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Volumn 56, Issue 15, 1997, Pages 9520-9523

Interstitial oxygen in silicon under hydrostatic pressure

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000769310     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.56.9520     Document Type: Article
Times cited : (22)

References (19)
  • 8
    • 78649765431 scopus 로고
    • E. E. Haller, in Defect and Impurity Engineered Semiconductors and Devices, edited by S. Ashok, J. Chevallier, I. Akasaki, N. M. Johnson, and B. L. Sopori, MRS Symposia Proceedings No. 378 (Materials Research Society, Pittsburgh, 1995), p. 547.
    • (1995) Defect and Impurity Engineered Semiconductors and Devices , pp. 547
    • Haller, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.