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Applied Physics Letters

Volumn 79, Issue 24, 2001, Pages 3950-3952

Annealing behavior of vacancies and Z1/2 levels in electron-irradiated 4H-SiC studied by positron annihilation and deep-level transient spectroscopy

(9) Kawasuso, A a Redmann, F a Krause Rehberg, R a Weidner, M b Frank, T b Pensl, G b Sperr, P c Triftshauser W c Itoh, H d

a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

c BUNDESWEHR UNIVERSITY MUNICH (Germany)

d JAPAN ATOMIC ENERGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035842780 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1426259 Document Type: Article

Times cited : (43)

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