Quantum-well intermixing for fabrication of lasers and photonic integrated circuits

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 794-802

  Hofstetter, Daniel ^a,b,c,e,f,g   Maisenhölder, Bernd ^a,b,d,h,i,j   Zappe, Hans P ^b,k,l,m,n,o  

^a PAUL SCHERRER INSTITUTE   (Switzerland)

^b CSEM   (Switzerland)

^c PALO ALTO RESEARCH CENTER   (United States)

^d Balzers Thin Films   (Liechtenstein)

^e Swiss Natl Institute of Technology   (Switzerland)

^f UNIVERSITY OF NEUCHÂTEL   (Switzerland)

^g Landis and Gyr Communications Corp   (Switzerland)

^h LOUISIANA STATE UNIVERSITY   (United States)

ⁱ UNIVERSITY OF KONSTANZ   (Germany)

^j R and D Department   (Liechtenstein)

^k MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^l UNIVERSITY OF CALIFORNIA   (United States)

^m IBM   (United States)

ⁿ FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^o Neu Technikum Buchs   (Switzerland)

more..

Author keywords

Interferometers; Monolithic integration; Multiwavelength lasers; Photonic integrated circuits; Quantum well intermixing

Indexed keywords

ENERGY GAP; INTEGRATED OPTOELECTRONICS; INTERFEROMETERS; LIGHT MODULATORS; OPTICAL WAVEGUIDES; QUANTUM WELL LASERS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

ALUMINUM GALLIUM ARSENIDE; IMPURITY-FREE VACANCY-ENHANCED DISORDERING TECHNIQUE; PHOTONIC INTEGRATED CIRCUITS; QUANTUM-WELL INTERMIXING;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0032120273     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720492     Document Type: Article

References (35)

1. W. D. Laidig, N. Holonyak, Jr., M. D. Camras, K. Hess, J. J. Coleman, and R. L. Thornton, "Disorder of an AlAs-GaAs super-lattice by impurity diffusion," Appl. Phys. Lett., vol. 38, no. 10, pp. 776-778, 1981.
2. J. Beauvais, S. G. Ayling, and J. H. Marsh, "Los-loss extended cavity lasers by dielectric cap disordering with a novel masking technique," IEEE Photon. Technol Lett., vol. 4, pp. 372-373, 1993.
3. G. F. Redinbo, H. G. Craighead, and J. M. Hong, "Proton implantation intermixing of GaAs/AlGaAs quantum wells," J. Appl. Phys., vol. 74, no. 5, pp. 3099-3102, 1993.
4. C. J. McLean, A. McKee, G. Lullo, A. C. Bryce, R. M. De La Rue, and J. H. Marsh, "Quantum well intermixing with a spatial selectivity using a pulsed laser technique," Electron. Lett., vol. 31, no. 15, pp. 1285-1286, 1995.
5. K. Yamaguchi, K. Okamoto, and T. Imai, "Selective area growth of GaAs by metalorganic chemical vapor deposition," Jpn. J. Appl. Phys., vol. 24, pp. 1666-1671, 1985.
6. D. Trommer, "Photonic integration on InP," in Proc. ECIO'95, Delft, The Netherlands, 1995, pp. 93-98.
7. D. Remiens, B. Rose, M. Carre, and V. Hornung, "CalnAsP/InP integrated ridge laser with a butt-joined transparent optical waveguide fabricated by single-step metalorganic vapor-phase epitaxy," J. Appl. Phys., vol. 68, pp. 2450-2453, 1990.
8. V. Hornung, D. Remiens, D. Robein, A. Gloukhian, and M. Carre, "Simple approach for monolithic integration of DFB laser and passive waveguide," Electron. Lett., vol. 27, pp. 1683-1685, 1990.
9. R. L. Thonton, J. E. Epler, and T. L. Paoli, "Monolithic integration of a transparent dielectric waveguide into an active laser cavity by impurity-induced disordering," Appl. Phys. Lett., vol. 51, pp. 1983-1985, 1987.
10. 1-yAs/GaAs multiple quantum wells," J. Electron. Mater., vol. 24, no. 7, pp. 805-812, 1995.
11. N. Holonyak, Jr., W. D. Laidig, M. D. Camras, J. Coleman, and P. D. Dapkus, Appl. Phys. Lett., vol. 39, pp. 102-104, 1981.
12. 1-xAs/GaAs quantum well heterostructure lasers by layer interdiffusion," J. Appl. Phys., vol. 54, pp. 5637-5641, 1983.
13. K. Meehan, N. Holonyak, Jr., R. D. Burnham, T. L. Paoli, and W. Streifer, "Wavelength modification (Δhω 10-40 meV) of room temperature continuous wave quantum well heterostructure laser diodes by thermal annealing," J. Appl. Phys., vol. 54, pp. 7190-7191, 1983.
14. 1-xAs/GaAs quantum well lasers," J. Appl. Phys., vol. 55, pp. 2672-2675, 1984.
15. K. Meehan, L. M. Brown, N. Holonyak, Jr., R. D. Burnham, T. L. Paoli, and W. Streiter, "Stripe-geometry A;GaAs/GaAs quantum-well heterostructure lasers defined by impurity-inducing disordering," Phys. Lett., vol. 44, no. 7, pp. 700-702, 1984.
16. 1-xAs/GaAs quantum well heterostructure lasers defined by Si-diffusion and impurity-induced disordering," Appl. Phys. Lett., vol. 46, no. 1, pp. 75-77, 1985.
17. 1-xAs/GaAs quantum well lasers," J. Appl. Phys., vol. 58, no. 12, pp. 4515-4520, 1985.
18. R. L. Thornton, D. F. Welch, R. D. Burnham, T. L. Paoli, and P. S. Cross, "High-power (2.1 W) 10-stripe AlGaAs laser arrays with Si-disordered facet windows," Appl. Phys. Lett., vol. 49, no. 23, pp. 1572-1574, 1986.
19. Hirayma, Y. Suzuki, and H. Okamoto, "Ion-species dependence of interdiffusion in ion-implanted GaAs/AlAs superlattice," Jpn. J. Appl. Phys., vol. 24, pp. 1498-1502, 1985.
20. J. J. Coleman, P. D. Dapkus, C. G. Kirkpatrick, M. D. Camras, and N. Holonyak, Jr., "Disorder of an AlAs/GaAs superlattice by silicon implantation," Appl. Phys. Lett., vol. 40, pp. 904-906, 1982.
21. xAs/GaAs superlattice disordering by ion-implantation and diffusion: A TEM study of mechanisms,: in SPIE Proc., Advanced Processing of Semiconductor Devices, S. D. Mukherjee, Ed. Bellingham, WA: SPIE, 1987, vol. 797, pp. 185-196.
22. D. G. Deppe and N. Holonyak, Jr., "Atom diffusion and impurity-induced layer disordering in quantum-well III-V-semiconductor heterostructure," J. Appl. Phys., vol. 64, no. 12, pp. R93-R113, 1988.
23. 1-xAs/GaAs quantum well heterostructures," J. Appl. Phys., vol. 61, no. 4, pp. 1372-1379, 1987.
24. J. D. Ralston, S. O'Brien, G. W. Wicks, and L. F. Eastman, "Room-temperature exciton transitions in partially-intermixed GaAs/AlGaAs superlattices," Appl. Phys. Lett., vol. 52, no. 18, pp. 1511-1513, 1988.
25. E. S. Koteles, B. Elman, P. Melman, J. Y. Chi, and C. A. Armiento, "Quantum well shape modification using vacancy generation and rapid thermal annealing," Opt. Quantum Electron., vol. 23, pp. S779-S787, 1991.
26. J. Beauvais, J. H. Marsh, A. H. Dean, A. C. Bryce, and C. Button, "Suppression on bandgap shifts in GaAs/AlGaAs quantum wells using strontium fluoride caps," Electron. Lett., vol. 28, no. 17, pp. 1670-1672, 1992.
27. D. Hofstetter, H. P. Zappe, J. E. Epler, and P. Riel, "Multiple wave-length Fabry-Pérot lasers fabricated by vacancy-enhanced quantum well disordering," Appl. Phys. Lett., vol. 67, pp. 1978-1980, 1995.
28. D. A. B. Miller, D. S. Chemla, T. C. Damen, A. C. Gossard, W. Wiegmann, T. H. Wood, and C. A. Burrus, "Band-edge electroabsorption in quantum well structures: The quantum confined Stark effect," Phys. Rev. Lett., vol. 53, no. 22, pp. 2173-2176.
29. R. J. Deri, W. Doldissen, R. J. Hawkins, R. Bhat, J. B. D. Soole, L. M. Schiavone, M. Seto, N. Andreadakis, Y. Silberberg, and M. A. Koza, "Efficient vertical coupling of photodiodes to InGaAsP rib waveguides," Appl. Phys. Lett., vol. 58, pp. 2749-2751, 1991.
30. K.-Y. Liou, U. Koren, E. C. Burrows, M. Oron, B. J. Miller, M. Young, G. Raybon, and C. A. Burrus, "Operation of integrated InGaAsP/InP optical amplifier-monitoring detector with feedback control circuit," IEEE Photon. Technol. Lett., vol. 2, pp. 878-880, 1990.
31. P. Vettinger, M. K. Benedict, G.-L. Bona, P. Buchmann, E. C. Gaboon, K. Dätwyler, H.-P. Dietrich, A. Moser, H. K. Seitz, O. Voegeli, D. J. Webb, and P. Wolf, "Full-wafer technology - A new approach to large-scale laser fabrication and integration," IEEE J. Quantum Electron., vol. 27, pp. 1319-1331, 1991.
32. C.-H. Chen and S.-C. Lee, "Monolithic integration of an AlGaAs/GaAs surface emitting laser diode and a photodetector," Appl. Phys. Lett., vol. 59, pp. 3592-3594, 1991.
33. D. Hofstetter, H. P. Zappe, J. E. Epler, and J. Süchtig, "Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographically-derined recessed gratings," Electron. Lett., vol. 30, pp. 1858-1859, 1994.
34. D. Hofstetter, H. P. Zappe, and J. E. Epler, "Ridge waveguide DBR lasers with nonabsorbing grating and transparent integrated waveguide," Electron. Lett., vol. 31, pp. 980-982, 1995.
35. D. Hofstetter, H. P. Zappe, and R. Dändliker, "Displacement measurements with monolithically integrated GaAs/AlGaAs-based Michelson interferometers," J. Lightwave Technol., vol. 10. pp. 663-671, Aug. 1997.