High power operation of a nitrogen doped, vanadium compensated, 6H-SiC extrinsic photoconductive switch

Applied Physics Letters

Volumn 104, Issue 17, 2014, Pages

  Sullivan, J S ^a  

^a LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); PHOTOCONDUCTIVE SWITCHES; SEMICONDUCTING GALLIUM ARSENIDE; SILICON CARBIDE; SWITCHES;

HIGH-POWER OPERATION; MATERIAL RESISTIVITY; NITROGEN DOPANT; NITROGEN-DOPED; OPTICAL INTENSITIES; ORDERS OF MAGNITUDE; PHOTOCONDUCTIVE SWITCHING; SWITCH VOLTAGE;

VANADIUM;

EID: 84899839270     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4875258     Document Type: Article

References (7)

1. J. S. Sullivan and J. R. Stanley, IEEE Trans. Dielectr. Electr. Insul. 14, 980 (2007). 10.1109/TDEI.2007.4286537
2. J. S. Sullivan and J. R. Stanley, IEEE Trans. Plasma Sci. 36, 2528 (2008). 10.1109/TPS.2008.2002147
3. F. La Via, F. Roccaforte, A. Mahktari, V. Raineri, P. Musumeci, and L. Calcagno, Microelectron. Eng. 60, 269 (2002). 10.1016/S0167-9317(01)00604-9
4. J. S. Sullivan, Ph.D. dissertation (University of California, Davis, 2013).
5. R. L. Sutherland, Handbook of Nonlinear Optics, 2nd ed. (Marcel Dekker, New York, 2003), p. 582.
6. A. A. Borshch, M. S. Brodyn, and V. Y. Gayvoronski, Proc. SPIE 5024, 128 (2003). 10.1117/12.497191
7. 3M Electronic Materials, Flourinert Liquids for Electronic Manufacturing, 2003.