Deep levels by proton and electron irradiation in 4H-SiC

Journal of Applied Physics

Volumn 98, Issue 5, 2005, Pages

  Castaldini, Antonio ^a   Cavallini, Anna ^a   Rigutti, Lorenzo ^a   Nava, Filippo ^b   Ferrero, Sergio ^c   Giorgis, Fabrizio ^c  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^c POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT COMPLEXES; EPILAYERS; IRRADIATION-INDUCED DEFECTS; PARTICLE ENERGIES;

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; ENTHALPY; PROTONS;

SILICON CARBIDE;

EID: 25144492837     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2014941     Document Type: Article

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