High Power Lateral Silicon Carbide Photoconductive Semiconductor Switches and Investigation of Degradation Mechanisms

IEEE Transactions on Plasma Science

Volumn 43, Issue 6, 2015, Pages 2021-2031

  Mauch, Daniel ^a   Sullivan, William ^a   Bullick, Alan ^a   Neuber, Andreas ^a   Dickens, James ^a  

^a Texas Tech University   (United States)

Author keywords

Photoconducting devices; photoconducting materials; photoconductivity; power semiconductor switches; pulse generation; pulsed power system switches; semiconductor switches; silicon carbide.

Indexed keywords

CRACKS; DEGRADATION; ELECTRIC FIELDS; ELECTRIC POWER SYSTEMS; ELECTRIC SWITCHES; FAILURE (MECHANICAL); LEAKAGE CURRENTS; OUTAGES; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTING MATERIALS; PHOTOCONDUCTIVITY; POWER ELECTRONICS; PULSE GENERATORS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SEMICONDUCTOR SWITCHES; SILICON CARBIDE;

DEGRADATION MECHANISM; HIGH POWER SWITCHING; HIGH-PURITY SEMI-INSULATING 4H-SIC; ON-STATE RESISTANCE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; POWER SEMICONDUCTOR SWITCHES; PULSE GENERATION; PULSED POWER SYSTEM SWITCHES;

PHOTOCONDUCTIVE SWITCHES;

EID: 85027921289     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2015.2424154     Document Type: Article

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