Oxygen diffusion and precipitation in Czochralski silicon

Journal of Physics Condensed Matter

Volumn 12, Issue 25, 2000, Pages

  Newman, R C ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL IMPURITIES; CRYSTAL LATTICES; DEGRADATION; DIFFUSION IN SOLIDS; DIMERS; HIGH TEMPERATURE EFFECTS; OXYGEN; PRECIPITATION (CHEMICAL);

CZOCHRALSKI SILICON; METALLIC CONTAMINANTS; OXYGEN DIFFUSION; THERMAL DONOR DEFECTS;

SEMICONDUCTING SILICON;

EID: 0033707868     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/12/25/201     Document Type: Article

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