Annealing behavior between room temperature and 2000°C of deep level defects in electron-irradiated n-type 4H silicon carbide

Journal of Applied Physics

Volumn 98, Issue 4, 2005, Pages

  Alfieri, G ^a   Monakhov, E V ^a   Svensson, B G ^a   Linnarsson, M K ^b  

^a UNIVERSITY OF OSLO   (Norway)

^b ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

15-MEV ELECTRONS; CONDUCTION-BAND EDGE; DEEP LEVEL TRANSIENT SPECTROSCOPY (DLTS); IRRADIATION-INDUCED DEFECTS;

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; ELECTRONS; EPITAXIAL GROWTH;

SILICON CARBIDE;

EID: 25144431509     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2009816     Document Type: Article

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