The effects of sub-contact nitrogen doping on silicon carbide photoconductive semiconductor switches

Proceedings of the 2012 IEEE International Power Modulator and High Voltage Conference, IPMHVC 2012

Volumn , Issue , 2012, Pages 77-79

  Sullivan, William ^a   Hettler, Cameron ^a   Dickens, James ^a  

^a Texas Tech University   (United States)

Author keywords

High voltage; Ohmic contact; Photoconductive semiconductor switch; Silicon carbide

Indexed keywords

EFFICIENT ELECTRON INJECTION; HIGH VOLTAGE; HIGH-PURITY SEMI-INSULATING 4H-SIC; LASER ENHANCED DIFFUSIONS; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; SCHOTTKY BARRIER HEIGHTS; SILICON CARBIDES (SIC); WIDE-BAND-GAP SEMICONDUCTOR;

ELECTRICITY; NITROGEN; OHMIC CONTACTS; PHOTOCONDUCTIVE SWITCHES; PULSED LASERS; SEMICONDUCTOR LASERS; SILICON CARBIDE;

SEMICONDUCTOR DOPING;

EID: 84879904496     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPMHVC.2012.6518684     Document Type: Conference Paper

References (5)

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