SCOPUS 정보 검색 플랫폼

Volumn 14, Issue 4, 2007, Pages 980-985

6H-SiC photoconductive switches triggered at below bandgap wavelengths

Author keywords

Light triggered switches; Photoconducting devices; Photoconductivity; Semiconductor switches; Silicon carbide

Indexed keywords

ELECTRIC FIELD EFFECTS; ENERGY GAP; PHOTOCONDUCTIVITY; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SWITCHING; THERMAL CONDUCTIVITY;

ELECTRIC FIELD STRENGTH; HIGH ELECTRON SATURATION VELOCITY; LIGHT TRIGGERED SWITCHES;

PHOTOCONDUCTING DEVICES;

EID: 34547739524 PISSN: 10709878 EISSN: None Source Type: Journal
DOI: 10.1109/TDEI.2007.4286537 Document Type: Conference Paper

Times cited : (45)

References (7)

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2
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3
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4
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- Preparation of semi-insulating Silicon Carbide by Vanadium doping during PVT bulk crystal growth
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5
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- Photoconductive and photovoltaic response of high-dark-resistivity 6H-SiC devices
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.