Shallow incorporation of nitrogen in HPSI 4H-SiC through the laser enhanced diffusion process

Materials Science Forum

Volumn 717-720, Issue , 2012, Pages 813-816

  Sullivan III, W ^a   Hettler, C ^a   Dickens, J ^a  

^a Texas Tech University   (United States)

Author keywords

Laser enhanced diffusion; N type doping; Silicon carbide; Thermal model

Indexed keywords

DIFFUSION; SEMICONDUCTOR DOPING; SILICON CARBIDE; THERMOGRAPHY (TEMPERATURE MEASUREMENT); ULTRAVIOLET LASERS;

HIGH-PURITY SEMI-INSULATING; LASER ENHANCED DIFFUSIONS; N-TYPE DOPING; NONLINEAR TEMPERATURE; NONLINEAR THERMAL MODELING; SURFACE CONCENTRATION; THERMAL MODEL; VOLUMETRIC HEAT SOURCE;

PULSED LASERS;

EID: 84861369928     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.717-720.813     Document Type: Conference Paper

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