Progress and prospect of the growth of wide-band-gap group III nitrides: Development of the growth method for single-crystal bulk GaN

Japanese Journal of Applied Physics

Volumn 52, Issue 5, 2013, Pages

  Amano, Hiroshi ^a   Usui, Akira ^b   Mori, Yusuke ^c   Yamaguchi, Masahito ^a   Honda, Yoshio ^a   Iwaya, Motoaki ^d   Tanigawa, Tomoyuki ^a   Sugiyama, Takayuki ^a   Sano, Tomohiro ^a   Kuwahara, Yosuke ^d   Makino, Takafumi ^d   Mishima, Akira ^d  

^a NAGOYA UNIVERSITY   (Japan)

^b FURUKAWA CO LTD   (Japan)

^c OSAKA UNIVERSITY   (Japan)

^d MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; HETEROJUNCTIONS; LIGHT EMITTING DIODES; PHOTOVOLTAIC CELLS; SAPPHIRE; SUBSTRATES; THIN FILMS;

BLUE LIGHT-EMITTING; BULK SUBSTRATES; CURRENT STATUS; GAN SUBSTRATE; GROUP III NITRIDES; GROWTH METHOD; III-V COMPOUND SEMICONDUCTOR; WIDE BAND GAP;

SEMICONDUCTOR GROWTH;

EID: 84880889754     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.050001     Document Type: Review

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