15 kV, large area (1 cm2), 4H-SiC p-type gate turn-off thyristors

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 978-981

  Cheng, Lin ^a   Agarwal, Anant K ^a   Capell, Craig ^a   O'Loughlin, Michael ^a   Lam, Khiem ^a   Zhang, Jon ^a   Richmond, Jim ^a   Burk, Al ^a   Palmour, John W ^a   Ogunniy, Aderinto A ^b   O'Brien, Heather K ^b   Scozzie, Charles J ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Carrier lifetime; Gate turn off thyristor; GTO; High injection current; High temperature; High voltage; Silicon carbide

Indexed keywords

CARRIER LIFETIME; THYRISTORS;

BLOCKING VOLTAGE; GATE TURN-OFF THYRISTORS; HIGH INJECTION; HIGH TEMPERATURE; HIGH VOLTAGE; HIGH VOLTAGE TESTS; ON-RESISTANCE; TEMPERATURE RANGE;

SILICON CARBIDE;

EID: 84874043945     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.978     Document Type: Conference Paper

References (5)

1. M. S. Chinthavali, L. M. Tolbert, and B. Ozpineci, IEEE Industry Applications Society Annual Meeting (IAS 2004), Oct 3-7, 2004, Seattle, Washington.
2. A. Agarwal et al., Mat. Sci. forum Vol. 645-648 (2010), pp. 1017-1020.
3. L. Cheng et al., Proceedings of International Conference on High Temperature Electronics (HiTEC 2012), Albuquerque, NM, USA, May 8-10, 2012.
4. T. Kimoto, et al., J. Appl. Phys., 108, 083721 (2010).
5. T. Hayashi et al., J. Appl. Phys., 109, 114502 (2011).