Defects in semiconductors: Some fatal, some vital

Science

Volumn 281, Issue 5379, 1998, Pages 945-950

  Queisser, Hans J ^a,b   Haller, Eugene E ^a  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRONICS; PRIORITY JOURNAL; REVIEW; SEMICONDUCTOR; TECHNOLOGY;

EID: 0032516662     PISSN: 00368075     EISSN: None     Source Type: Journal    
DOI: 10.1126/science.281.5379.945     Document Type: Review

References (45)

1. For recent summaries, see Mat. Sci. Forum 258-63 (1997); Proceedings of the Eighth International Conference on Shallow-Level Centers in Semiconductors, Montpellier, France, 27 to 30 July 1998 [Phys. Status Solidi (B), in press].
2. For recent summaries, see Mat. Sci. Forum 258-63 (1997); Proceedings of the Eighth International Conference on Shallow-Level Centers in Semiconductors, Montpellier, France, 27 to 30 July 1998 [Phys. Status Solidi (B), in press].
3. For recent summaries, see Mat. Sci. Forum 258-63 (1997); Proceedings of the Eighth International Conference on Shallow-Level Centers in Semiconductors, Montpellier, France, 27 to 30 July 1998 [Phys. Status Solidi (B), in press].
4. H. J. Queisser, Mat. Res. Soc. Symp. Proc. in press.
5. C. Wetzel et al., Phys. Rev. Lett. 78, 3923 (1997).
6. A. K. Ramdas and S. Rodriguez, Rep. Progr. Phys. 44, 1297 (1981).
7. S. T. Pantelides, Ed., Deep Centers in Semiconductors: A State-of-the-Art Approach (Gordon & Breach, Lausanne, Switzerland, ed. 2, 1992); A. M. Stoneham, Theory of Defects in Solids (Clarendon, Oxford, 1975).
8. S. T. Pantelides, Ed., Deep Centers in Semiconductors: A State-of-the-Art Approach (Gordon & Breach, Lausanne, Switzerland, ed. 2, 1992); A. M. Stoneham, Theory of Defects in Solids (Clarendon, Oxford, 1975).
9. W. Shockley, IEEE Trans. Electron. Devices ED-23, 611 (1976).
10. S. Nakamura, Science 281, 956 (1998).
11. J. Neugebauer and C. Van de Walle, Phys. Rev. B 50, 8067 (1994).
12. H. R. Huff et al., Jpn. J. Appl. Phys. (Part 1) 37, 1210 (1998).
13. J. P. Hirth and J. Lothe, Theory of Dislocations (Wiley, New York, 1982).
14. H. J. Queisser, Mat. Res. Soc. Symp. Proc. 14, 323 (1983).
15. S. Nakamura and G. Fasol, The Blue Laser Diode (Springer, Heidelberg, 1997).
16. A. R. Smith, R. M. Feenstra, D. W. Greve, J. Neugebauer, J. E. Northrup, Phys. Rev. Lett. 79, 3934 (1997).
17. K. Graff, Metal Impurities in Silicon (Springer, Heidelberg, 1995).
18. G. Obermeier, J. Hage, D. Huber, J. Appl. Phys. 82, 595 (1997).
19. For a recent survey, see D. Gilles and A. Ohsawa, in Semiconductor Silicon 1998, H. R. Huff, U. Gösele, H. Tsuya, Eds. (Electrochemical Society, Pennington, NJ, 1998), vol. 98-1, p. 1047.
20. E. E. Haller and F. S. Goulding, Handbook on Semiconductors, C. Hilsum, Ed. (Elsevier, New York, ed. 2, 1993), vol. 4, pp. 937-963.
21. E. E. Haller, Festkörperprobleme: Advances in Solid State Physics XXVI, P. Grosse, Ed. (Vieweg, Braunschweig, Germany, 1986), pp. 203-229.
22. J. T. Walton, R. H. Pehl, Y. K. Wong, C. P. Cork, IEEE Trans. Nucl. Sci. 31 (no. 1), 331 (1984).
23. E. E. Haller, Phys. Rev. Lett. 40, 584 (1978).
24. _, G. S. Hubbard, W. L. Hansen, IEEE Trans. Nucl. Sci. 24 (no. 1), 48 (1977).
25. See articles in J. Pankove and N. Johnson, Eds., Hydrogen in Semiconductors: Semiconductors and Semimetals (Academic Press, Orlando, FL, 1991), vol. 34.
26. S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins, Phys. Rev. B 51, 9612 (1995); J.-U. Sachse, E. O. Sveinbjornsson, W. Jost, J. Weber, H. Lemke, ibid. 55, 16176 (1997).
27. S. J. Uftring, M. Stavola, P. M. Williams, G. D. Watkins, Phys. Rev. B 51, 9612 (1995); J.-U. Sachse, E. O. Sveinbjornsson, W. Jost, J. Weber, H. Lemke, ibid. 55, 16176 (1997).
28. I. Pomeranchuk, J. Phys. (Moscow) 6, 237 (1942).
29. T. H. Geballe and G. Hull, Phys. Rev. 110, 773 (1958).
30. E. E. Haller, Appl. Phys. Rev. in J. Appl. Phys. 77, 2857 (1995).
31. A. J. Mayur et al., Phys. Rev. B 49, 16293 (1994).
32. H. Bracht, E. E. Haller, R. Clark-Phelps, Phys. Rev. Lett., 81, 393 (1998).
33. P. A. Stolk, D. J. Eaglesham, H.-J. Gossmann, J. M. Poate, Appl. Phys. Lett. 66, 1370 (1995).
34. S. P. Murarka, Silicides for VLSI Applications (Academic Press, Orlando, FL, 1983).
35. W. Walukiewicz, Appl. Phys. Lett. 54, 2094 (1989).
36. For reviews, see, P. M. Mooney, Semicond. Sci. Technol. 6, B1 (1991); Appl. Phys. Rev. in J. Appl. Phys. 67, R1 (1990).
37. For reviews, see, P. M. Mooney, Semicond. Sci. Technol. 6, B1 (1991); Appl. Phys. Rev. in J. Appl. Phys. 67, R1 (1990).
38. D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39, 635 (1977).
39. M. Mizuta et al., Jpn. J. Appl. Phys. 24, L143 (1985).
40. D. J. Chadi and K. J. Chang, Phys. Rev. Lett. 61, 873 (1988).
41. G. D. Watkins, Mat. Sci. Forum 38-41, 39 (1989).
42. J. Wolk et al., Phys. Rev. Lett. 66, 774 (1991).
43. J. Dabrowski and M. Scheffler, ibid. 60, 2183 (1988).
44. D. J. Chadi and K. J. Chang, ibid., p. 2187.
45. We gratefully acknowledge suggestions and help from A. R. Smith, R. M. Feenstra, and D. W. Greve of Carnegie Mellon University for providing us with Fig. 3 before publication; C. Van de Walle of Xerox, Palo Alto Research Center, for discussions and permission to reproduce Fig. 2; and J. Weber of the Max-Planck-Institut, Stuttgart, Germany, and M. Stavola of Lehigh University for reproducing Fig. 5. W. L. Hansen and W. Walukiewicz at Lawrence Berkeley National Laboratory (LBNL) have contributed enlightening discussions. H.J.Q. is grateful for the hospitality extended to him at the University of California at Berkeley and at LBNL.