Deep level defects in electron-irradiated 4H SiC epitaxial layers

Journal of Applied Physics

Volumn 81, Issue 9, 1997, Pages 6155-6159

  Hemmingsson, C ^a   Son, N T ^a   Kordina, O ^a   Bergman, J P ^a   Janzen E ^a   Lindstrom J L ^b   Savage, S ^c   Nordell, N ^c  

^a LINKÖPING UNIVERSITY   (Sweden)

^b SWEDISH DEFENCE RESEARCH AGENCY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONIC DENSITY OF STATES; ELECTRONS; EPITAXIAL GROWTH; IONIZATION; IRRADIATION; SILICON CARBIDE; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

DEEP LEVEL DEFECTS; DOSE DEPENDENCE; EPITAXIAL LAYERS; TEMPERATURE DEPENDENCE; THERMAL EMISSION RATES; THERMAL IONIZATION ENERGY;

CRYSTAL DEFECTS;

EID: 0031145826     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364397     Document Type: Article

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