Interaction of localized electronic states with the conduction band: band anticrossing in II-VI semiconductor ternaries

Physical Review Letters

Volumn 85, Issue 7, 2000, Pages 1552-1555

  Walukiewicz, W ^a   Shan, W ^a   Yu, K M ^a   Ager III, J W ^a   Haller, E E ^a,b   Miotkowski, I ^c   Seong, M J ^c   Alawadhi, H ^c   Ramdas, A K ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPOSITION EFFECTS; ELECTRONIC DENSITY OF STATES; ELECTRONIC PROPERTIES; ENERGY GAP; MATHEMATICAL MODELS; SUBSTITUTION REACTIONS; TERNARY SYSTEMS;

BAND ANTICROSSING MODEL; CONDUCTION BAND; ELECTRONEGATIVE ATOMS; SEMICONDUCTOR TERNARIES; ZINC TELLURIUM ALLOYS;

SEMICONDUCTOR MATERIALS;

EID: 0034245890     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.1552     Document Type: Article

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