processing of Semiconductors. New York: WCB/McGraw-Hill.
123. Makram-Ebeid, S., and B. Tuck, eds. 1982. Semi-Insulating III-V Materials: Evian. Nantwich, UK: Shiva.
124. Mayer, J.W., L. Eriksson, and J.A. Davis. 1970. Ion Implantation in Semiconductors. New York: Academic Press.
125. Meese, J., ed. 1979. Neutron Transmutation Doping in Semiconductors. New York: Plenum Press.
126. Minami, T. 2005. Transparent conducting oxide semiconductors for transparent electrodes. Semicond. Sci. Technol. 20: S35–S44.
127. Moll, A.J., K.M. Yu, W. Walukiewicz, W. L. Hansen, and E. E. Haller. 1992. Co-implantation and electrical activity of C in GaAs: Stoichiometry and damage effects. Appl. Phys. Lett. 60: 2383–2385.
128. Moody, J.W., and R.A. Frederick. 1983. Developments in Czochralski silicon crystal growth. Solid State Techn. 26: 221–225.
129. Mühlbauer, A., and E. Sirtl. 1974. Lamellar growth phenomena in <111>-oriented dislocation-free float-zoned silicon single crystals. Phys. Stat. Sol. (a) 23: 555–565.
130. Müller, G. 2007. The Czochralski method—Where we are 90 years after Jan Czochralski’s invention. Cryst. Res. Technol. 42: 1150–1161.
131. Nakamura, S., T. Mukai, and M. Senoh. 1994. Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes. Appl. Phys. Lett. 64: 1687–1689.
132. Nelson, H. 1963. Epitaxial growth from the liquid state and its application to the fabrication of tunnel and laser diodes. RCA Review 24: 603–615.
133. Ohring, M. 1992. The Materials Science of Thin Films. New York: Academic Press.
134. Pamplin, B.R., ed. 1975. Crystal Growth. Oxford: Pergamon Press.
135. Pashley, D.W. 1990. The basics of epitaxy. In Growth and Characterisation of Semiconductors, eds. R.A. Stradling and P.C. Klipstein, pp. 1–16. New York: Adam Hilger.
136. Pearton, S.J. 1993. Ion implantation in III-V semiconductor technology. Int. J. Mod. Phys. B 7: 4687–4761.
137. Pfann, W.G. 1966. Zone Melting, 2nd ed., 12. New York: John Wiley & Sons.
138. Puurunen, R.L. 2005. Surface chemistry of atomic layer deposition: A case study for the trimeth-ylaluminum/water process. J. Appl. Phys. 97: 121301 (52 pages).
139. Rea, S.N. 1981. Czochralski silicon pull rate limits. J. Cryst. Growth 54: 267–274.
140. Ruge, I., H. Müller, and H. Ryssel. 1972. Die Ionenimplantation als Dotiertechnologie. Festkörperprobleme (Adv. Solid State Phys.) 12: 23–106.
141. Ruge, I. 1975. Halbleiter Technologie, 121. Berlin: Springer-Verlag.
142. Runyan, W.R. 1965. Silicon Semiconductor Technology. New York: McGraw-Hill.
143. Ryssel, H., and I. Ruge. 1986. Ion Implantation. New York: John Wiley & Sons.
144. Schnöller, M.S. 1974. Breakdown behavior of rectifiers and thyristors made from striation-free silicon. IEEE Trans. Electr. Dev. ED-21: 313–314.
145. Shaw, D.W. 1975. Kinetics and mechanisms of epitaxial growth of semiconductors. In Crystal Growth and Characterization, eds.R.Ueda and J.B.Mullin, p.208.Amsterdam: North-Holland.
146. Stephens, K.G. 1984. An introduction to ion sources. In Ion Implantation Science and Technology, ed. J.F. Ziegler, p. 414. New York: Academic Press.
147. xTe. Nucl. Instrum. Meth. Phys. Res. A 380: 148–152.
148. Tamura, M. 1973. Secondary defects in phosphorus-implanted silicon. Appl. Phys. Lett. 23: 651–653.
149. Thomas, R.N., H.M. Hobgood, P.S. Ravishankar, and T.T. Braggins. 1990. Melt growth of large diameter semiconductors. Solid State Technol. 33: April (pp. 163–167), May (pp. 121–127), and June (pp. 83–86).
150. Trumbore, F.A. 1960. Solid solubilities of impurity elements in germanium and silicon. Bell Syst. Tech. J. 39: 205–234.
151. Tsui, D.C., H.L. Stormer, and A.C. Gossard. 1982. Two-dimensional magnetotransport in the extreme quantum limit. Phys. Rev. Lett. 48: 1559–1562.
152. Von Klitzing, K., G. Dorda, and M. Pepper. 1980. New method for high-accuracy determination of the fine-structure constant based on quantized Hall resistance. Phys. Rev. Lett. 45: 494–497.
153. White, C.W., W.H. Christie, B.R. Appleton, S.R. Wilson, P.P. Pronko, and C.W. Magee. 1978. Redistribution of dopants in ion-implanted silicon by pulsed-laser annealing. Appl. Phys. Lett. 33: 662–664.
154. Witt, A.F., and H.C. Gatos. 1966. Impurity distribution in single crystals. J. Electrochem. Soc. 113: 808–813.
155. Yoshihiro, N. 1980. Damage dependent electrical activation of phosphorus implanted in silicon. Radiation Effects and Defects in Solids 47: 85–90.
156. Anderson, P.W. 1958. Absence of diffusion in certain random lattices. Phys. Rev. 109: 1492–1505.
157. Austin, B.J., V. Heine, and L.J. Sham. 1962. General theory of pseudopotentials. Phys. Rev. 127: 276–282.
158. Baldereschi, A., and L.O. Lipari. 1973. Spherical model of shallow acceptor states in semiconductors. Phys. Rev. B 8: 2697–2709.
159. Bishop, S. 1986. Iron impurity centers in III-V semiconductors. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 541–626. New York: Gordon and Breach.
160. Blakemore, J.S. 1987. Semiconductor Statistics, 2nd ed. New York: Dover.
161. Chambers, S.A., and R.F. Farrow. 2003. New possibilities for ferromagnetic semiconductors. MRS Bull. 28: 729–733.
162. Clerjaud, B. 1985. Transition-metal impurities in III-V compounds. J. Phys. C 18: 3615–3661.
163. Cotton, F.A. 1990. Chemical Applications of Group Theory, 3rd ed. New York: John Wiley & Sons.
164. Dietl, T., H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand. 2000. Zener model description of ferromagnetism in zinc-blende magnetic semiconductors. Science 287: 1019–1022.
165. Drabold, D.A., and S. Estreicher, eds. 2007. Theory of Defects in Semiconductors. Berlin: Springer.
166. Dubon, O.D., W. Walukiewicz, J.W. Beeman, and E.E. Haller. 1997. Direct observation of the Hubbard gap in a semiconductor. Phys. Rev. Lett. 78: 3519–3522.
167. Eisberg, R., and R. Resnick. 1985. Quantum Physics of Atoms, Molecules, Solids, Nuclei, and Particles, 90–95. New York: John Wiley & Sons.
168. Falicov, L.M. 1989. Group Theory and Its Physical Applications. Midway Reprint ed. Chicago: University of Chicago Press.
169. Faulkner, R.A. 1969. Higher donor excited states for prolate-spheroid conduction bands: A reevaluation of silicon and germanium. Phys. Rev. 184: 713–721.
170. Fiorini, E. 1998. CUORE: A cryogenic underground observatory for rare events. Phys. Rep.— Rev. Sec. Phys. Lett. 307: 309–317.
171. Grove, A.S. 1967. Physics and Technology of Semiconductor Devices. New York: John Wiley & Sons.
172. Haller, E.E., W.L. Hansen, and F.S. Goulding. 1981. Physics of ultra-pure germanium. Adv. Phys. 30: 93–138.
173. Haller, E.E. 1991. Hydrogen-related phenomena in crystalline germanium. In Semiconductors and Semimetals Vol. 34, eds. J.I. Pankove and N.M. Johnson, pp. 113–137. San Diego, CA: Academic Press.
174. Hohenberg, P., and W. Kohn. 1964. Inhomogeneous electron gas. Phys. Rev. 136: B864–B870.
175. Hubbard, J. 1964. Electron correlations in narrow energy bands III. An improved solution. Proc. Roy. Soc. A 281: 401–419.
176. Itoh, K.M., W. Walukiewicz, H.D. Fuchs, J.W. Beeman, E.E. Haller, J.W. Farmer, and V.I. Ozhogin. 1994. Neutral impurity scattering in isotopically engineered Ge. Phys. Rev. B 50: 16995–17000.
177. 70Ge:Ga. Phys. Rev. Lett. 77: 4058–4061.
178. Jagannath, C., Z.W. Grabowski, and A.K. Ramdas. 1981. Linewidths of the electronic excitation spectra of donors in silicon. Phys. Rev. B 23: 2082–2098.
179. Janotti, A., and C.G. Van de Walle. 2007. Native point defects in ZnO. Phys. Rev. B 76: 165202 (22 pages).
180. Kamimura, H., and H. Aoki. 1989. The Physics of Interacting Electrons in Disordered Systems. Oxford: Clarendon Press.
181. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. John Wiley & Sons.
182. Kohn, W., and J.M. Luttinger. 1955. Theory of donor states in silicon. Phys. Rev. 98: 915–922.
183. Kohn, W. 1999. Nobel lecture: Electronic structure of matter-wave functions and density functionals. Rev. Mod. Phys. 71: 1253–1266.
184. Luttinger, J.M., and W. Kohn. 1955. Motion of electrons and holes in perturbed periodic fields. Phys. Rev. 97: 869–883.
185. McCluskey, M.D., and S.J. Jokela. 2009. Defects in ZnO. J. Appl. Phys. 106: 071101.
186. Mott, N.F. 1972. Conduction in non-crystalline systems IX. The minimum metallic conductivity. Philos. Mag. 26:1015–1026.
187. Mott, N.F. 1990. Metal-Insulator Transition. London: Taylor & Francis.
188. Ohno, H. 1998. Making nonmagnetic semiconductors ferromagnetic. Science 281: 951–956.
189. Pajot, B. 2010. Optical Absorption of Impurities and Defects in Semiconducting Crystals I: Hydrogen-Like Centres. Berlin: Springer-Verlag.
190. Pantelides, S.T. 1986. Perspectives in the past, present, and future of deep centers in semiconductors. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 1–86. New York: Gordon and Breach.
191. Pearton, S.J., C.R. Abernathy, M.E. Overberg et al. 2003. Wide band gap ferromagnetic semiconductors and oxides. J. Appl. Phys. 93: 1–13.
192. Rieke, G. H., E.T. Young, C.W. Engelbracht et al. 2004. The multiband imaging photometer for spitzer (MIPS). Astrophys. J. Suppl. Ser. 154: 25–29.
193. Seeger, K. 1982. Semiconductor Physics: An Introduction, 2nd ed. Berlin: Springer-Verlag.
194. Shklovskii, B.I., and A.L. Efros. 1984. Electronic Properties of Doped Semiconductors. Solid-State Series Vol. 45. Berlin: Springer-Verlag.
195. Snoke, D.W. 2009. Solid State Physics: Essential Concepts. San Francisco, CA: Addison-Wesley.
196. Steane, A. 1998. Quantum computing. Rep. Prog. Phys. 61: 117–173.
197. Van de Walle, C.G., and J. Neugebauer. 2003. Universal alignment of hydrogen levels in semiconductors, insulators, and solutions. Nature 423: 626–628.
198. Watkins, G.D. 1986. The lattice vacancy in silicon. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 147–183. New York: Gordon and Breach.
199. xAs on its Curie temperature. Phys. Rev. B 65: 201303 (4 pages).
200. Yu, P.Y., and M. Cardona. 1996. Fundamentals of Semiconductors. Berlin: Springer-Verlag.
201. Artacho, E., A. Lizón-Nordström, and F. Ynduráin. 1995. Geometry and quantum delocalization of interstitial oxygen in silicon. Phys. Rev. B 51: 7862–7865.
202. Barker, A.S. Jr., and A.J. Sievers. 1975. Optical studies of the vibrational properties of disordered solids. Rev. Mod. Phys. 47: S1-179.
203. Bosomworth, D.R., W. Hayes, A.R.L. Spray, and G.D. Watkins. 1970. Absorption of oxygen in silicon in the near and the far infrared. Proc. R. Soc. London, Ser. A. 317: 133–152.
204. Cardona, M. 1982. Resonance phenomena. In Light Scattering in Solids II, eds. M. Cardona and G. Guntherodt, pp. 19–98. Berlin: Springer.
205. Chevallier, J., B. Clerjaud, and B. Pajot. 1991. Neutralization of defects and dopants in III-V semiconductors. In Semiconductors and Semimetals, Vol. 34, eds. J.I. Pankove and N.M. Johnson, pp. 447–510. San Diego, CA: Academic Press.
206. Cotton, F.A. 1990. Chemical Applications of Group Theory, 3rd ed. New York: John Wiley & Sons.
207. As complex in GaAs. Phys. Rev. B 48: 17106–17113.
208. As stretch mode in GaAs. Semicond. Sci. Tech. 11: 455–457.
209. – ions in the alkaline earth fluorides. Proc. R. Soc. London, Ser. A 289: 1–33.
210. Ewels, C.P., S. Öberg, R. Jones, B. Pajot, and P.R. Briddon. 1996. Vacancy-and acceptor-H complexes in InP. Semicond. Sci. Technol. 11: 502–507.
211. P gap mode in GaP. Phys. Rev. B 51: 14758–14761.
212. Hayes, W., M.C.K. Wiltshire, and P.J. Dean. 1970. Local vibrational modes of carbon in GaP. J. Phys. C 3: 1762–1766.
213. 2* defect in crystalline silicon. Phys. Rev. Lett. 71: 875–8.
214. Hrostowski, H.J., and R.H. Kaiser. 1957. Infrared absorption of oxygen in silicon. Phys. Rev. 107: 966–972.
215. 18O under pressure. Phys. Rev. Lett. 90: 095505 (4 pages).
216. Kaiser, W., P.H. Keck, and C.F. Lange. 1956. Infrared absorption and oxygen content in silicon and germanium. Phys. Rev. 101: 1264–1268.
217. Keating, P.N. 1966. Effect of invariance requirements on the elastic strain energy of crystals with application to the diamond structure. Phys. Rev. 145: 637–645.
218. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. New York: John Wiley & Sons.
219. Lavrov, E.V., J. Weber, F. Börrnert, C.G. Van de Walle, and R. Helbig. 2002. Hydrogen-related defects in ZnO studied by infrared absorption spectroscopy. Phys. Rev. B 66: 165205 (7 pages).
220. As. Semicond. Sci. Technol. 9: 1054–1061.
221. Leitch, A.W.R., V. Alex, and J. Weber. 1998. Raman spectroscopy of hydrogen molecules in crystalline silicon. Phys. Rev. Lett. 81: 421–424.
222. Lüpke, G., X. Zhang, B. Sun, A. Fraser, N.H. Tolk, and L.C. Feldman. 2002. Structure-dependent vibrational lifetimes of hydrogen in silicon. Phys. Rev. Lett. 88: 135501 (4 pages).
223. Lüpke, G., N.H. Tolk, and L.C. Feldman. 2003. Vibrational lifetimes of hydrogen in silicon. J. Appl. Phys. 93: 2317–2336.
224. Mayur, A.J., M. Dean Sciacca, M.K. Udo et al. 1994. Fine structure of the asymmetric stretching vibration of dispersed oxygen in monoisotopic germanium. Phys. Rev. B 49: 16293–16299.
225. McCluskey, M.D., and E.E. Haller. 1997. Interstitial oxygen in silicon under hydrostatic pressure. Phys. Rev. B 56: 9520–9523.
226. McCluskey, M.D., and E.E. Haller. 1999. Hydrogen in III-V and II-V semiconductors. In Semiconductors and Semimetals Vol. 61, ed. N.H. Nickel, 373–340. San Diego: Academic Press.
227. McCluskey, M.D. 2000. Local vibrational modes of impurities in semiconductors. J. Appl. Phys. 87: 3593–3617.
228. McCluskey, M.D., S.J. Jokela, and W.M. Hlaing Oo. 2006. Hydrogen in bulk and nanoscale ZnO. Physica B 376–377: 690–693.
229. McCluskey, M.D. 2009. Resonant interaction between hydrogen vibrational modes in AlSb:Se. Phys. Rev. Lett. 102: 135502 (4 pages).
230. Morse, P.M. 1929. Diatomic molecules according to wave mechanics. II. Vibrational levels. Phys. Rev. 34: 57–64.
231. Newman, R.C., F. Thompson, M. Hyliands, and R.F. Peart. 1972. Boron and carbon impurities in gallium arsenide. Solid State Commun. 10: 505–507.
232. Newman, R.C. 1993. Local vibrational mode spectroscopy of defects in III/V compounds. In Semiconductors and Semimetals Vol. 38, ed. E. Weber, pp. 117–187. San Diego, CA: Academic Press.
233. Nielsen, B. Bech, L. Hoffman, and M. Budde. 1996. Si-H stretch modes of hydrogen-vacancy defects in silicon. Mater. Sci. Eng. B 36: 259–263.
234. Pajot, B., R.C. Newman, R. Murray, A. Jalil, J. Chevallier, and R. Azoulay. 1988. High-resolution infrared study of the neutralization of silicon donors in gallium arsenide. Phys. Rev. B 37: 4188–4195.
235. Pajot, B. 1994. Some atomic configurations of oxygen. In Semiconductors and Semimetals Vol. 42, ed. F. Shimura, pp. 191–249. San Diego, CA: Academic Press.
236. Persson, B.N.J., and R. Ryberg. 1985. Brownian motion and vibrational phase relaxation at surfaces: CO on Ni(111). Phys. Rev. B 32: 3586–3596.
237. Pritchard, R.E., M.J. Ashwin, J.H. Tucker, and R.C. Newman. 1998. Isolated interstitial hydrogen molecules in hydrogenated crystalline silicon. Phys. Rev. B 57: R15048–R15051.
238. Raman, C.V. 1928. A change of wavelength in light scattering. Nature 121: 619–620.
239. Shi, G. Alvin, M. Stavola, W. Beall Fowler, and E. Chen. 2005. Rotational-vibrational transitions of interstitial HD in Si. Phys. Rev. B 72: 085207 (6 pages).
240. Stallinga, P., P. Johannesen, S. Herstrøm, K. Bonde Nielsen, B. Bech Nielsen, and J.R. Byberg. 1998. Electron paramagnetic study of hydrogen-vacancy defects in crystalline silicon. Phys. Rev. B 58: 3842–3852.
241. Sun, B., Q. Yang, R.C. Newman et al. 2004. Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium. Phys. Rev. Lett. 92: 185503 (4 pages).
242. Van de Walle, C.G. 1997. Interactions of hydrogen with native defects in GaN. Phys. Rev. B 56: R10020–R10023.
243. Vetterhöffer, J., and J. Weber. 1996. Hydrogen passivation of shallow donors S, Se, and Te in GaAs. Phys. Rev. B 53: 12835–12844.
244. Watkins, G.D., W.B. Fowler, M. Stavola et al. 1990. Identification of a Fermi resonance for a defect in silicon: Deuterium-boron pair. Phys. Rev. Lett. 64: 467–470.
245. Weinstein, M.G., C.Y. Song, M. Stavola et al. 1998. Hydrogen-decorated lattice defects in proton implanted GaN. Appl. Phys. Lett. 72: 1703–1705.
246. Wilson, E.B., J.C. Decius, and P.C. Cross. 1980. Molecular Vibrations. New York: Dover.
247. Wolk, J.A., M.B. Kruger, J.N. Heyman, W. Walukiewicz, R. Jeanloz, and E.E. Haller. 1991. Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure. Phys. Rev. Lett. 66: 774–777.
248. Yamada-Kaneta, H., C. Kaneta, and T. Ogawa. 1990.Theory of local-phonon-coupled low-energy anharmonic excitation of the interstitial oxygen in silicon. Phys. Rev. B 42: 9650–9656.
249. –1 hydrogen related line. J. Electron. Mater. 25: 331–335.
250. Zheng, J.-F., and M. Stavola. 1996. Correct assignment of the hydrogen vibrations of the donor-hydrogen complexes in Si: A new example of Fermi resonance. Phys. Rev. Lett. 76: 1154–1157.
251. Bellaiche, L., S.-H. Wei, and A. Zunger. 1996. Localization and percolation in semiconductor alloys: GaAsN vs. GaAsP. Phys. Rev. B 54: 17568–17576.
252. Berggren, K.-F., and B.E. Sernelius. 1981. Band-gap narrowing in heavily doped many-valley semiconductors. Phys. Rev. B 24: 1971–1986.
253. Bishop, S.G. 1986. Iron impurity centers in III-V semiconductors. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 541–626. New York: Gordon and Breach.
254. Burstein, E. 1954. Anomalous optical absorption limit in InSb. Phys. Rev. 93: 632–633.
255. Buyanova, I.A., W.M. Chen, G. Pozina et al. 1999. Mechanism for low-temperature photoluminescence in GaNAs/GaAs structures grown by molecular-beam epitaxy. Appl. Phys. Lett. 75: 501–503.
256. Caldas, M.J., A. Fazzio, and A. Zunger. 1984. A universal trend in the binding energies of deep impurities in semiconductors. Appl. Phys. Lett. 45: 671–673.
257. Chen, X.-B., J. Huso, J.L. Morrison, and L. Bergman. 2006. Dynamics of GaN band edge photoluminescence at near-room-temperature regime. J. Appl. Phys. 99: 046105 (3 pages).
258. Chen, X.-B., J. Huso, J.L. Morrison, and L. Bergman. 2007. The properties of ZnO photoluminescence at and above room temperature. J. Appl. Phys. 102: 116105 (3 pages).
259. Clerjaud, B. 1985. Transition-metal impurities in III-V compounds. J. Phys. C 18: 3615–3661.
260. Dean, P.J. 1986. Oxygen and oxygen associates in gallium phosphide and related semiconductors. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 185–347. New York: Gordon and Breach.
261. Fano, U. 1961. Effects of configuration interaction on intensities and phase shifts. Phys. Rev. 124: 1866–1878.
262. 1−xAs molecular beam epitaxy multiple quantum well structure. Appl. Phys. Lett. 46: 280–282.
263. Gershenzon, M., D.G. Thomas, and R.E. Dietz. 1962. Radiative transitions near the band edge of GaP. In Proc. Intl. Conf. on the Phys. Semicond., ed. A.C. Stickland, pp. 752–759. London: IOP.
264. Hall, R.N. 1952. Electron-hole recombination in germanium. Phys. Rev. 87: 387.
265. Haller, E.E. 1995. Isotopically engineered semiconductors. J. Appl. Phys. 77: 2857–2878.
266. Haynes, J.R. 1960. Experimental proof of the existence of a new electronic complex in silicon. Phys. Rev. Lett. 4: 361–363.
267. Hennel, A.M. 1993. Transition metals in III/V compounds. In Semiconductors and Semimetals Vol. 38, ed. E. Weber, pp. 189–234. San Diego, CA: Academic Press.
268. Hlaing Oo, W.M., M.D. McCluskey, J. Huso, and L. Bergman. 2007. Infrared and Raman spectroscopy of ZnO nanoparticles annealed in hydrogen. J. Appl. Phys. 102: 043529 (5 pages).
269. Huang, K., and A. Rhys. 1950. Theory of light absorption and non-radiative transitions in F-centres. Proc. Roy. Soc. A (London) 204: 406–423.
270. Jackson, J.D. 1999. Classical Electrodynamics, 3rd ed. New York: Wiley.
271. Jain, S.C., M. Willander, J. Narayan, and R. van Overstraeten. 2000. III-nitrides: Growth, characterization, and properties. J. Appl. Phys. 87: 965–1006.
272. Jaros, M. 1977. Wave functions and optical cross sections associated with deep centers in semiconductors. Phys. Rev. B 16: 3694–3706.
273. Karaiskaj, D., M.L.W. Thewalt, T. Ruf et al. 2001. Photoluminescence of isotopically purified silicon: How sharp are the bound exciton transitions? Phys. Rev. Lett. 86: 6010–6013.
274. Karasyuk, V.A., A.G. Steele, A. Mainwood et al. 1992. Ultrahigh-resolution photoluminescence studies of excitons bound to boron in silicon under uniaxial stress. Phys. Rev. B 45: 11736–11743.
275. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. New York: John Wiley & Sons.
276. Lang, D.V., and R.A. Logan. 1977. Large-lattice-relaxation model for persistent photoconductivity in compound semiconductors. Phys. Rev. Lett. 39: 635–639.
277. Lang, D.V. 1986. DX centers in III-V alloys. In Deep Centers in Semiconductors, ed. S.T. Pantelides, pp. 489–539. New York: Gordon and Breach.
278. Lax, M., and E. Burstein. 1955. Infrared lattice absorption in ionic and homopolar crystals. Phys. Rev. 97: 39–52.
279. Ledebo, L.-Å., and B.K. Ridley. 1982. On the position of energy levels related to transition-metal impurities in III-V semiconductors. J. Phys. C 15: L961–L964.
280. 2+ intracenter-induced photoconductivity in InP:Fe. Phys. Rev. B 20: 4160–4166.
281. Madelung, O., U. Rössler, and M. Schulz, eds. 2002. The Landolt-Börnstein Database, Group III, 41: A2a. Berlin: Springer-Verlag.
282. McCluskey, M.D., N.M. Johnson, C.G. Van de Walle, D.P. Bour, M. Kneissl, and W.Walukiewicz. 1998. Metastability of oxygen donors in AlGaN. Phys. Rev. Lett. 80: 4008–4011.
283. Meyer, B.K., H. Alves, D.M. Hofmann et al. 2004. Bound exciton and donor-acceptor pair recombinations in ZnO. Phys. Stat. Solidi B 241: 231–260.
284. Mitra, S.S. 1985. Optical properties of nonmetallic solids. In Handbook of Optical Constants of Solids, ed. E.D. Palik, pp. 263–267. Orlando, FL: Academic Press.
285. Monemar, B. 2001. Bound excitons in GaN. J. Phys.: Condens. Matter 13: 7011–7026.
286. 1-xAs. Phys. Rev. B 37: 8298–8307.
287. Mooney, P. 1990. Deep donor levels (DX centers) in III-V semiconductors. J. Appl. Phys. 67: R1–R26.
288. Mooradian, A., and A.L. McWhorter. 1967. Polarization and intensity of Raman scattering from plasmons and phonons in gallium arsenide. Phys. Rev. Lett. 19: 849–852.
289. Moss, T.S. 1954. The interpretation of the properties of indium antimonide. Proc. Phys. Soc. (London). B76: 775–782.
290. Orton, J.W., and P. Blood. 1990. The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties. London: Academic Press.
291. Özgür, Ü., Y.I. Alivov, C. Liu et al. 2005. A comprehensive review of ZnO materials and devices. J. Appl. Phys. 98: 041301 (103 pages).
292. Pajot, B., and B. Clerjaud. 2012. Optical Properties of Impurities and Defects in Semiconductors II: Electronic Absorption of Deep Centres and Vibrational Spectra. Berlin: Springer-Verlag.
293. Pankove, J.I. 1971. Optical Processes in Semiconductors. New York: Dover.
294. Perlin, P., T. Suski, H. Teisseyre et al. 1995. Toward the identification of the dominant donor in GaN. Phys. Rev. Lett. 75: 296–299.
295. Saito, M., A. Oshiyama, and O. Sugino. 1992. Validity of the broken-bond model for the DX center in GaAs. Phys. Rev. B 45: 13745–13748.
296. Sakurai, J.J. Modern Quantum Mechanics, 337. Reading, MA: Addison-Wesley.
297. Schubert, E.F. 2006. Light-Emitting Diodes, 2nd ed. Cambridge: Cambridge University Press.
298. Shan, W., X.C. Xie, J.J. Song, and B. Goldenberg. 1995. Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 67: 2512–2514.
299. Shan, W., W. Walukiewicz, J.W. Ager III et al. 1999. Band anticrossing in GaInNAs alloys. Phys. Rev. Lett. 82: 1221–1224.
300. Shockley, W., and W.T. Read. 1952. Statistics of the recombinations of holes and electrons. Phys. Rev. 87: 835–842.
301. Spitzer, W.G. 1967. Multiphonon lattice absorption. In Semiconductors and Semimetals Vol. 3, eds. R.K. Willardson and A.C. Beer, pp. 17–69. New York: Academic Press.
302. Sturge, M.D. 1962. Optical absorption of gallium arsenide between 0.6 and 2.75 eV. Phys. Rev. 121: 359–362.
303. Sze, S.M., and K.K. Ng. 2007. Physics of Semiconductor Devices, 3rd ed., pp. 40–45. New York: John Wiley & Sons.
304. 28Si. J. Appl. Phys. 101: 081724 (5 pages).
305. Thomas, D.G., M. Gershenzon, and F.A. Trumbore. 1964. Pair spectra and “edge” emission in gallium phosphide. Phys. Rev. 133: A269–A279.
306. Thomas, D.G., J.J. Hopfield, and W.N. Augustyniak. 1965. Kinetics of radiative recombination of randomly distributed donors and acceptors. Phys. Rev. 140: A202–A220.
307. Thomas, D.G., and J.J. Hopfield. 1966. Isoelectronic traps due to nitrogen in GaP. Phys. Rev. 150: 680–703.
308. Urbach, F. 1953. The long-wavelength edge of photographic sensitivity and of the electronic absorption of solids. Phys. Rev. 92: 1324.
309. Varshni, Y.P. 1967. Band-to-band radiative recombination in groups IV, VI, and III-V semiconductors. Phys. Stat. Sol. (b) 19: 459–514 and 20: 9–36.
310. Vurgaftman, I., and J.R. Meyer. 2003. Band parameters for nitrogen-containing semiconductors. J. Appl. Phys. 94: 3675–3696.
311. Wetzel, C., W. Walukiewicz, E.E. Haller et al. 1996. Carrier localization of as-grown n-type gallium nitride under large hydrostatic pressure. Phys. Rev. B 53: 1322–1326.
312. Williams, F. 1968. Donor-acceptor pairs in semiconductors. Phys. Stat. Solid. 25: 493–512.
313. Wolfe, J.P., W.L. Hansen, E.E. Haller, R.S. Markiewicz, C. Kittel, and C.D. Jeffries. 1975. Photograph of an electron-hole drop in germanium. Phys. Rev. Lett. 34: 1292–1293.
314. Wolfe, J.P., and C.D. Jeffries. 1983. Strain-confined excitons and electron-hole liquid. In Electron-Hole Droplets in Semiconductors, eds. C.D. Jeffries and L.V. Keldysh. Amsterdam: North-Holland.
315. Wolk, J.A., M.B. Kruger, J.N. Heyman, W. Walukiewicz, R. Jeanloz, and E.E. Haller. 1991. Local-vibrational-mode spectroscopy of DX centers in Si-doped GaAs under hydrostatic pressure. Phys. Rev. Lett. 66: 774–777.
316. Woodhouse, K., R.C. Newman, T.J. de Lyon, J.M. Woodall, G.J. Scilla, and F. Cardone. 1991. LVM spectroscopy of carbon and carbon-hydrogen pairs in GaAs grown by MOMBE. Semicond. Sci. Technol. 6: 330–334.
317. Wu, J., W. Walukiewicz, W. Shan et al. 2002. Effects of the narrow band gap on the properties of InN. Phys. Rev. B 66: 201403 (4 pages).
318. Wu, J., W. Walukiewicz, W. Shan et al. 2003. Temperature dependence of the fundamental band gap of InN. J. Appl. Phys. 94: 4457–4460.
319. Yu, P.Y., and M. Cardona. 1996. Fundamentals of Semiconductors. Berlin: Springer-Verlag.
320. Bracht, H., N.A. Stolwijk, and H. Mehrer. 1991. Diffusion of copper, silver, and gold in germanium. Phys. Rev. B 43: 14465–14477.
321. Bracht, H., N.A. Stolwijk, and H. Mehrer. 1995. Properties of intrinsic point defects in silicon determined by zinc diffusion experiments under nonequilibrium conditions. Phys. Rev. B 52: 16542–16560.
322. Bracht, H., and E.E. Haller. 1998. Silicon self-diffusion in isotope heterostructures. Phys. Rev. Lett. 81: 393–396.
323. Bracht, H., M.S. Norseng, E.E. Haller, and K. Eberl. 2001. Zinc diffusion enhanced Ga diffusion in GaAs isotope heterostructures. Physica B 308–310: 831–834.
324. Bracht, H. 2006. Diffusion mediated by doping and radiation-induced point defects. Physica B 376–377: 11–18.
325. Bracht, H., H.H. Silvestri, I.D. Sharp, and E.E. Haller. 2007. Self-and foreign-atom diffusion in semiconductor isotope heterostructures. II. Experimental results for silicon. Phys. Rev. B 75: 035211 (21 pages).
326. Chang, L., and A. Koma. 1977. Interdiffusion between GaAs and A1As. Appl. Phys. Lett. 29: 138–141.
327. Chroneos, A., H. Bracht, R.W. Grimes, and B.P. Uberuaga. 2008. Vacancy-mediated dopant diffusion activation enthalpies for germanium. Appl. Phys. Lett. 92: 172103 (3 pages).
328. Compaan, K., and Y. Haven. 1955. Correlation factors for diffusion in solids. Trans. Faraday Soc. 52: 786–801.
329. Crank, J. 1975. The Mathematics of Diffusion. Oxford: Clarendon Press.
330. Dorner, P., W. Gust, A. Lodding, H. Odelius, B. Predel, and U. Roll. 1982a. SIMS-Untersuchungen zure Volumendiffusion von Al in Ge. Acta metall. 30: 941–946.
331. Dorner, P., W. Gust, A. Lodding, et al. 1982b. SIMS investigations on the diffusion of In in Ge single-crystals. Zeitschrift fur Metallkunde 73: 325–330.
332. Dunlap, W.C., Jr. 1954. Diffusion of impurities in germanium. Phys. Rev. 94: 1531–1540.
333. Eaglesham, D.J., P.A. Stolk, H.-J. Gossmann, and J.M. Poate. 1994. Implantation and transient B diffusion in Si: The source of the interstitials. Appl. Phys. Lett. 65: 2305–2307.
334. Fahey, P.M., P.B. Griffin, and J.D. Plummer. 1989. Point-defects and dopant diffusion in silicon. Rev. Mod. Phys. 61: 289–384.
335. Frank, F.C., and D. Turnbull. 1956. Mechanism of diffusion of copper in germanium. Phys Rev. 104: 617–618.
336. Frank, W., U. Gösele, H. Mehrer, and A. Seeger. 1984. Diffusion in silicon and germanium. In Diffusion in Crystalline Solids, eds. G.E. Murch and A.S. Nowick, pp. 63–142. Orlando, FL: Academic Press.
337. Fuller, C.S., and J.A. Ditzenberger. 1953. Diffusion of lithium into germanium and silicon. Phys. Rev. 91: 193.
338. Ghez, R. 2001. Diffusion Phenomena: Cases and Studies. New York: Kluwer Academic.
339. Goldstein, B. 1960. Diffusion in compound semiconductors. Phys. Rev. 121: 1305–1311.
340. Gösele, U., W. Frank, and A. Seeger. 1980. Mechanisms and kinetics of the diffusion of gold in silicon. Appl. Phys. 23: 361–368.
341. Gösele, U., and T.Y. Tan. 1985.The influence of point defects on diffusion and gettering in silicon. Mater. Res. Soc. Symp. Proc. 36: 105–116.
342. Gösele, U. 2000. Surprising movements in solids. Nature 408: 38–39.
343. Haller, E.E., W. Hansen, and F.S. Goulding. 1981. Physics of ultra-pure germanium. Adv. Phys. 30: 93–138.
344. Herring, C., and N.M. Johnson. 1991. Hydrogen migration and solubility in silicon. In Semiconductors and Semimetals Vol. 34, ed. J.I. Pankove and N.M. Johnson, pp. 225–350. San Diego: Academic Press.
345. Hofstetter, D., B. Maisenhölder, and H.P. Zappe. 1998. Quantum-well intermixing for fabrication of lasers and photonic integrated circuits. IEEE J. Sel. Topics Quantum Electron. 4: 794–802.
346. Janotti, A., and C.G. Van de Walle. 2007. Native point defects in ZnO. Phys. Rev. B 76: 165202: 1–22.
347. Johnson, N.M. 1985. Mechanism for hydrogen compensation of shallow-acceptor impurities in single-crystal silicon. Phys. Rev. B 31: 5525–5528.
348. Johnson, N.M., and C.G. Van de Walle. 1999. Isolated monatomic hydrogen in silicon. In Semiconductors and Semimetals Vol. 61, ed. N.H. Nickel, pp. 113–137. San Diego, CA: Academic Press.
349. Kawabe, M., N. Shimizu, F. Hasegawa, and Y. Nannichi. 1985. Effects of Be and Si on disordering of the AlAs/GaAs superlattice. Appl. Phys. Lett. 46: 849–850.
350. Kizilyalli, I.C., T.L. Rich, F.A. Stevie, and C.S. Rafferty. 1996. Diffusion parameters of indium for silicon process modeling. J. Appl. Phys. 80: 4944–4947.
351. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. New York: John Wiley & Sons.
352. Laidig, W.D., N. Holonyak, Jr., M.D. Camras et al. 1981. Disorder of an AlAs-GaAs superlattice by impurity diffusion. Appl. Phys. Lett. 38: 776–8.
353. Li, S.X., K.M. Yu, J. Wu et al. 2005. Fermi-level stabilization energy in group-III nitrides. Phys. Rev. B 71: 161201 (4 pages).
354. McCluskey, M.D., L.T. Romano, B.S. Krusor, N.M. Johnson, T. Suski, and J. Jun. 1998. Interdiffusion of In and Ga in InGaN quantum wells. Appl. Phys. Lett. 73: 1281–1283.
355. 2 thermal nitridation on impurity diffusion and oxidation induced stacking fault size in Si. J. Appl. Phys. 54: 3860–3866.
356. Palfrey, H.D., M. Brown, and A.F.W. Willoughby. 1981. Self-diffusion of gallium in gallium arsenide. J. Electrochem. Soc. 128: 2224–2228.
357. Pauling, L. 1988. General Chemistry. New York: Dover.
358. Reif, F. 1965. Fundamentals of Statistical and Thermal Physics. New York: McGraw-Hill.
359. Runyan, W.R. 1965. Silicon Semiconductor Technology. New York: McGraw-Hill.
360. Seeger, A., and K.P. Chik. 1968. Diffusion mechanisms and point defects and silicon and germanium. Phys. Stat. Solidi 29: 455–542.
361. Shaw, D. 1973. Atomic Diffusion in Semiconductors. London: Plenum Press.
362. Smith, R.C.T. 1953. Conduction of heat in the semi-infinite solid with a short table of an important integral. Australian J. Phys. 6: 127–130.
363. Södervall, U., H. Odelius, A. Lodding et al. 1986. Gallium tracer diffusion and its isotope effect in germanium. Philisophical Mag. A 54: 539–551.
364. 2/Si interface. J. Appl. Phys. 104: 023518 (11 pages).
365. Stolk, P.A., H.-J. Gossmann, D.J. Eaglesham, and J.M. Poate. 1996. The effect of carbon on diffusion in silicon. Mat. Sci. Eng. B 36: 275–281.
366. Tan, T.Y., and U. Gösele. 1985. Point defects, diffusion processes, and swirl defect formation in silicon. Appl. Phys. A 37: 1–17.
367. 71GaAs isotope superlattice structures. J. Appl. Phys. 72: 5206–5212.
368. Tuck, B. 1988. Atomic Diffusion in III-V Semiconductors. Bristol: Adam Hilger.
369. Uematsu, M. 1997. Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism. J. Appl. Phys. 82: 2228–2246.
370. Van de Walle, C.G., and J. Neugebauer. 2004. First-principles calculations for defects and impurities: Applications to III-nitrides. J. Appl. Phys. 95: 3851–3879.
371. Van Wieringen, A., and N. Warmholtz. 1956. On the permeation of hydrogen and helium in single crystal silicon and germanium at elevated temperatures. Physica 22: 849–865.
372. Vogel, G., G. Hettich, and H. Mehrer. 1983. Self-diffusion in intrinsic germanium and effects of doping on self-diffusion in germanium. J. Phys. C 16: 6197–6204.
373. Walukiewicz, W. 1989. Amphoteric native defects in semiconductors. Appl. Phys. Lett. 54: 2094–2096.
374. Walukiewicz, W. 2001. Intrinsic limitations to the doping of wide-gap semiconductors. Physica B 302–303: 123–134.
375. Wang, L., L. Hsu, E.E. Haller et al. 1996. Ga self-diffusion in GaAs isotope heterostructures. Phys. Rev. Lett. 76: 2342–2345.
376. Wang, L., J.A. Wolk, L. Hsu et al. 1997. Gallium self-diffusion in gallium phosphide. Appl. Phys. Lett. 70: 1831–1833.
377. Zhang, S.B., and J.E. Northrup. 1991. Chemical potential dependence on defect formation energies in GaAs: Application to Ga self-diffusion. Phys. Rev. Lett. 67: 2339–2342.
378. Ager III, J.W., N. Miller, R.E. Jones et al. 2008. Mg-doped InN and InGaN—Photoluminescence, capacitance-voltage and thermopower measurements. Phys. Stat. Sol. B 245: 873–877.
379. Auret, F.D. 1986. Considerations for capacitance DLTS measurements using a lock-in amplifier. Rev. Sci. Instrum. 57: 1597–1613.
380. Beer, A.C. 1990. Hall effect and the beauty and challenges of science. In The Hall Effect and Its Applications, eds. C.L. Chien and C.R. Westgate, pp. 299–338. New York: Plenum Press.
381. Bierwagen, O., T. Ive, C.G. Van de Walle, and J.S. Speck. 2008. Causes of incorrect carrier-type identification in van der Pauw–Hall measurements. Appl. Phys. Lett. 93: 242108 (3 pages).
382. Blood, P. 1986. Capacitance-voltage profiling and the characterization of III-V semiconductors using electrolyte barriers. Semicond. Sci. Technol. 1: 7–27.
383. Bullis, W. Murray, ed. 1977. Semiconductor measurement technology. NBS Special Publication 400-29: 64–65.
384. Dobaczewski, L., A.R. Peaker, and K. Bonde Nielsen. 2004. Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors. J. Appl. Phys. 96: 4689–4728.
385. Götz, W., and N.M. Johnson. 1999. Characterization of dopants and deep level defects in gallium nitride. In Semiconductors and Semimetals Vol. 57, eds. J. Pankove and T. Moustakas, pp. 185–207. New York: Academic Press.
386. Haller, E.E., P.P. Li, G.S. Hubbard, and W.L. Hansen. 1979. Deep level transient spectroscopy of high-purity germanium diodes/detectors. IEEE Trans. Nucl. Sci. NS-26: 265–270.
387. Haynes, J.R., and W. Shockley. 1951. The mobility and life of injected holes and electrons in germanium. Phys. Rev. 81: 835–843.
388. Kane, P.F., and G.B. Larrabee. 1970. Characterization of Semiconductor Materials. New York: McGraw-Hill.
389. Kittel, C. 2005. Introduction to Solid State Physics, 8th ed. New York: John Wiley & Sons.
390. Lang, D.V. 1974. Deep-level transient spectroscopy: A new method to characterize traps in semiconductors. J. Appl. Phys. 45: 3023–3032.
391. McCluskey, M.D., N.M. Johnson, C.G. Van de Walle, D.P. Bour, M. Kneissl, and W.Walukiewicz. 1998. Metastability of oxygen donors in AlGaN. Phys. Rev. Lett. 80: 4008–4011.
392. McCluskey, M.D., and S.J. Jokela. 2009. Defects in ZnO. J. Appl. Phys. 106: 071101:1–13
393. McKelvey, J.P. 1966. Solid State and Semiconductor Physics, Chapter 10. New York: Harper and Row.
394. Miller, G.L. 1972. A feedback method for investigating carrier distributions in semiconductors. IEEE Trans. Elec. Dev. ED-19: 1103–1108.
395. Miller, G.L., J.V. Ramirez, and D.A.H. Robinson. 1975. A correlation method for semiconductor transient signal measurements. J. Appl. Phys. 46: 2638–2644.
396. Miller, G.L., D.A.H. Robinson, and J.D. Wiley. 1976. Contactless measurement of semiconductor conductivity by radio frequency–free carrier power absorption. Rev. Sci. Instrum. 47: 799–805.
397. Miller, G.L., D.V. Lang, and L.C. Kimerling. 1977. Capacitance transient spectroscopy. Ann. Rev. Mater. Sci. 7: 377–448.
398. Miller, G.L., D.A.H. Robinson, and S.D. Ferris. 1978. In Semiconductor Characterization Techniques, Electrochemical Society Proceedings Vol. 78-3, eds. P.A. Barnes and G.A. Rozgonyi, p. 22. Pennington, NJ: Electrochemical Society.
399. Miller, N., J.W. Ager III, H.M. Smith III et al. 2010. Hole transport and photoluminescence in Mg-doped InN. J. Appl. Phys. 107: 113712 (8 pages).
400. Milnes, A.G. 1973. Deep Impurities in Semiconductors, Chapter 9. New York: John Wiley & Sons.
401. Mooney, P.M. 1983. Photo-deep level transient spectroscopy: A technique to study deep levels in heavily compensated semiconductors. J. Appl. Phys. 54: 208–213.
402. Mooney, P.M. 1990. Deep donor levels (DX centers) in III-V semiconductors. J. Appl. Phys. 67: R1–R26.
403. Nolte, D.D., and E.E. Haller. 1987. Optimization of the energy resolution of deep level transient spectroscopy. J. Appl. Phys. 62: 900–906.
404. Queisser, H.-J., and E.E. Haller. 1998. Defects in semiconductors: Some fatal, some vital. Science 281: 945–950.
405. Ruge, I. 1975. Halbleiter Technologie. Berlin: Springer-Verlag.
406. Sah, C.T., L. Forbes, L.L. Rosier, and A.F. Tasch, Jr. 1970. Thermal and optical emission and capture rates and cross sections of electrons and holes at imperfect centers in semiconductors from photo and dark junction current and capacitance experiments. Solid State Electron. 13: 759–788.
407. Šantić, B., and U.V. Desnica. 1990.Thermoelectric effect spectroscopy of deep levels—application to semi-insulating GaAs. Appl. Phys. Lett. 56: 2636–2638.
408. Schroder, D.K. 1997. Carrier lifetimes in silicon. IEEE Trans. Electron. Devices 44: 160–170.
409. Schroder, D.K. 2006. Semiconductor Material and Device Characterization, 3rd ed. New York: John Wiley & Sons.
410. Seeger, K. 1982. Semiconductor Physics: An Introduction. Berlin: Springer-Verlag.
411. Smits, F.M. 1958. Measurement of sheet resisitivities with the four-point probe. Bell Syst. Tech. J. 37: 711–718.
412. Stavola, M., ed. 1998. Semiconductors and Semimetals. Vols. 51A and 51B. San Diego: Academic Press.
413. Sze, S.M., and J.C. Irvin. 1968. Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°K. Solid State Electron. 11: 599–602.
414. Van der Pauw, L.J. 1958. A method of measuring specific resistivity and Hall effect of discs of arbitrary shape. Philips Res. Rep. 13: 1–9.
415. Wieder, H.H. 1979. Four-terminal nondestructive electrical and galvanomagnetic measurements. In Nondestructive Evaluation of Semiconductor Materials and Devices, pp. 68–105, ed. J.N. Zemel. New York: Plenum Press.
416. Ahrenkiel, R.K. 1993. Minority-carrier lifetime in III-V semiconductors. In Semiconductors and Semimetals Vol. 39, eds. R.K. Ahrenkiel and M.S. Lundstrom, pp. 40–150. San Diego: Academic Press.
417. Beaulac, R., S.T. Ochsenbein, and D.R. Gamelin. 2010. Colloidal transition-metal-doped quantum dots. In Nanocrystal Quantum Dots, 2nd ed, ed. V.I. Klimov, Chapter 11. Boca Raton, FL: CRC Press.
418. Bell, R.J. 1972. Introductory Fourier Transform Spectroscopy. New York: Academic Press.
419. Bourgoin, J., and M. Lannoo. 1983. Point Defects in Semiconductors II. Berlin: Springer-Verlag.
420. Budde, M., G. Lüpke, C. Parks Cheney, N.H. Tolk, and L.C. Feldman. 2000. Vibrational lifetime of bond-center hydrogen in crystalline silicon. Phys. Rev. Lett. 85: 1452–1455.
421. Cardona, M. 1982. Resonance phenomena. In Light Scattering in Solids II, eds. M. Cardona and G. Guntherodt, 19–98. Berlin: Springer.
422. Cardona, M., and M.L.W.Thewalt. 2005. Isotope effects on the optical spectra of semiconductors. Rev. Mod. Phys. 77: 1173–1224.
423. Carlos, W.E., E.R. Glaser, and D.C. Look. 2001. Magnetic resonance studies of ZnO. Physica B 308–10: 976–979.
424. Cheng, Y.M., and M. Stavola. 1994. Non-Arrhenius reorientation kinetics for the B-H complex in Si: Evidence for thermally assisted tunneling. Phys. Rev. Lett. 73: 3419–3422.
425. Colson, W.B., E.D. Johnson, M.J. Kelley, and H.A. Schwettman. 2002. Putting free-electron lasers to work. Physics Today 55(1): 35–41.
426. Cooley, J.W., and J.W. Tukey. 1965. An algorithm for the machine calculation of complex Fourier series. Math. Computat. 19: 297–301.
427. 1 ground-state transformation. Phys. Rev. Lett. 72: 2231–2234.
428. Evans, S.M., N.C. Giles, L.E. Halliburton, and L.A. Kappers. 2008. Further characterization of oxygen vacancies and zinc vacancies in electron-irradiated ZnO. J. Appl. Phys. 103: 043710 (7 pages).
429. Feher, G. 1956. Observation of nuclear magnetic resonances via the electron spin resonance line. Phys. Rev. 103: 834–835.
430. Fellgett, P. 1958. I.—Les principes généraux des méthodes nouvelles en spectroscopie interféren-tielle—A propos de la théorie du spectromètre interférentiel multiplex. J. Phys. Radium 19: 187–191.
431. Girard, A., and P. Jacquinot. 1967. Principles of instrumental methods in spectroscopy. In Advanced Optical Techniques, ed. A.C.S. Van Hell, pp. 71–121. Amsterdam: North-Holland.
432. Griffiths, P.R., and J.A. de Haseth. 1986. Fourier Transform Infrared Spectrometry. New York: John Wiley & Sons.
433. Grivickas, P., M.D. McCluskey, and Y.M. Gupta. 2008. Band-gap luminescence of GaP:S shock compressed to 5 GPa. Appl. Phys. Lett. 92: 142104 (3 pages).
434. Grivickas, P., M.D. McCluskey, Y. Zhang, J. F. Geisz, and Y.M. Gupta. 2009. Bound exciton luminescence in shock compressed GaP:S and GaP:N. J. Appl. Phys. 106: 023710 (7 pages).
435. Haller, E.E., and L. M. Falicov. 1979. High-resolution EPR and piezospectroscopy studies of the lithium-oxygen donor in germanium. Proc. 14th Intl. Conf. Phys. Semicond., Inst. Phys. Conf. Ser. No. 43, ed. B.H.L. Wilson, pp. 1039–1042.
436. Haller, E.E, W.L. Hansen, and F.S. Goulding. 1981. Physics of ultra-pure germanium. Adv. Phys. 30: 93–138.
437. Haller, E.E. 1995. Isotopically engineered semiconductors. J. Appl. Phys. 77: 2857–2878.
438. Hecht, E. 2002. Optics, 4th ed. Reading, MA: Addison-Wesley.
439. 18O under pressure. Phys. Rev. Lett. 90: 095505 (4 pages).
440. Jayaraman, A. 1983. Diamond-anvil cell and high-pressure physical investigations. Rev. Mod. Phys. 55: 65–107.
441. Karaiskaj, D., M.L.W. Thewalt, T. Ruf et al. 2001. Photoluminescence of isotopically purified silicon: How sharp are the bound exciton transitions? Phys. Rev. Lett. 86: 6010–6013.
442. Kennedy, T.A., and E.R. Glaser. 1998. Magnetic resonance of epitaxial layers detected by photoluminescence. In Semiconductors and Semimetals Vol. 51A, ed. M. Stavola, pp. 93–136. San Diego, CA: Academic Press.
443. Lüpke, G., X. Zhang, B. Sun, A. Fraser, N.H.Tolk, and L.C. Feldman. 2002. Structure-dependent vibrational lifetimes of hydrogen in silicon. Phys. Rev. Lett. 88: 135501 (4 pages).
444. Lüpke, G., N.H. Tolk, and L.C. Feldman. 2003. Vibrational lifetimes of hydrogen in silicon. J. Appl. Phys. 93: 2317–2336.
445. Lyons, J.L., A. Janotti, and C.G. Van de Walle. 2009. Why nitrogen cannot lead to p-type conductivity in ZnO. Appl. Phys. Lett. 95: 252105 (3 pages).
446. McCluskey, M.D., L.T. Romano, B.S. Krusor, D.P. Bour, N.M. Johnson, and S. Brennan. 1998. Phase separation in InGaN/GaN multiple quantum wells. Appl. Phys. Lett. 72: 1730–1732.
447. Neugebauer, G., H.J. Habing, R. Vanduinen et al. 1984. The infrared astronomy satellite (IRAS) mission. Astrophys. J. 278: L1–L6.
448. Nurmikko, A.V. 1992. Transient spectroscopy by ultrashort laser pulse techniques. In Semiconductors and Semimetals Vol. 36, eds. D.G. Seiler and C.L. Littler, pp. 85–135. San Diego, CA: Academic Press.
449. O’Connor, D.V., and D. Phillips. 1984. Time-Correlated Single Photon Counting. London: Academic Press.
450. Pankove, J.I. 1971. Optical Processes in Semiconductors. New York: Dover.
451. Peng, H.Y., M.D. McCluskey, Y.M. Gupta, M. Kneissl, and N.M. Johnson. 2005. Shock-induced band-gap shift in GaN: Anisotropy of the deformation potentials. Phys. Rev. B 71: 115207 (5 pages).
452. Perkowitz, S. 1993. Optical Characterization of Semiconductors. New York: Academic Press.
453. Ramdas, A.K., and S. Rodriguez. 1992. Piezospectroscopy of semiconductors. In Semiconductors and Semimetals Vol. 36, eds. D.G. Seiler and C.L. Littler, pp. 137–220. San Diego: Academic Press.
454. Rieke, G., E.T. Young, A. Alonso-Herrero et al. 2003. Far infrared photoconductors for spaceborne astronomy: A review based on the MIPS 70 micron array. Proceedings of the Far-IR, Sub-MM and MM Detector Technology Workshop, eds. J. Wolf, J. Farhoomand, and C.R. McCreight, NASA/CP-211408, paper 2-01, pp. 47–53.
455. Schubert, E.F. 2006. Light-Emitting Diodes. Cambridge: Cambridge University Press.
456. Shan, W., X.C. Xie, J.J. Song, and B. Goldenberg. 1995. Time-resolved exciton luminescence in GaN grown by metalorganic chemical vapor deposition. Appl. Phys. Lett. 67: 2512–2514.
457. Spaeth, J.-M., J.R. Niklas, and R.H. Bartram. 1992. Structural Analysis of Point Defects in Solids. Berlin: Springer-Verlag.
458. Stavola, M., K. Bergman, S.J. Pearton, and J. Lopata. 1988. Hydrogen motion in defect complexes: Reorientation kinetics of the B-H complex in silicon. Phys. Rev. Lett. 61: 2786–2789.
459. 28Si. J. Appl. Phys. 110: 081301 (25 pages).
460. Tang, C.L., and L.K. Cheng. 1995. Fundamentals of Optical Parametric Processes and Oscillators. Amsterdam: Harwood Academic.
461. Tarun, M.C., M. Zafar Iqbal, and M.D. McCluskey. 2011. Nitrogen is a deep acceptor in ZnO. AIP Advances 1: 022105 (7 pages).
462. 28Si reveal new things about old defects? Physica B 401–2: 587–592.
463. Thomas, D.G., M. Gershenzon, and F.A. Trumbore. 1964. Pair spectra and “edge” emission in gallium phosphide. Phys. Rev. 133: A269–A279.
464. Van Gisbergen, S.J.C.H.M., A.A. Ezhevskii, N.T. Son, T. Gregorkiewicz, and C.A.J. Ammerlaan. 1994. Ligand ENDOR on substitutional manganese in GaAs. Phys. Rev. B 49: 10999–11004.
465. Watkins, G.D. 1963. An EPR study of the lattice vacancy in silicon. J. Phys. Soc. Jpn. 18, Suppl. 2: 22–27.
466. Watkins, G.D. 1998. EPR and ENDOR studies of defects in semiconductors. In Semiconductors and Semimetals Vol. 51A, ed. M. Stavola, pp. 1–43. San Diego, CA: Academic Press.
467. Watkins, G.D., and J.R. Troxell. 1980. Negative-U properties for point defects in silicon. Phys. Rev. Lett. 44: 593–596.
468. Wertz, J.E., and J.R. Bolton. 1986. Electron Spin Resonance. New York: Chapman and Hall.
469. Wolk, J.A., J.W. Ager III, K.J. Duxstad et al. 1993. Local vibrational mode spectroscopy of nitrogen-hydrogen complex in ZnSe. Appl. Phys. Lett. 63: 2756–2758.
470. Yu, P.Y., and M. Cardona. 1996. Fundamentals of Semiconductors. Berlin: Springer-Verlag.
471. Agarwal, B.K. 1991. X-ray Spectroscopy: An Introduction. Berlin: Springer-Verlag.
472. Benninghoven, A. 1976. Surface analysis by means of ion beams. Crit. Rev. Solid State Sci. 6: 291–316.
473. Bohr, N. 1915. On the decrease of velocity of swiftly moving electrified particles in passing through matter. Phil. Mag. (Series 6) 30: 581–612.
474. Bragg, W.H., and R. Kleeman. 1905. On the α particles of radium, and their loss of range in passing through various atoms and molecules. Phil. Mag. (Series 6) 10: 318–340.
475. Carlson, T.A. 1975. Photoelectron and Auger Spectroscopy. New York: Plenum Press.
476. Carter, G., and W.A. Grant. 1976. Ion Implantation of Semiconductors. New York: John Wiley & Sons.
477. Chow, K.H., B. Hitti, and R.F. Kiefl. 1998. μSR on muonium in semiconductors and its relation to hydrogen. In Semiconductors and Semimetals Vol. 51A, ed. M. Stavola, pp. 137–207. San Diego, CA: Academic Press.
478. Chu, W.-K., J.W. Mayer, and M.-A. Nicolet. 1978. Backscattering Spectrometry. New York: Academic Press.
479. Corbett, J.W., and G.D. Watkins. 1965. Production of divacancies and vacancies by electron irradiation of silicon. Phys. Rev. 138: A555–A560.
480. Cox, S.F.J., E.A. Davis, S.P. Cottrell et al. 2001. Experimental confirmation of the predicted shallow donor hydrogen state in zinc oxide. Phys. Rev. Lett. 86: 2601–2604.
481. Davis, E.A., S.F.J. Cox, R.L. Lichti, and C.G. Van de Walle. 2003. Shallow donor state of hydrogen in indium nitride. Appl. Phys. Lett. 82: 592–594.
482. 32P channeled into silicon crystals. Can. J. Phys. 46: 587–595.
483. Eisberg, R., and R. Resnick. 1985. Quantum Physics of Atoms, Molecules, Solids, Nuclei, and Particles. New York: John Wiley & Sons.
484. Feldman, L.C., J.W. Mayer, and S.J. Picreaux. 1982. Materials Analysis by Ion Channeling. New York: Academic Press.
485. Feldman, L.C., and J.W. Mayer. 1986. Fundamentals of Surface and Thin Film Analysis. New York: North-Holland.
486. Fons, P., H. Tampo, A.V. Kolobov et al. 2006. Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO. Phys. Rev. Lett. 96: 045504 (4 pages).
487. Gemmel, D.S. 1974. Channeling and related effects in the motion of charged particles through crystals. Rev. Mod. Phys. 46: 129–227.
488. Goldstein, J.I., D.E. Newbury, P. Echlin et al. 1992. Scanning Electron Microscopy and X-ray Microanalysis, 2nd ed., p. 82. New York: Plenum Press.
489. Hiraki, A., M.-A. Nicolet, and J.W. Mayer. 1971. Low-temperature migration of silicon in thin layers of gold and platinum. Appl. Phys. Lett. 18: 178–181.
490. Hlaing Oo, W.M., M.D. McCluskey, J. Huso et al. 2010. Incorporation of Cu acceptors in ZnO nanocrystals. J. Appl. Phys. 108: 064301 (3 pages).
491. Ho, P.S., and J.E. Lewis. 1976. Deconvolution method for composition profiling by Auger sputtering technique. Surface Science 55: 335–348.
492. Keeble, D.J., M.T. Umlor, P. Asokakumar, K.G. Lynn, and P.W. Cooke. 1993. Annealing of low-temperature GaAs studied using a variable-energy positron beam. Appl. Phys. Lett. 63: 87–89.
493. Koningsberger, D.C., and R. Prins, eds. 1988. X-ray Absorption: Principles, Applications, Techniques of EXAFS, SEXAFS and XANES. New York: John Wiley & Sons.
494. Leamy, H.J. 1982. Charge collection scanning electron microcopy. J. Appl. Phys. 53: R51–R80.
495. Lichti, R.L., H.N. Bani-Salameh, B.R. Carroll, K.H. Chow, B. Hitti, and S.R. Kreitzman. 2007. Donor and acceptor energies for muonium in GaAs. Phys. Rev. B 76: 045221 (5 pages).
496. Lindhard, J., M. Scharff, and H.E. Schiøtt. 1963. Range concepts and heavy ion ranges. Mat. Fys. Medd. Dan. Vid. Selsk. 33(14): 1–42.
497. Mayer, J.W., L. Eriksson, and J.A. Davies. 1970. Ion Implantation in Semiconductors. New York: Academic Press.
498. McCluskey, M.D., L.T. Romano, B.S. Krusor, N.M. Johnson, T. Suski, and J. Jun. 1998. Interdiffusion of In and Ga in InGaN quantum wells. Appl. Phys. Lett. 73: 1281–1283.
499. Moll, A.J., K.M. Yu, W. Walukiewicz, W.L. Hansen, and E.E. Haller. 1992. Coimplantation and electrical activity of C in GaAs: Stoichiometry and damage effects. Appl. Phys. Lett. 60: 2383–2385.
500. Muilenberg, G.E., ed. 1979. Handbook of X-ray Photoelectron Spectroscopy. Eden Prairie, MN: Perkin-Elmer.
501. Nicolet, M.-A. 1979. Backscattering spectrometry and related analytic techniques. In Nondestructive Evaluation of Semiconductor Materials and Devices, ed. J.N. Zemel, pp. 581– 630. New York: Plenum Press.
502. Ridgway, M.C., C.J. Glover, K.M. Yu et al. 2000. Ion-dose-dependent microstructure in amorphous Ge. Phys. Rev. B 61: 12586–12589.
503. Runyan, W.R., and T.J. Shaffner. 1998. Semiconductor Measurements and Instrumentation. New York: McGraw-Hill.
504. Saarinen, K., P. Hautojärvi, and C. Corbel. 1998. Positron annihilation spectroscopy of defects in semiconductors. In Semiconductors and Semimetals Vol. 51A, ed. M. Stavola, pp. 209–285. San Diego, CA: Academic Press.
505. Schatz, G., and A. Weidinger. 1996. Nuclear Condensed Matter Physics: Nuclear Methods and Applications. New York: John Wiley & Sons.
506. Schroder, D.K. 2006. Semiconductor Material and Device Characterization, 3rd ed. New York: John Wiley & Sons.
507. Schultz, P.J., and K.G. Lynn. 1988. Interaction of positron beams with surfaces, thin films, and interfaces. Rev. Mod. Phys. 60: 701–779.
508. Selim, F.A., M.H. Weber, D. Solodovnikov, and K.G. Lynn. 2007. Nature of native defects in ZnO. Phys. Rev. Lett. 99: 085502 (4 pages).
509. Skudlik, H., M. Deicher, R. Keller et al. 1992. H passivation of shallow acceptors in Si studied by use of the perturbed-γγ-angular-correlation technique. Phys. Rev. B 46: 2172–2182.
510. Teo, B.K. 1986. EXAFS: Basic Principles and Data Analysis. Berlin: Springer-Verlag.
511. Tuomisto, F., V. Ranki, K. Saarinen, and D.C. Look. 2003. Evidence of the Zn vacancy acting as the dominant acceptor in n-type ZnO. Phys. Rev. Lett. 91: 205502 (4 pages).
512. Wang, L., L. Hsu, E.E. Haller et al. 1996. Ga self-diffusion in GaAs isotope heterostructures. Phys. Rev. Lett. 76: 2342–2345.
513. Wichert Th., M. Deicher, G. Grübel, R. Keller, N. Schulz, and H. Skudlik. 1989. Indium-defect complexes in silicon studied by perturbed angular correlation spectroscopy. Appl. Phys. A 48: 59–85.
514. Wichert, T. 1999. Perturbed angular correlation studies of defects. In Semiconductors and Semimetals Vol. 51B, ed. M. Stavola, pp. 297–405. San Diego, CA: Academic Press.
515. Williams, P. 1983. Secondary ion mass spectrometry. In Applied Atomic Collision Physics Vol. 4, ed. S. Datz, pp. 327–377. New York: Academic Press.
516. xAs on its Curie temperature. Phys. Rev. B 65: 201303 (4 pages).
517. Ziegler, J.F., ed. 1984. Ion Implantation Science and Technology. New York: Academic Press.
518. Angilello, J., R.M. Potemski, and G.R. Woolhouse. 1975. Etch pits and dislocations in {100} GaAs wafers. J. Appl. Phys. 46: 2315–2316.
519. Binnig, G., H. Rohrer, Ch. Gerber, and E. Weibel. 1982. Surface studies by scanning tunneling microscopy. Phys. Rev. Lett. 49: 57–61.
520. Binnig, G., C.F. Quate, and Ch. Gerber. 1986. Atomic force microscope. Phys. Rev. Lett. 56: 930–933.
521. Cullity, B.D. 1978. Elements of X-ray Diffraction. Reading, MA: Addison-Wesley. Dash, W.C. 1957. The observation of dislocations in silicon. In Dislocations and Mechanical Properties of Crystals, eds. J.C. Fisher, W.G. Johnston, R. Thompson, and T. Vreelan, pp. 55–67. New York: Wiley.
522. Davisson, C., and L.H. Germer. 1927. Diffraction of electrons by a crystal of nickel. Phys. Rev. 30: 705–740.
523. Everhart, T.E., O.C. Wells, and R.K. Matta. 1964. A novel method of semiconductor device measurements. Proc. IEEE 52: 1642–1647.
524. Farshchi, R., D.J. Hwang, R.V. Chopdekar, P.D. Ashby, C.P. Grigoropoulos, and O.D. Dubon. 2009. Ultrafast pulsed-laser dissociation of Mn-H complexes in GaAs. J. Appl. Phys. 106: 103918 (4 pages).
525. Feenstra, R.M., J.A. Stroscio, J. Tersoff, and A.P. Fein. 1987. Atom-selective imaging of the GaAs(110) surface. Phys. Rev. Lett. 58: 1192–1195.
526. Feldman, L.C., and J.W. Mayer. 1986. Fundamentals of Surface and Thin Film Analysis. New York: North-Holland.
527. Föll, H., and B.O. Kolbesen. 1975. Formation and nature of swirl defects in silicon. Appl. Phys. A 8: 319–331.
528. Friedbacher, G. 2002. Scanning probe microscopy. In Surface and Thin Film Analysis, eds. H. Bubert and H. Jenett, pp. 276–290. Weinheim, Germany: Wiley-VCH Verlag.
529. Fultz, B., and J.M. Howe. 2001. Transmission Electron Microscopy and Diffractometry of Materials. Berlin: Springer-Verlag.
530. Goldstein, J.I., D.E. Newbury, P. Echlin et al. 1992. Scanning Electron Microscopy and X-ray Microanalysis, 2nd ed. New York: Plenum Press.
531. Haegel, N.M, S.E. Williams, C. Frenzen, and C. Scandrett. 2009. Imaging charge transport and dislocation networks in ordered GaInP. Physica B 404: 4963–4966.
532. Haller, E.E., G.S. Hubbard, W.L. Hansen, and A. Seeger. 1977. Divacancy-hydrogen complexes in dislocation-free high-purity germanium. In Radiation Effects in Semiconductors 1976, Inst. Phys. Conf. Ser. No. 31, eds. N.B. Urli and J.W. Corbett, 309–318. Bristol: Institute of Physics.
533. Hecht, E. 2002. Optics, 4th ed. San Francisco, CA: Addison Wesley.
534. Hirsch, P.B., A. Howie, R.B. Nicholson, D.W. Pashley, and M.J.Whelan. 1965. Electron Microscopy of Thin Crystals. Washington, DC: Butterworth.
535. Holmes, P.J. 1962. The Electrochemistry of Semiconductors, 368–377. New York: Academic Press.
536. Holt, D.B., and B.G. Yacobi. 2007. Extended Defects in Semiconductors. New York: Cambridge University Press.
537. Huso, J., J.L. Morrison, J. Mitchell et al. 2009. Optical transitions and multiphonon Raman scattering of Cu doped ZnO and MgZnO ceramics. Appl. Phys. Lett. 94: 061919 (3 pages).
538. Iqbal, M.Z. 1980. Bi-refringence observations of strain and plastic deformation in GaP. J. Mater. Res. 15: 781–784.
539. Jäger, N.D., and E.R. Weber. 1999. Scanning tunneling microscopy of defects in semiconductors. In Semiconductors and Semimetals Vol. 51B, ed. M. Stavola, 261–296.
540. 2 precipitates in silicon. Appl. Phys. Lett. 58: 911–913.
541. Klein, C.A. 1968. Band-gap dependence and related features of radiation ionization energies in semiconductors. J. Appl. Phys. 39: 2029–2038.
542. Lewis, A., M. Isaacson, A. Harootunian, and A. Murray. 1984. Development of a 500 Å spatial resolution light microscope: I. Light is efficiently transmitted through λ/6 diameter apertures. Ultramicroscopy 13: 227–231.
543. Luber, D.R., F.M. Bradley, N.M. Haegel, M.C. Talmadge, M.P. Coleman, and T.D. Boone. 2006. Imaging transport for the determination of minority carrier diffusion length. Appl. Phys. Lett. 88: 163509 (3 pages).
544. Paskov, P.P., R. Schifano, B. Monemar, T. Paskova, S. Figge, and D. Hommel. 2005. Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition. J. Appl. Phys. 98: 093519 (7 pages).
545. Pohl, D.W., W. Denk, and M. Lanz. 1984. Optical stethoscopy: Image recording with resolution λ/20. Appl. Phys. Lett. 44: 651–653.
546. Randle, V., and O. Engler. 2000. Introduction to Texture Analysis: Macrotexture, Microtexture and Orientation Mapping. Amsterdam: Gordon and Breach.
547. Ravi, K.V., and C.J. Varker. 1974. Comments on the distinction between “striations” and “swirls” in silicon. Appl. Phys. Lett. 25: 69–71.
548. Robinson, J.T., F. Ratto, O. Moutanabbir et al. 2007. Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si. Nano Lett. 7: 2655–2659.
549. Romano, L.T., C.G. Van de Walle, J.W. Ager III, W Götz, and R.S. Kern. 2000. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition. J. Appl. Phys. 87: 7745–7752.
550. Runyan, W.R., and T.J. Shaffner. 1998. Semiconductor Measurements and Instrumentation. New York: McGraw-Hill.
551. Schneider, R. 2002. Electron energy loss spectroscopy (EELS). In Surface and Thin Film Analysis, eds. H. Bubert and H. Jenett, pp. 50–70. Weinheim, Germany: Wiley-VCH Verlag.
552. Schroder, D.K. 2006. Semiconductor Material and Device Characterization, 3rd ed. New York: John Wiley & Sons.
553. Schwander, P., W.-D. Rau, C. Kisielowski, M. Gribelyuk, and A. Ourmazd. 1999. Defect processes in semiconductors studied at the atomic level by transmission electron microscopy. In Semiconductors and Semimetals Vol. 51B, ed. M. Stavola, pp. 225–259. San Diego, CA: Academic Press.
554. Soudi, A., P. Dhakal, and Y. Gu. 2010. Diameter dependence of the minority carrier diffusion length in individual ZnO nanowires. Appl. Phys. Lett. 96: 253115 (3 pages).
555. Suryanarayana, C., and M.G. Norton. 1998. X-ray Diffraction: A Practical Approach. New York: Plenum Press.
556. Van Hove, M.A., W.H. Weinberg, and C.-M. Chan. 1986. Low-Energy Electron Diffraction. Berlin: Springer-Verlag.
557. Varker, C.J. 1979. SEM methods for the characterization of semiconductor materials and devices. In Nondestructive Evaluation of Semiconductor Materials and Devices, ed. J. N. Zemel, pp. 515–580. New York: Plenum Press.
558. Vogel, F.L., W.G. Pfann, H.E. Corey, and E.E. Thomas. 1953. Observations of dislocations in lineage boundaries in germanium. Phys. Rev. 90: 489–490.
559. Witt, A.F., and H.C. Gatos. 1966. Impurity distribution in single crystals. J. Electrochem. Soc. 113: 808–813.
560. Yacobi, B.G., and D.B. Holt. 1986. Cathodoluminescence scanning electron microscopy of semiconductors. J. Appl. Phys. 59: R1–R24.
561. Ga) in GaAs. Phys. Rev. Lett. 72: 1490–1493.