High power photoconductive switches of 4H SiC with Si3N4 passivation and n+ -GaN subcontact

Superlattices and Microstructures

Volumn 41, Issue 4, 2007, Pages 264-270

  Zhu, K ^a   Johnstone, D ^a   Leach, J ^a   Fu, Y ^a   Morkoc H ^a   Li, G ^b   Ganguly, B ^c  

^a Virginia Commonwealth University   (United States)

^b AIR FORCE INSTITUTE OF TECHNOLOGY   (United States)

^c AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; EPITAXIAL LAYERS; GALLIUM NITRIDE; OHMIC CONTACTS; PASSIVATION; PHOTOCURRENTS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON NITRIDE;

PASSIVATION LAYERS; PHOTOCONDUCTIVE SWITCHES; SWITCHING DEVICES;

SEMICONDUCTOR SWITCHES;

EID: 34248630785     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2007.02.002     Document Type: Article

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