Formation and role of graphite and nickel silicide in nickel based ohmic contacts to n -type silicon carbide

Journal of Applied Physics

Volumn 97, Issue 8, 2005, Pages

  Nikitina, I P ^a,c   Vassilevski, K V ^a   Wright, N G ^a   Horsfall, A B ^a   O'Neill, A G ^a   Johnson, C M ^b  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRANSPORT; GRAPHITE FILMS; GRAPHITE SILICIDE; NICKEL SILICIDE;

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; GRAPHITE; GRAPHITIZATION; NANOSTRUCTURED MATERIALS; NICKEL COMPOUNDS; OHMIC CONTACTS; PHASE COMPOSITION; RAMAN SPECTROSCOPY; THIN FILMS;

SILICON CARBIDE;

EID: 21544483536     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1872200     Document Type: Article

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