Electron paramagnetic resonance study of hydrogen-vacancy defects in crystalline silicon

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 7, 1998, Pages 3842-3852

  Stallinga, P ^a   Johannesen, P ^a   Herstrom S ^a   Bonde Nielsen, K ^a   Bech Nielsen, B ^a   Byberg, J ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000233585     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.3842     Document Type: Article

References (34)

1. K. Bergman, M. Stavola, S. J. Pearton, and T. Hayes, Phys. Rev. B 38, 9643 (1988).
2. J. D. Holbech, B. Bech Nielsen, R. Jones, P. Sitch, and S. Öberg, Phys. Rev. Lett. 71, 875 (1993).
3. B. Bech Nielsen, L. Hoffmann, and M. Budde, Mater. Sci. Eng. B 36, 259 (1996).
4. M. Budde, B. Bech Nielsen, P. Leary, J. Goss, R. Jones, P. R. Briddon, S. Öberg, and S. J. Breuer, Phys. Rev. B 57, 4397 (1998).
5. K. Murakami, N. Fukata, S. Sasaki, K. Ishioka, M. Kitajima, S. Fujimura, J. Kikuchi, and H. Haneda, Phys. Rev. Lett. 77, 3161 (1996).
6. A. W. R. Leitch, V. Alex, and J. Weber, in Defects in Semiconductors 19, edited by G. Davies and M. H. Nazaré, Materials Science Forum Vols. 258-263 (Trans-Tech, Aedermannsdorf, 1997), p. 241.
7. A. D. Marwick, G. S. Oehrlein, and N. M. Johnson, Phys. Rev. B 36, 4539 (1987).
8. B. Bech Nielsen, J. U. Andersen, and S. J. Pearton, Phys. Rev. Lett. 60, 321 (1988).
9. N. M. Johnson, C. Herring, and D. J. Chadi, Phys. Rev. Lett. 56, 769 (1986).
10. Yu. V. Gorelkinskii and N. N. Nevinnyi, Physica B 170, 155 (1991).
11. B. Holm, K. Bonde Nielsen, and B. Bech Nielsen, Phys. Rev. Lett. 66, 2360 (1991).
12. B. Bech Nielsen, K. Bonde Nielsen, and J. R. Byberg, in Defects in Semiconductors 17, edited by H. Heinrich and W. Jantsch, Materials Science Forum Vols. 143-147 (Trans-Tech, Aedermannsdorf, 1994), p. 909.
13. T. L. Cottrell, The Strengths of Chemical Bonds (Butterworths, London, 1954), pp. 272-288.
14. B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen, and J. R. Byberg, Phys. Rev. Lett. 79, 1507 (1997).
15. J. W. Corbett and G. D. Watkins, Phys. Rev. Lett. 7, 314 (1961).
16. Y. H. Lee and J. W. Corbett, Phys. Rev. B 9, 4351 (1974).
17. H. Lütgemeier and K. Schnitzke, Phys. Lett. A 25, 232 (1967).
18. V. A. Botvin, Yu. V. Gorelkinskii, V. O. Sigle, and M. A. Chubisov, Fiz. Tekh. Poloprovodn. 6, 1683 (1972) [Sov. Phys. Semicond. 6, 1453 (1973)].
19. R. L. Kleinhenz, Y. H. Lee, V. A. Singh, P. M. Mooney, A. Jaworowski, L. M. Roth, J. C. Corelli, and J. W. Corbett, Inst. Phys. Conf. Ser. 46, 200 (1979).
20. A. V. Dvurechenskii and A. A. Karanovich, Fiz. Tekh. Poloprovodn. 19, 1944 (1985) [ Sov. Phys. Semicond. 19, 1198 (1985)].
21. L. C. Allen, H. M. Gladney, and S. H. Glarum, J. Chem. Phys. 40, 3135 (1964).
22. S. H. Glarum, Rev. Sci. Instrum. 36, 771 (1965).
23. Y. H. Lee and J. W. Corbett, Phys. Rev. B 8, 2810 (1973).
24. G. D. Watkins, J. Phys. Soc. Jpn. 18, Suppl. II, 22 (1963).
25. G. D. Watkins, in Radiation Damage in Semiconductors (Dunod, Paris, 1964), p. 97.
26. G. D. Watkins and J. W. Corbett, Phys. Rev. 134, A1359 (1964).
27. W. E. Carlos, Appl. Phys. Lett. 50, 1450 (1987).
28. M. Cook and C. T. White, Phys. Rev. B 38, 9674 (1988).
29. P. Deák, L. C. Snyder, M. Heinrich, C. R. Ortiz, and J. W. Corbett, Physica B 170, 253 (1991).
30. B. Bech Nielsen, L. Hoffmann, M. Budde, R. Jones, J. Goss, and S. Öberg, in Defects in Semiconductors 18, edited by M. Su-ezawa and H. Katayama-Yoshida, Materials Science Forum Vols. 196-201 (Trans-Tech, Zürich, 1995), p. 933.
31. Y. K. Park, S. T. Estreicher, C. W. Myles, and P. A. Fedders, Phys. Rev. B 52, 1718 (1995).
32. Y. J. Chabal, Physica B 170, 447 (1991).
33. D. F. Daly and K. A. Pickar, Appl. Phys. Lett. 15, 267 (1969).
34. P. Stallinga, T. Gregorkiewicz, C. A. J. Ammerlaan, and Yu. V. Gorelkinskii, Phys. Rev. Lett. 71, 117 (1993).