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Physical Review Letters

Volumn 86, Issue 26 I, 2001, Pages 6010-6013

Photoluminescence of isotopically purified silicon: How sharp are bound exciton transitions?

(8) Karaiskaj, D a Thewalt, M L a Ruf, T b Cardona, M b Pohl, H J c Deviatych, G G d Sennikov, P G d Riemann, H e

a SIMON FRASER UNIVERSITY (Canada)

b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG (Germany)

c VITCON Projectconsult GmbH (Germany)

d INSTITUTE OF CHEMISTRY OF HIGH PURITY SUBSTANCES (Russian Federation)

e LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EXCITONS; INTERFEROMETERS; MAGNETIC FIELDS; PHONONS; PHOTOLUMINESCENCE; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING DIAMONDS; SEMICONDUCTING GERMANIUM; THERMAL CONDUCTIVITY;

BOUND EXCITON TRANSITIONS; INDIRECT BAND GAP ENERGY; PHONON BROADENINGS; PHONON ENERGIES; VIRTUAL CRYSTAL APPROXIMATION;

SEMICONDUCTING SILICON;

EID: 0035947966 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.86.6010 Document Type: Article

Times cited : (81)

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