ON-state characteristics of a high-power photoconductive switch fabricated from compensated 6-H silicon carbide

IEEE Transactions on Plasma Science

Volumn 36 PART 2, Issue 1, 2008, Pages 287-292

  Kelkar, Kapil S ^a   Islam, Naz E ^a   Kirawanich, Phumin ^a   Fessler, Christopher M ^a   Nunnally, William C ^a  

^a UNIVERSITY OF MISSOURI   (United States)

Author keywords

High power microwaves; Photoconductive semiconductor switches (PCSSs); Silicon carbide (SiC)

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; MICROWAVES; OPTICAL SWITCHES; PHOTOCONDUCTING DEVICES; PHOTONS; SEMICONDUCTING SILICON COMPOUNDS;

HIGH POWER MICROWAVES; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES (PCSSS); PHOTON ENERGY;

SILICON CARBIDE;

EID: 40549113361     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2007.914191     Document Type: Article

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