Vibrational lifetimes and isotope effects of interstitial oxygen in silicon and germanium

Physical Review Letters

Volumn 92, Issue 18, 2004, Pages

  Sun, B ^a   Yang, Q ^a   Newman, R C ^b   Pajot, B ^c   Tolk, N H ^d   Feldman, L C ^d   Lupke G ^a  

^a Asian and Middle Eastern Studies Program   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

^c SORBONNE UNIVERSITÉ   (France)

^d VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BLEACHING; ENERGY DISSIPATION; GERMANIUM; HYDROSTATIC PRESSURE; INTEGRATION; ISOTOPES; LATTICE VIBRATIONS; LOW TEMPERATURE EFFECTS; PHONONS; RESONANCE; SPECTROSCOPIC ANALYSIS; VIBRATION MEASUREMENT;

FULL WIDTH AT HALF MAXIMUM (FWHM); INTERSTITIAL OXYGEN; LOCAL VIBRATIONAL MODE (LVM); SUPERFLUORESCENCE; TRAVELING-WAVE OPTICAL PARAMETER AMPLIFIERS; VIBRATIONAL RELAXATION MECHANISMS;

SILICON;

EID: 2942650899     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.185503     Document Type: Article

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