Si-H stretch modes of hydrogen - Vacancy defects in silicon

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 259-263

  Bech Nielsen, B ^a   Hoffmann, L ^a   Budde, M ^a  

^a AARHUS UNIVERSITY   (Denmark)

Author keywords

Hydrogen; Silicon

Indexed keywords

EID: 0002800045     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01260-5     Document Type: Article

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16. Note that cubic terms do not contribute to first-order perturbation theory, in contrast to the quartic terms. This is the reason why quartic terms need to be considered.
17. 2, deduced from the fits, increase approximately linearly as a function of the number of hydrogen isotopes in the vacancy.