High voltage, bulk GaN-based photoconductive switches for pulsed power applications

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8625, Issue , 2013, Pages

  Leach, J H ^a   Metzger, R ^a   Preble, E A ^a   Evans, K R ^a  

^a KYMA TECHNOLOGIES INC   (United States)

Author keywords

Bulk GaN; Extrinsic PCSS; High power microwave; Photoconductive semiconductor switch (PCSS); Pulsed power; Semiinsulating GaN

Indexed keywords

BULK GAN; EXTRINSIC PCSS; HIGH POWER MICROWAVES; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PULSED-POWER; SEMI-INSULATING GAN;

GALLIUM ALLOYS; GALLIUM NITRIDE; JITTER; PHOTOCONDUCTIVE SWITCHES;

MICROWAVE DEVICES;

EID: 84878744587     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.2005548     Document Type: Conference Paper

References (3)

1. Rosen, A. and Zutavern, [High-Power Optically Activated Solid-State Switches], Artech House (1994).
2. Sullivan, J.S. "Wide bandgap extrinsic photoconductive switches," Lawrence Livermore National Laboratory, Report #LLNL-TH-523591, January 20, 2012, https://e-reports-ext.llnl.gov/pdf/554209.pdf (accessed 11 January 2013).
3. Bube, R. [Photoelectronic Properties of Semiconductors], Cambridge University Press, Cambridge (1992).