A calibration of the H-CAs stretch mode in GaAs

Semiconductor Science and Technology

Volumn 11, Issue 3, 1996, Pages 455-457

  Davidson, B R ^a   Newman, R C ^a   Joyce, T B ^b   Bullough, T J ^b  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALIBRATION; CAPACITANCE MEASUREMENT; CARBON; CHEMICAL BEAM EPITAXY; CHEMICAL BONDS; HYDROGEN; INFRARED SPECTROSCOPY; MOLECULAR VIBRATIONS; PASSIVATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

ELECTROCHEMICAL CAPACITAN VOLTAGE PROFILING; HALL MEASUREMENTS; HYDROGEN PLASMA; INFRARED RADIATION INTEGRATED ABSORPTION; LOCAL VIBRATIONAL MODE INFRARED SPECTROSCOPY; STRETCH MODE;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030110301     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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