4H-SiC photoconductive switching devices for use in high-power applications

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3107-3109

  Dogan S ^a,e   Teke, A ^a,f   Huang, D ^a   Morkoc H ^a   Roberts, C B ^b   Parish, J ^c   Ganguly, B ^c   Smith, M ^d   Myers, R E ^d   Saddow, S E ^d  

^a Virginia Commonwealth University   (United States)

^b Limited Liability Corporation   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

^d UNIVERSITY OF SOUTH FLORIDA   (United States)

^e ATATÜRK UNIVERSITY   (Turkey)

^f BALIKESIR UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ETCHING; MORPHOLOGY; PHOTOCONDUCTING DEVICES; PHOTOCURRENTS; SILICON CARBIDE;

PHOTOCONDUCTIVE SWITCHING DEVICES;

SEMICONDUCTOR SWITCHES;

EID: 0038528159     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1571667     Document Type: Article

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