Laplace-transform deep-level spectroscopy: The technique and its applications to the study of point defects in semiconductors

Journal of Applied Physics

Volumn 96, Issue 9, 2004, Pages 4689-4728

  Dobaczewski, L ^a   Peaker, A R ^b   Bonde Nielsen, K ^c  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF MANCHESTER   (United Kingdom)

^c AARHUS UNIVERSITY   (Denmark)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; ELECTRON EMISSION; GOLD; HYDROGEN; OXYGEN; PLATINUM; POINT DEFECTS; SEMICONDUCTOR MATERIALS; SIGNAL TO NOISE RATIO; SILICON;

CONDUCTION BAND; ENERGY SEPARATION; LAPLACE DEEP-LEVEL TRANSIENT SPECTROSCOPY (LDLTS); TIKHONOV REGULARIZATION;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 9744272467     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1794897     Document Type: Review

References (155)

1. C. T. Sah, L. Forbes, L. L. Rosier, and A. F. Tasch, Jr., Solid-State Electron. 13, 759 (1970).
2. W. Schokely and W. T. Read, Jr., Phys. Rev. 87, 835 (1952); S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
3. W. Schokely and W. T. Read, Jr., Phys. Rev. 87, 835 (1952); S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969).
4. C. H. Henry and D. V. Lang, Phys. Rev. B 15, 989 (1977).
5. P. Blood and J. W. Orton, The Electrical Characterization of Semiconductors; Majority Carriers and Electron States (Academic, London, 1992), pp. 596-648.
6. D. V. Lang, J. Appl. Phys. 45, 3023 (1974).
7. G. L. Miller, J. V. Ramirez, and D. A. H. Robinson, J. Appl. Phys. 46, 2638 (1975).
8. D. S. Day, M. Y. Tsai, and B. G. Streetman, J. Appl. Phys. 50, 5093 (1979).
9. F. D. Auret, Rev. Sci. Instrum. 57, 1597 (1986).
10. J. A. Borsuck and R. M. Swanson, IEEE Trans. Electron Devices 27, 2217 (1980).
11. C. R. Crowell and S. Aliphani, Solid-State Electron, 24, 25 (1981).
12. A. A. Istratov, J. Appl. Phys. 82, 2965 (1997).
13. G. Vincent, A. Chantre, and D. Bois, J. Appl. Phys. 50, 5484 (1979).
14. K. Ikossi-Anastasiou and K. P. Roenker, J. Appl. Phys. 61, 182 (1987).
15. D. D. Nolte and E. E. Haller, J. Appl. Phys. 62, 900 (1987).
16. C. Eiche, D. Maier, M. Schneider, D. Sinerius, J. Weese, K. W. Benz, and J. Honerkamp, J. Phys.: Condens. Matter 4, 6131 (1992).
17. A. A. Istratov and O. F. Vyvenko, Rev. Sci. Instrum. 70, 1233 (1999).
18. S. Misrachi, A. R. Peaker, and B. Hamilton, J. Phys. E 13, 1055 (1980).
19. N. Ostrowsky, D. Sornette, P. Parker, and E. R. Pike, Opt. Acta 28, 1059 (1981).
20. M. Bertero, P. Boccacei, and E. R. Pike, Proc. R. Soc. London, Ser. A 383, 15 (1982).
21. C. W. Groetsch, The Theory of Tikhonov Regularisation for Fredholm Equations of the First Kind (Pitman, London, 1984).
22. S. W. Proveneher, Comput. Phys. Commun. 27, 213 (1982).
23. The Computer Physics Communication (CPC) Program Library at the Queen's University of Belfast (http://www.cps.cs.qub.ac.uk).
24. J. Weese, Comput. Phys. Commun. 69, 99 (1991); ibid. 77, 429 (1993).
25. J. Weese, Comput. Phys. Commun. 69, 99 (1991); ibid. 77, 429 (1993).
26. A. Matulis (unpublished).
27. Z. Kancleris (unpublished).
28. K. Tittelbach-Helmrich, Meas. Sci. Technol. 4, 1323 (1993).
29. L. Dobaczewski, P. Kaczor, I. D. Hawkins, and A. R. Peaker, J. Appl. Phys. 76, 194 (1994).
30. J. W. Chen and A. G. Milnes, in Annual Review of Material Science, edited by R. A. Huggins, R. H. Bube, and D. A. Vermilyea (Annual Reviews, Palo Alto. 1980), Vol. 10, p. 157.
31. A. G. Milnes, in Advances in Electronics and Electron Physics, edited by P. W. Hawkes (Academic, Orlando, 1983), Vol. 61, p. 63.
32. G. M. Martin, A. Mitonneau, and A. Mircea, Electron. Lett. 13, 191 (1977).
33. A. Mitonneau, G. M. Martin, and A. Mircea, Electron. Lett. 13, 666 (1977).
34. N. M. Johnson, C. Doland, F. Ponce, J. Walker, and G. Anderson, Physica B 170, 3 (1991).
35. Hydrogen in Silicon, Semiconductors and Semimetals, Vol. 34, edited by J. I. Pankove and N. M. Johnson (Academic, San Diego, 1991).
36. E. Ö. Sveinjbörnsson and O. Engström, Phys. Rev. B 52, 4884 (1995).
37. J. A. Davidson and J. H. Evans, Semicond. Sci. Technol. 11, 1704 (1996).
38. A. Resende, J. Goss, P. R. Briddon, S. Öberg, and R. Jones, Mater. Sci. Forum 258-263, 295 (1997).
39. P. Deixler et al., Appl. Phys. Lett. 73, 3126 (1998).
40. R. H. Wu and A. R. Peaker, Solid-State Electron. 25, 643 (1982).
41. S. D. Brotherton and J. Bicknell, J. Appl. Phys. 49, 667 (1978).
42. A. Mesli, E. Courcelle, T. Zundel, and P. Siffert, Phys. Rev. B 36, 8049 (1987).
43. D. V. Lang, H. C. Grimmeiss, E. Meijer and M. Jaros, Phys. Rev. B 22, 3917 (1980).
44. B. Bech Nielsen, P. Johannesen, P. Stallinga, K. Bonde Nielsen, and J. R. Byberg, Phys. Rev. Lett. 79, 1507 (1997).
45. P. Stallinga, P. Johannesen, S. Herstrøm, K. Bonde Nielsen, B. Bech Nielsen, and J. R. Byberg, Phys. Rev. B 58, 3842 (1998).
46. K. Bonde Nielsen, L. Dobaczewski, K. Gosciński, R. Bendesen, O. Andersen, and B. Bech Nielsen, Physica B 273-274, 167 (1999).
47. O. Andersen, Ph. D. thesis, University of Manchester Institute of Science and Technology, Manchester, UK, 2003.
48. L. Dobaczewski, K. Bonde Nielsen, A. Mesli, and A. Nylandsted Larsen (unpublished).
49. O. Andersen, A. R. Peaker, L. Dobaczewski, K. Bonde Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg, Phys. Rev. B 66, 235205 (2002).
50. V. P. Markevich, A. R. Peaker, S. B. Lastovskii, L. I. Murin, and J. L. Lindström, J. Phys.: Condens. Matter 15, S2779 (2003).
51. B. Hamilton, A. R. Peaker, and D. R. Wight, J. Appl. Phys. 50, 6373 (1979).
52. R. Brunwin, B. Hamilton, P. Jordan, and A. R. Peaker, Electron. Lett. 15, 349 (1979).
53. P. Deixler (private communication).
54. M. A. Gad and J. H. Evans-Freeman, J. Appl. Phys. 92, 5252 (2002).
55. Y. Shreter, J. H. Evans, B. Hamilton, A. R. Peaker, C. Hill, D. R. Boys, C. D. Meekison, and G. R. Booker, Appl. Surf. Sci. 63, 227 (1993).
56. S. Solmi, M. Bersani, M. Sbetti, J. Lundsgaard Hansen, and A. Nylandsted Larsen, J. Appl. Phys. 88, 4547 (2000).
57. N. Abdelgader and J. H. Evans-Freeman, J. Appl. Phys. 93, 5118 (2003).
58. E. Anastassakis and M. Cardona, Semicond. Semimetals 55, 117 (1998).
59. A. Nylandsted Larsen, Mater. Sci. Forum 258-263, 83 (1997).
60. K. Gościński, L. Dobaczewski, K. Bonde Nielsen, and A. Nylandsted Larsen (unpublished).
61. K. Gościński, L. Dobaczewski, K. Bonde Nielsen, A. Nylandsted Larsen, and A. R. Peaker. Phys. Rev. B 63, 235309 (2001).
62. G. A. Samara and C. E. Barnes, Phys. Rev. B 35, 7575 (1987).
63. J. F. Nye, Physical Properties of Crystals, Their Representation by Tensor and Matrices (Clarendon, Oxford, 1957).
64. L. Dobaczewski, A. Mesli, K. Bonde Nielsen, and A. Nylandsted Larsen (unpublished).
65. G. E. Jellison, J. Appl. Phys. 53, 5715 (1982).
66. L. W. Song, X. D. Zhan, B. W. Benson, and G. D. Watkins, Phys. Rev. B 42, 5765 (1990).
67. T. P. Leervad Pedersen, A. Nylandsted Larsen. and A. Mesli, Appl. Phys. Lett. 75, 4085 (1990).
68. J. Frenkel, Phys. Rev. 54, 647 (1938).
69. J. L. Hartke, J. Appl. Phys. 39, 4871 (1968).
70. P. A. Martin, B. G. Streetman, and K. Hess, J. Appl. Phys. 52, 7409 (1981).
71. S. D. Ganichev, E. Ziemann, W. Prettl, I. N. Yassievich, A. A. Istratov, and E. R. Weber, Phys. Rev. B 61, 10361 (2000).
72. I. Izpura, E. Munoz, F. Garcia, E. Calleja, A. L. Powell, P. I. Rockett, C. C. Button, and J. S. Roberts, Appl. Phys. Lett. 58, 735 (1991).
73. S. Makram-Ebeid and M. Lannoo, Phys. Rev. Lett. 48, 1281 (1982); Phys. Rev. B 25, 6406 (1982).
74. S. Makram-Ebeid and M. Lannoo, Phys. Rev. Lett. 48, 1281 (1982); Phys. Rev. B 25, 6406 (1982).
75. R. D. Harris, J. L. Newton, and G. D. Watkins, Phys. Rev. B 36, 1094 (1987).
76. F. D. Auret and L. Dobaczewski (unpublished).
77. F. D. Auret, R. M. Erasmus, S. A. Goodman, and W. E. Meyer, Phys. Rev. B 51, 17521 (1995).
78. W. E. Meyer, F. D. Auret, and S. A. Goodman, Jpn. J. Appl. Phys., Part 2 35, L1 (1996).
79. J. Lagowski, D. G. Lin, H. C. Gatos, J. M. Parsey, Jr., and M. Kaminska, Appl. Phys. Lett. 45, 89 (1984).
80. L. Dobaczewski, Mater. Sci. Forum 38-41, 113 (1988).
81. L. Dobaczewski, K. Bonde Nielsen, N. Zangenberg, B. Bech Nielsen, A. R. Peaker, and V. Markevich, Phys. Rev. B 70, 079901 (2004).
82. K. Bonde Nielsen and L. Dobaczewski, Mater. Sci. Forum 258-263, 331 (1997).
83. J. A. van Vechten and C. D. Thurmond, Phys. Rev. B 14, 3539 (1976).
84. O. Engström and A. Aim, Solid-State Electron. 21, 1571 (1978).
85. A. K. Ramdas and S. Rodrigues, Semicond. Semimetals 36, 137 (1992).
86. A. A. Kaplyanskii, Opt. Spectrosc. 16, 329 (1964).
87. G. D. Watkins and J. W. Corbett, Phys. Rev. 121, 1001 (1961).
88. J. W. Corbett, G. D. Watkins, R. M. Chernko, and R. S. McDonald, Phys. Rev. 121, 1015 (1961).
89. G. A. Samara, Phys. Rev. B 36, 4841 (1987).
90. J. M. Meese, J. W. Farmer, and G. D. Lamp, Phys. Rev. Lett. 51, 1286 (1983).
91. L. Dobaczewski, O. Andersen, L. Rubaldo, K. Gościński, V. P. Markevich, A. R. Peaker, and K. Bonde Nielsen, Phys. Rev. B 67, 195204 (2003).
92. B. K. Ridley, J. Phys. C 11, 2323 (1978).
93. D. D. Nolte and E. E. Haller, Phys. Rev. B 38, 9857 (1988).
94. W. Jantsch, K. Wünstell, O. Kumagai, and P. Vogl, Phys. Rev. B 25, 5515 (1982).
95. G. A. Samara and C. E. Barnes, Phys. Rev. Lett. 57, 2069 (1986).
96. W. W. Keller, J. Appl. Phys. 55, 3471 (1984).
97. M. Li, J. Chen, Y. Yao, and G. Bai, J. Appl. Phys. 58, 2599 (1985).
98. W. Stöffler and J. Weber, Phys. Rev. B 33, 8892 (1986).
99. D. D. Nolte, W. Walukiewicz, and E. E. Haller, Phys. Rev. Lett. 59, 501 (1987).
100. M. J. Caldas, A. Fazzio, and A. Zunger, Appl. Phys. Lett. 45, 671 (1984).
101. J. M. Langer and H. Heinrich, Phys. Rev. Lett. 55, 1414 (1985).
102. C. G. Van de Walle and R. M. Martin, Phys. Rev. B 35, 8154 (1987).
103. M. Hamera, W. Walukiewicz, D. D. Nolte, and E. E. Haller, Phys. Rev. B 39, 10114 (1989).
104. D. D. Nolte, W. Walukiewicz, and E. E. Haller, Phys. Rev. B 36, 9374 (1987).
105. D. E. Bliss, D. D. Nolte, W. Walukiewicz, and E. E. Haller, Appl. Phys. Lett. 56, 1143 (1990).
106. L. Dobaczewski and A. Sienkiewicz, Acta Phys. Pol. A 71, 341 (1987).
107. P. Dreszner and M. Baj, Acta Phys. Pol. A 73, 219 (1987).
108. H. Hasagawa, Phys. Rev. 129, 1029 (1963).
109. I. Balslev, Phys. Rev. 143, 636 (1966).
110. L. L. Laude, F. H. Pollak, and M. Cardona, Phys. Rev. B 3, 2623 (1971).
111. X.-C. Yao, J. X. Mou, and G.-G. Qin, Phys. Rev. B 35, 5734 (1987).
112. J.-X. Mou, X.-C. Yao, and G.-G. Qin, Mater. Sci. Forum 10-12, 481 (1986).
113. P. M. Henry, J. W. Farmer, and J. M. Meese, Appl. Phys. Lett. 45, 454 (1984).
114. L. C. Kimerling, in Oxygen, Carbon, Hydrogen, and Nitrogen in Crystalline Silicon, edited by J. C. Mikkelsen, Jr., S. J. Pearton, J. W. Corbett, and J. C. Pennycook (Materials Research Society, Pittsburgh, 1986), p. 83.
115. M. Slavola, Physica B & C 146, 187 (1987).
116. P. Wagner, H. Gollschalk, J. Trombetla. and G. D. Watkins, J. Appl. Phys. 61, 346 (1987).
117. M. Slavola, in Early Stages of Oxygen Precipitation in Silicon, Advanced Studies Institute, Series C: Mathematical and Physical Sciences, NATO edited by R. Jones (Kluwer Academic Publishers, Dordrechi, 1996) Vol. 17, p. 223.
118. S. J. Hartnelt and D. W. Palmer, Mater. Sci. Forum 258-263, 1027 (1997).
119. D. Pons, P. M. Mooney, and J. C. Bourgoin, J. Appl. Phys. 51, 2038 (1980); D. Stievenard, X. Boddaert, J. C. Bourgoin, and H. J. von Bardeleben. Phys. Rev. B 41, 5271 (1990).
120. D. Pons, P. M. Mooney, and J. C. Bourgoin, J. Appl. Phys. 51, 2038 (1980); D. Stievenard, X. Boddaert, J. C. Bourgoin, and H. J. von Bardeleben. Phys. Rev. B 41, 5271 (1990).
121. S. Yang and C. D. Lamp, Phys. Rev. B 49, 1690 (1994).
122. B. Holm, K. Bonde Nielsen, and B. Bech Nielson, Phys. Rev. Lett. 66, 2360 (1991).
123. Y. V. Gorelkinskii and N. N. Nevinnyi, Sov. Tech. Phys. Lett. 13, 45 (1987); Physica B 170, 155 (1991).
124. Y. V. Gorelkinskii and N. N. Nevinnyi, Sov. Tech. Phys. Lett. 13, 45 (1987); Physica B 170, 155 (1991).
125. B. Bech Nielsen, K. Bonde Nielsen, and J. R. Byberg, Mater. Sci. Forum 143-147, 909 (1994).
126. K. Bonde Nielsen, B. Bech Nielsen, J. Hansen, E. Andersen, and J. U. Andersen, Phys. Rev. B 60, 1716 (1999).
127. K. Bonde Nielsen, L. Dobaczewski, S. Søgård, and B. Bech Nielsen, Physica B 308-310, 134 (2001); Phys. Rev. B 65, 075205 (2002).
128. K. Bonde Nielsen, L. Dobaczewski, S. Søgård, and B. Bech Nielsen, Physica B 308-310, 134 (2001); Phys. Rev. B 65, 075205 (2002).
129. C. Herring, N. M. Johnson, and C. G. Van de Walle, Phys. Rev. B 64, 125209 (2001).
130. A. Endrös, Phys. Rev. Lett. 63, 70 (1989).
131. Y. Kamuira, M. Yoneta, Y. Nishiyama, and F. Hashimoto, J. Appl. Phys. 72, 3394 (1992).
132. Y. Kamuira, N. Ishiga, and Y. Yamashita, Jpn. J. Appl. Phys., Part 1 36, L1419 (1997).
133. K. Fukuda, Y. Kamiura, and Y. Yamashita, Physica B 273-274, 184 (1999).
134. Y. Kamiura, K. Fukuda, Y. Yamashita, and T. Ishiyama, Phys. Rev. B 65, 113205 (2002).
135. O. Andersen, L. Dobaczewski, A. R. Peaker, K. Bonde Nielsen, B. Hourahine, R. Jones, P. R. Briddon, and S. Öberg, Physica B 308-310, 139 (2001).
136. J. Coutinho, O. Andersen, L. Dobaczewski, K. Bonde Nielsen, A. R. Peaker, R. Jones, S. Öberg, and P. Briddon, Phys. Rev. B 68, 184106 (2003).
137. P. Johannesen, B. Bech Nielsen, and J. R. Byberg, Phys. Rev. B 61, 4659 (2000).
138. J. Coutinho, R. Jones, P. Briddon, and S. Öberg, Phys. Rev. B 62, 10824 (2000).
139. L. Dobaczewski, K. Bonde Nielsen, O. Andersen, L. Rubaldo, K. Gościński, and A. R. Peaker, in Proceedings of the 25th Conference on the Physics of Semiconductors, edited by N. Miura and T. Ando (Springer Proceedings in Physics, New York, 2001), p. 1427.
140. G. D. Watkins and J. W. Corbett, Phys. Rev. 138, A543 (1965).
141. M. Stavola and L. C. Kimerling, J. Appl. Phys. 54, 3897 (1983).
142. L. Dobaczewski, K. Gościński, Z. R. Zykiewicz, K. Bonde Nielsen, L. Rubaldo, O. Andersen, and A. R. Peaker, Phys. Rev. B 65, 113203 (2002).
143. See the review article, P. M. Mooney, J. Appl. Phys. 67, R1 (1990).
144. L. Dobaczewski, P. Kaczor, M. Missous, A. R. Peaker, and Z. R. Zytkiewicz, Phys. Rev. Lett. 68, 2508 (1992).
145. L. Dobaczewski, P. Kaczor, M. Missous, A. R. Peaker, and Z. R. Zytkiewicz, J. Appl. Phys. 78, 2468 (1995).
146. D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988); Phys. Rev. B 39, 10063 (1989).
147. D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988); Phys. Rev. B 39, 10063 (1989).
148. L. Dobaczewski, K. Gościnski, K. Bonde Nielsen, A. Nylandsted Larsen, J. Lundsgaard Hansen, and A. R. Peaker, Phys. Rev. Lett. 83, 4582 (1999).
149. G. D. Watkins, M. Kleverman, A. Thilderkvist, and H. G. Grimmeiss, Phys. Rev. Lett. 67, 1149 (1991).
150. F. G. Anderson, R. F. Milligan, and G. D. Watkins, Phys. Rev. B 45, 3279 (1992).
151. F. Nikolajsen, P. Kringhøj, and A. Nylandsted Larsen, Appl. Phys. Lett. 69, 1743 (1996).
152. A. Mesli and A. Nylandsted Larsen, Mater. Res. Soc. Symp. Proc. 510, 89 (1989).
153. K. Bonde Nielsen, L. Dobaczewski, A. R. Peaker, and N. V. Abrosimov, Phys. Rev. B 68, 045204 (2003).
154. K. Irmsher, H. Klose, and K. Maass, J. Phys. C 17, 6317 (1984).
155. C. Hurtes, M. Boulou, A. Mitonneau, and D. Bois, Appl. Phys. Lett. 32, 821 (1978).