Chapter 9: Hydrogen in III-V and II-VI Semiconductors

Semiconductors and Semimetals

Volumn 61, Issue C, 1999, Pages 373-440

  McCluskey, Matthew D ^a   Haller, Eugene E ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN;

III-V AND II-VI SEMICONDUCTORS;

II-VI SEMICONDUCTORS;

EID: 0006719620     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62711-8     Document Type: Chapter

References (125)

1. Ahlburn B.T., and Ramdas A.K. Phys. Rev. 167 (1968) 717
2. Amano H., Kito M., Hiramatsu K., and Akasaki I. Jpn. J. Appl. Phys. 28 (1989) L2112
3. Becla P., Witt A., Lagowski J., and Walukiewicz W. Appl. Phys. Lett. 67 (1995) 395
4. Bliss D.F., Bryant G.G., Gabbe D., Iseler G., Haller E.E., and Zach F.X. Proceedings of the 7th International Conference on InP and Related Materials. (1995), IEEE, New York 678
5. Bonapasta A. Amore. Phys. Rev. B 48 (1993) 8771
6. Bouanani-Rahbi R., Pajot B., Ewels C.P., öberg S., Goss J., Jones R., Nissim Y., Theys B., and Blaauw C. In: Ammerlaan C.A.J., and Pajot B. (Eds). Shallow-Level Centers in Semiconductors (1997), World Scientific, Singapore 171
7. Bourret-Courchesne E.D. Appl. Phys. Lett. 68 (1996) 2481
8. Brandt M.S., Ager III J.W., Götz W., Johnson N.M., Harris J.S., Molnar R.J., and Moustakas T.D. Phys. Rev. B 49 (1994) 14758
9. Breuer S.J., Jones R., Briddon P.R., and öberg S. Phys. Rev. B 53 (1996) 16289
10. Burchard, A., Deicher, M., Forkel-Wirth, D., Haller, E. E., Magerle, R., Prospero, A., Stöltzer, A., and the ISOLDE Collaboration. 1997a In Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19). Mater. Sci. Forum, 258-263, 1099.
11. Burchard, A., Correia, J. G., Deicher, M., Forkel-Wirth, D., Magerle, R., Prospero, A., Stöltzer, A., and the ISOLDE Collaboration. 1997b In Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19). Mater. Sci. Forum, 258-263, 1223.
12. Chang K.-J. Solid State Commun. 78 (1991) 273
13. Chang K.-J., Cheong B.H., and Park C.H. Solid State Commun. 84 (1992) 1005
14. Cheng Y., Stavola M., Abernathy C.R., Pearton S.J., and Hobson W.S. Phys. Rev. B 49 (1994) 2469
15. Chevallier J., Dautremont-Smith W.C., Tu C.W., and Pearton S.J. Appl. Phys. Lett. 47 (1985) 108
16. Chevallier J., Clerjaud B., and Pajot B. In: Pankove J.I., and Johnson N.M. (Eds). Semiconductors and Semimetals, 34 (1991), Academic Press, New York
17. Chevallier J., Machayekhi B., Grattepain C.M., Rahbi R., and Theys B. Phys. Rev. B 45 (1992) 8803
18. Clerjaud B., Gendron F., Krause M., and Ulrici W. Phys. Rev. Lett. 65 (1990) 1800
19. Clerjaud B., Cčte D., Hahn W.-S., and Ulrici W. Appl. Phys. Lett. 58 (1991) 1860
20. Clerjaud, B., Cčte, D., Gendron, F., Hahn, W.-S., Krause, M., Porte, C., and Ulrici, W. 1992a In Proceedings of the 16th International Conference on Defects in Semiconductors (ICDS- 16). Mater. Sci. Forum, 83-87, 563.
21. Clerjaud B., Cčte D., Hahn W.-S., Wasik D., and Ulrici W. Appl. Phys. Lett. 60 (1992) 2374
22. Clerjaud B., Cčte D., Svob L., Marfaing Y., and Druilhe R. Solid State Commun. 85 (1993) 167
23. Clerjaud B., Cčte D., Hahn W.-S., Lebkiri A., Ulrici W., and Wasik D. Phys. Rev. Lett. 77 (1996) 4930
24. Clerjaud B., Cčte D., Hahn W.-S., Lebkiri A., Ulrici W., and Wasik D. Phys. Stat. Sol. (a 159 (1997) 121
25. Darwich R., Pajot B., Rose B., Robein D., Theys B., Rahbi R., Porte C., and Gendron F. Phys. Rev. B 48 (1993) 17776
26. Darwich, R., Song, C., Rahbi, R., and Pajot, B. 1994 In Proceedings of the 17th International Conference on Defects in Semiconductors (ICDS-17). Mater. Sci. Forum, 143-147, 927.
27. Davidson B.R., Newman R.C., Bullough T.J., and Joyce T.B. Phys. Rev. B 48 (1993) 17106
28. Davidson B.R., Newman R.C., Kaneko T., and Naji O. Phys. Rev. B 50 (1994) 12250
29. Davidson B.R., Newman R.C., and Bachem K.H. Phys. Rev. B 52 (1995) 5179
30. Davidson B.R., Newman R.C., Joyce T.B., and Bullough T.J. Semicond. Sci. Technol. 11 (1996) 455
31. Davidson B.R., Newman R.C., and Button C.C. Phys. Rev. B 58 (1998) 15609
32. Dischler B., Fuchs F., and Seelewind H. Physica B 170 (1991) 245
33. Elliot R.J., Hayes W., Jones G.D., MacDonald H.F., and Sennet C.T. Proc. R. Soc. Lond. A289 (1965) 1
34. Ewels C.P., öberg S., Jones R., Pajot B., and Briddon P.R. Semicond. Sci. Technol. 11 (1996) 502
35. Fischer D.W., Manasreh M.O., and Matous G. J. Appl. Phys. 71 (1992) 4805
36. Forkel-Wirth D., Achtziger N., Burchard A., and Correia J.C. Solid State Commun. 93 (1995) 425
37. Gardener N.F., Hartmann Q.J., Baker J.E., and Stillman G.E. Appl. Phys. Lett. 67 (1995) 3004
38. Giannozzi P., de Gironcoli S., Pavone P., and Baroni S. Phys. Rev. B 43 (1991) 7231
39. Götz W., Johnson N.M., Walker J., Bour D.P., Amano H., and Akasaki I. Appl. Phys. Lett. 67 (1995) 2666
40. Götz W., Johnson N.M., Bour D.P., McCluskey M.D., and Haller E.E. Appl. Phys. Lett. 69 (1996) 3725
41. Haller E.E. In: Mahajan S. (Ed). Handbook on Semiconductors, 3b (1994), North-Holland, Amsterdam 1515
42. Irwin J.C., and LaCombe L. J. Appl. Phys. 45 (1974) 567
43. Johnson N.M., Burnham R.D., Street R.A., and Thornton R.L. Phys. Rev. B 33 (1985) 1102
44. Johnson N.M., Herring C., and Chadi D.J. Phys. Rev. Lett. 56 (1986) 769
45. Jones R., and öberg S. Phys. Rev. B 44 (1991) 3673
46. Jones R., Goss J., Ewels C., and öberg S. Phys. Rev. B 50 (1994) 8378
47. Jost W., Kunzer M., Kaufmann U., and Bender H. Phys. Rev. B 50 (1994) 4341
48. Kamata A., Mitsuhashi H., and Fujita H. Appl. Phys. Lett. 63 (1993) 3353
49. Kozuch D.M., Stavola M., Pearton S.J., Abernathy C.R., and Lopata J. Appl. Phys. Lett. 57 (1990) 2561
50. Kozuch D.M., Stavola M., Pearton S.J., Abernathy C.R., and Hobson W.S. J. Appl. Phys. 73 (1993) 3716
51. Landolt-Börnstein, New Series III. In: Madelung O. (Ed). Semiconductors: Intrinsic Properties of Group IV Elements and III-V, II-VI and I-VII Compounds, 22a (1987), Springer-Verlag, Berlin
52. Lang D.V., and Logan R.A. Phys. Rev. Lett. 39 (1977) 635
53. Lee J.W., Pearton S.J., Zolper J.C., and Stall R.A. Appl. Phys. Lett. 68 (1996) 2102
54. Lee S.-G., and Chang K.J. Phys. Rev. B 54 (1996) 8522
55. Li Ming M., Strachan D.J., Ritter T.M., Tamargo M., and Weinstein B.A. Phys. Rev. B 50 (1994) 4385
56. McCluskey, M. D. 1997 Ph.D. thesis, University of California, Lawrence Berkeley National Laboratory Report No. LBNL-40451.
57. McCluskey M.D., Haller E.E., Walker J., and Johnson N.M. Appl. Phys. Lett. 65 (1994) 2191
58. McCluskey, M. D., Haller, E. E., Walker, J., and Johnson, N. M. 1995a Inst. Phys. Conf. Proc. Ser. No. 141, Great Britain: Institute of Physics, p. 287.
59. McCluskey M.D., Haller E.E., Walker J., and Johnson N.M. Phys. Rev. B 52 (1995) 11859
60. McCluskey M.D., Haller E.E., Walukiewicz W., and Becla P. Phys. Rev. B 53 (1996) 16297
61. McCluskey M.D., Haller E.E., Zach F.X., and Bourret-Courchesne E.D. Appl. Phys. Lett. 68 (1996) 3476
62. McCluskey M.D., Haller E.E., Walker J., Johnson N.M., Vetterhöffer J., Weber J., Joyce T.B., and Newman R.C. Phys. Rev. B 56 (1997) 6404
63. McCluskey, M. D., Haller, E. E., Walukiewicz, W., and Becla, P. 1997b In Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS-19). Mater. Sci. Forum, 258-263, 1247.
64. McCluskey M.D., Haller E.E., Walukiewicz W., and Becla P. Solid State Commun. 106 (1998) 587
65. McQuaid S.A., Binns M.J., Newman R.C., Lightowlers E.C., and Clegg J.B. Appl. Phys. Lett. 62 (1993) 1612
66. Mizuta M., Tachikawa M., Kukimoto H., and Minomura S. Jpn. J. Appl. Phys. 24 (1985) L143
67. Morimoto K., and Fujino T. Appl. Phys. Lett. 63 (1993) 2384
68. Morse P.M. Phys. Rev. Lett. 34 (1929) 57
69. Moustakas T.D., and Molnar R. Mater. Res. Soc. Symp. Proc. 281 (1993) 753
70. Nakamura S., Mukai T., Senoh M., and Iwasa N. Jpn. J. Appl. Phys. 31 (1992) L139
71. Nakamura S., Senoh M., Iwasa N., and Nagahama S. Jpn. J. Appl. Phys. 34 (1995) L797
72. Nakamura S., Senoh M., Nagahama S., Iwasa N., Yamada T., Matsushita T., Kiyoko H., and Sugimoto Y. Jpn. J. Appl. Phys. 35 (1996) L74
73. Nakayama M. J. Phys. Soc. Japan 27 (1969) 636
74. Nelson R.J. Appl. Phys. Lett. 31 (1977) 351
75. Neugebauer J., and Van de Walle C. Phys. Rev. Lett. 75 (1995) 4452
76. Neugebauer J., and Van de Walle C. Appl. Phys. Lett. 68 (1996) 1829
77. Newman R.C. Adv. Phys. 18 (1969) 545
78. Newman R.C. Semicond. Sci. Technol. 5 (1990) 911
79. Nishimura, K., Nagao, Y., and Sakai, K. 1993 In Proceedings of the 6th International Conference on II-VI Compounds and Related Optoelectronic Materials. Journal of Crystal Growth, 138, 114.
80. Ohkawa K., Karasawa T., and Mitsuyu T. Jpn. J. Appl. Phys. 30 (1992) L152
81. Pajot B., and Song C. Phys. Rev. B 45 (1992) 6484
82. Pankove J.I. In: Pankove J.I., and Johnson N.M. (Eds). Semiconductors and Semimetals, 34 (1991), Academic Press, New York
83. Pankove J.I., and Johnson N.M. Semiconductors and Semimetals, 34 (1991), Academic Press, New York
84. Park R.M., Troffer M.B., Rouleau C.M., DePuydt J.D., and Haase M.A. Appl. Phys. Lett. 57 (1990) 2127
85. Pavesi L. Solid State Commun. 83 (1992) 317
86. Pavesi L., and Gianozzi P. Phys. Rev. B 46 (1992) 4621
87. Polyakov A.Y., Pearton S.J., Wilson R.G., Rai-Chadhury P., Hillard R.J., Bao X.J., Stam M., Milnes A.G., Schlesinger T.E., and Lopata J. Appl. Phys. Lett. 60 (1992) 1318
88. Polyakov A.Y., Ye M., Pearton S.J., Wilson R.G., Milnes A.G., Stam M., and Erickson J. J. Appl. Phys. 73 (1993) 2882
89. Ponce F.A., and Bour D.P. Nature 386 (1997) 351
90. Pritchard R.E., Davidson B.R., Newman R.C., Bullough T.J., Joyce T.B., Jones R., and öberg S. Semicond. Sci. Technol. 9 (1994) 140
91. Pritchard R.E., Newman R.C., Wagner J., Fuchs F., Jones R., and öberg S. Phys. Rev. B 50 (1994) 10628
92. Rahbi R., Pajot B., Chevallier J., Marbeuf A., Logan R.C., and Gavand M. J. Appl. Phys. 73 (1993) 1723
93. Rahbi R., Theys B., Jones R., Pajot B., öberg S., Somogyi K., Fille M.L., and Chevallier J. Solid State Commun. 91 (1994) 187
94. Rosen B. International Tables of Selected Constants, 17 (1970), Pergamon Press, New York
95. Sciacca Dean M., Mayur A.J., Shin N., Miotkowski I., Ramdas A.K., and Rodriguez S. Phys. Rev. B 51 (1995) 6971
96. Shimanouchi T. Tables of Molecular Vibrational Frequencies Consolidated, 1 (1972), National Bureau of Standards, Washington
97. Song, C. 1992 Ph.D. thesis, University of Paris.
98. Stavola M., and Pearton S.J. In: Pankove J.I., and Johnson N.M. (Eds). Semiconductors and Semimetals, 34 (1991), Academic Press, New York
99. Stavola, M., Kozuch, D. M., Abernathy, C. R., and Hobson, W. S. 1992 In Advanced III-V Compound Semiconductor Growth, Processing and Devices, S. J. Pearton, D. K. Sadana, and J. M. Zavada, eds. Mat. Res. Soc. Proc., 240, 75.
100. Stein H.J. Appl. Phys. Lett. 64 (1994) 1520
101. Svensson J.H., and Weber J. Mater. Sci. Forum 177-178 (1993) 304
102. Svob L., Marfaing Y., Clerjaud B., Cčte D., Lebkiri A., and Druilhe R. J. Crystal Growth 159 (1996) 72
103. Tuncel E., and Sigg H. Phys. Rev. B 48 (1993) 5225
104. Van de Walle C.G., Denteneer P.J.H., Bar-Yam Y., and Pantelides S.T. Phys. Rev. B 39 (1989) 10791
105. Veloarisoa I.A., Stavola M., Kozuch D.M., Peale R.E., and Watkins G.D. Appl. Phys. Lett. 59 (1991) 2121
106. Veloarisoa, I. A., Kozuch, D. M., Stavola, M., Peale, R. E., Watkins, G. D., Pearton, S. J., Abernathy, C. R., and Hobson, W. S. 1992 In Proceedings of the 16th International Conference on Defects in Semiconductors (ICDS-16). Mater. Sci. Forum, 83-87, 111.
107. Veloarisoa I.A., Stavola M., Cheng Y.M., Uftring S., Watkins G.D., Pearton S.J., Abernathy C.R., and Lopata J. Phys. Rev. B 47 (1993) 16237
108. Ves S., Strössner K., and Cardona M. Solid State Commun. 57 (1986) 483
109. Vetterhöffer J., Svensson J.H., Weber J., Leitch A.W.R., and Botha J.R. Phys. Rev. B 50 (1994) 2708
110. Vetterhöffer J., and Weber J. Phys. Rev. B 53 (1996) 12835
111. Vetterhöffer J., Wagner J., and Weber J. Phys. Rev. Lett. 77 (1996) 5409
112. Wagner J., Maier M., Lauterback Th., Bachem K.H., Fischer A., Ploog K., Mörsch G., and Kamp M. Phys. Rev. B 45 (1992) 9120
113. Wagner J., Bachem K.H., Davidson B.R., Newman R.C., Bullough T.J., and Joyce T.B. In: Lockwood D.J. (Ed). Proceedings of 22nd International Conference on the Physics of Semiconductors, 3 (1995), World Scientific, Singapore 2323
114. Wagner J., Pritchard R.E., Davidson B.R., Newman R.C., Bullough T.J., Joyce T.B., Button C., and Roberts J.S. Semicond. Sci. Technol. 10 (1995) 639
115. Watts R.K., Holton W.C., and de Wit M. Phys. Rev. B 3 (1971) 404
116. Williams P.M., Watkins G.D., Uftring S., and Stavola M. Phys. Rev. Lett. 70 (1993) 3816
117. Wolk J.A., Ager III J.W., Duxstad K.J., Haller E.E., Taskar N.R., Dorman D.R., and Olego D.J. Appl. Phys. Lett. 63 (1993) 2756
118. Woodhouse K., Newman R.C., deLyon T.J., Woodall J.M., Scilla G.J., and Cardone F. Semicond. Sci. Technol. 6 (1991) 330
119. Yu Z., Buczkowski S.L., Hirsch L.S., and Myers T.H. J. Appl. Phys. 80 (1996) 6425
120. Zach F.X. J. Appl. Phys. 75 (1994) 7894
121. Zach F.X., Haller E.E., Gabbe D., Iseler G., Bryant G.G., and Bliss D.F. J. Electr. Mater. 25 (1996) 331
122. Zavada, J. M., and Wilson, R. G. 1994 In Proceedings of the 17th International Conference on Defects in Semiconductors (ICDS-17). Mater. Sci. Forum, 148-149, 189.
123. Zheng J.-F., and Stavola M. Phys. Rev. Lett. 76 (1996) 1154
124. Zhou, J. A., Song, C. Y., Zheng, J.-F., Stavola, M., Abernathy, C. R., and Pearton, S. J. 1997 In Proceedings of the 19th International Conference on Defects in Semiconductors (ICDS- 19). Mater. Sci. Forum, 258-263, 1293.
125. Zolper J.C., Wilson R.G., Pearton S.J., and Stall R.A. Appl. Phys. Lett. 68 (1996) 1945