Effect of BCl3 in chlorine-based plasma on etching 4H-SiC for photoconductive semiconductor switch applications

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volumn 32, Issue 5, 2014, Pages

  Ekinci, Huseyin ^a   Kuryatkov, Vladimir V ^a   Mauch, Daniel L ^a   Dickens, James C ^a   Nikishin, Sergey A ^a  

^a Texas Tech University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE; CHLORINE COMPOUNDS; EPITAXIAL GROWTH; ETCHING; INDUCTIVELY COUPLED PLASMA; MORPHOLOGY; PHOTOCONDUCTIVE SWITCHES; PHOTOCONDUCTIVITY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SPECTRAL DENSITY; SURFACE MORPHOLOGY; WIDE BAND GAP SEMICONDUCTORS;

CHLORINE-BASED PLASMA; INDUCTIVELY COUPLED-PLASMA REACTIVE ION ETCHING; LASER ENHANCED DIFFUSIONS; LOW FREQUENCY RANGE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; ROOT MEAN SQUARE ROUGHNESS; SEMI-INSULATING SUBSTRATE; SURFACE HEIGHT FUNCTION;

BORON COMPOUNDS;

EID: 84929429315     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4892172     Document Type: Article

References (30)

1. M. Willander, M. Friesel, Q. Phil, and B. Straumal, Springer Handbook of Electronic and Photonic Materials (Springer, New York, 2007), pp. 537-563.
2. M. Levinshtein, S. Rumyantsev, and M. Shur, Properties of Advanced Semiconductor Materials (John Wiley & Sons, New York, 2001), pp. 93-148.
3. C. James, C. Hettler, and J. Dickens, IEEE Electron Device Lett. 58, 508 (2011). 10.1109/TED.2010.2089689
4. J. W. Bragg, W. Sullivan III, D. Mauch, A. Neuber, and J. Dickens, Rev. Sci. Instrum. 84, 54703 (2013). 10.1063/1.4804196
5. W. W. Sullivan III, C. Hettler, and J. Dickens, Mater. Sci. Forum 717-720, 813 (2012). 10.4028/www.scientific.net/MSF.717-720.813
6. J. Sugiura, W.-J. Lu, K. C. Cadien, and A, J. Steck, J. Vac. Sci. Technol., B 4, 349 (1986). 10.1116/1.583329
7. P. Leerungnawarat, D. C. Hays, H. Cho, S. J. Pearton, R. M. Strong, C.-M. Zetterling, and M. Ostling, J. Vac. Sci. Technol., B 17, 2050 (1999). 10.1116/1.590870
8. A. Tasaka et al., J. Vac. Sci. Technol., A 20, 1254 (2002). 10.1116/1.1481044
9. K. Xie, J. R. Flemish, J. H. Zhao, W. R. Buchwald, and L. Casas, Appl. Phys. Lett. 67, 368 (1995). 10.1063/1.114631
10. G. F. McLane and J. R. Flemish, Appl. Phys. Lett. 68, 3755 (1996). 10.1063/1.115996
11. F. A. Khan, L. Zhou, V. Kumar, and I. Adesida, J. Electrochem. Soc. 149, G420 (2002). 10.1149/1.1482059
12. L. Jiang, N. O. V. Plank, M. A. Blauw, R. Cheung, and E. van der Drift, J. Phys. D: Appl. Phys. 37, 1809 (2004). 10.1088/0022-3727/37/13/012
13. T. C. Lo and H. C. Huang, J. Vac. Sci. Technol., A 11, 286 (1993). 10.1116/1.578727
14. A. Tasaka, H. Yamada, T. Nonoyama, T. Kanatani, Y. Kotaka, T. Tojo, and M. Inaba, J. Vac. Sci. Technol., A 27, 1369 (2009). 10.1116/1.3222938
15. A. Kathalingam, M.-R. Kim, Y.-S. Chae, S. Sudhakar, T. Mahalingam, and J.-K. Rhee, Appl. Surf. Sci. 257, 3850 (2011). 10.1016/j.apsusc.2010.11.053
16. K. Zhu, V. Kuryatkov, B. Borisov, G. Kipshidze, S. A. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 81, 4688 (2002). 10.1063/1.1527986
17. K. Zhu, V. Kuryatkov, B. Borisov, J. Yun, G. Kipshidze, S. A. Nikishin, H. Temkin, D. Aurongzeb, and M. Holtz, J. Appl. Phys. 95, 4635 (2004). 10.1063/1.1688993
18. V. Kuryatkov, B. Borisov, J. Saxena, S. A. Nikishin, H. Temkin, S. Patibandla, L. Menon, and M. Holtz, J. Appl. Phys. 97, 073302 (2005). 10.1063/1.1866490
19. S. Nikishin, B. Borisov, V. Kuryatkov, A. Usikov, V. Dmitriev, and M. Holtz, Proc. SPIE 6121, 61210T (2006). 10.1117/12.657921
20. D. S. Rawal, B. K. Sehgal, R. Muralidharan, H. K. Malik, and A. Dasgupta, Vacuum 86, 1844 (2012). 10.1016/j.vacuum.2012.04.018
21. E. Meeks, P. Ho, A. Ting, and R. J. Buss, J. Vac. Sci. Technol., A 16, 2227 (1998). 10.1116/1.581332
22. W. W. Sullivan III, D. Mauch, A. Bullick, C. Hettler, A. Neuber, and J. Dickens, Rev. Sci. Instrum. 84, 034702 (2013). 10.1063/1.4794734
23. P. H. Yih, V. Saxena, and A. J. Steckl, Phys. Status Solidi B 202, 605 (1997). 10.1002/1521-3951(199707)202:1<605::AID-PSSB605>3.0.CO;2-Y
24. Y. Han, S. Xue, T. Wu, Z. Wu, W. Guo, Y. Luo, Z. Hao, and C. Sun, J. Vac. Sci. Technol., A 22, 407 (2004). 10.1116/1.1641054
25. J. Sun and J. Kosel, Microelectron. Eng. 98, 222 (2012). 10.1016/j.mee.2012.07.018
26. L. Chen, Y. Huang, J. Chen, Y. Sun, T. Li, D. G. Zhao, and H. M. Gong, Proc. SPIE 6621, 66211A (2008). 10.1117/12.790829
27. T. S. Kim, H. Y. Yang, S. S. Choi, T. S. Jeong, S. Kang, and K. H. Shim, J. Korean Phys. Soc. 56, 59 (2010). 10.3938/jkps.56.59
28. A. E. Lita and J. E. Sanchez, Phys. Rev. B 61, 7692 (2000). 10.1103/PhysRevB.61.7692
29. D. Aurongzeb, M. Holtz, and L. Menon, Appl. Phys. Lett. 89, 092501 (2006). 10.1063/1.2335977
30. M. A. Lampert and P. Mark, Current Injection in Solids (Academic, New York, 1970).