30 kV and 3 kA semi-insulating GaAs photoconductive semiconductor switch

Applied Physics Letters

Volumn 92, Issue 4, 2008, Pages

  Shi, Wei ^a   Tian, Liqiang ^a   Liu, Zheng ^a   Zhang, Linqing ^a   Zhang, Zhenzhen ^a   Zhou, Liangji ^b   Liu, Hongwei ^b   Xie, Weiping ^b  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b RESEARCH CENTER OF LASER FUSION   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; LASER PULSES; PHOTOCONDUCTIVITY; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRON-TRAPPING BREAKDOWN THEORY; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH (PCSS);

SEMICONDUCTOR SWITCHES;

EID: 38849146553     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2838743     Document Type: Article

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