15 KV IGBTS in 4H-SiC

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 954-957

  Ryu, S ^a   Capell, C ^a   Jonas, C ^a   O'Loughlin, M ^a   Cheng, L ^a   Lam, K ^a   Burk, A ^a   Richmond, J ^a   Clayton, J ^a   Hefner, A ^b   Grider, D ^a   Agarwal, A ^a   Palmour, J ^a  

^a Arkansas Power Electronics International Inc   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

High voltage; IGBT

Indexed keywords

BIAS VOLTAGE; BUFFER LAYERS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

ACTIVE AREA; BLOCKING VOLTAGE; BUFFER DESIGN; HIGH VOLTAGE; LATEST DEVELOPMENT; SPECIFIC-ON RESISTANCE; TEMPERATURE DIFFERENTIAL; ULTRA HIGH VOLTAGE;

SILICON CARBIDE;

EID: 84874088208     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.954     Document Type: Conference Paper

References (3)

1. S. Ryu et al, Materials Science Forums Vols. 717-720 (2012), pp.1135-1138
2. M. Das et al., Proceedings of ISPSD 2008, Orlando, FL, May 18-22, pp.253-255
3. S. Ryu et al, Proceedings of ISPSD 2012, 3 - 7 June 2012, Bruges, Belgium, pp. 257-260