Deep level transient spectroscopy on as-grown and electron-irradiated p -type 4H-SiC epilayers

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Danno, Katsunori ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION (PROCESS); DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON IRRADIATION; HEAT TREATMENT; HYDROGEN; SILICON CARBIDE;

DEEP LEVELS; DEFECT COMPLEXES;

EPILAYERS;

EID: 34249939793     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2730569     Document Type: Article

References (26)

1. H. Matsunami and T. Kimoto, Mater. Sci. Eng., R. 20, 125 (1997).
2. A. Agarwal, M. Das, S. Krishnaswami, J. Palmour, J. Richmond, and S. -H. Ryu, Mater. Res. Soc. Symp. Proc. 815, 243 (2004).
3. A. Ellison, B. Magnusson, N. T. Son, L. Storasta, and E. Janźn, Mater. Sci. Forum 433-436, 33 (2003).
4. St. G. Müller, Mater. Sci. Forum 433-436, 39 (2003).
5. B. J. Baliga and E. Sun, IEEE Trans. Electron Devices 24, 685 (1977).
6. R. O. Carlson, Y. S. Sun, and H. B. Assalit, IEEE Trans. Electron Devices 24, 1103 (1977).
7. C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janźn, J. L. Lindström, S. Savage, and N. Nordell, J. Appl. Phys. 0021-8979 10.1063/1.364397 81, 6155 (1997).
8. L. Storasta, J. P. Bergman, E. Janźn, A. Henry, and J. Lu, J. Appl. Phys. 0021-8979 10.1063/1.1778819 96, 4909 (2004).
9. G. Alfieri, E. V. Monakhov, B. G. Svensson, and M. K. Linnarsson, J. Appl. Phys. 0021-8979 10.1063/1.2009816 98, 043518 (2005).
10. S. A. Reshanov, O. Klettke, and G. Pensl, Mater. Sci. Forum 433-436, 379 (2003).
11. M. Gong, S. Fang, C. D. Beling, and Z. You, J. Appl. Phys. 0021-8979 10.1063/1.370520 85, 7120 (1999).
12. L. Storasta, I. Kamata, T. Nakamura, and H. Tsuchida, Mater. Sci. Forum 527-529, 489 (2006).
13. K. Danno, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 0003-6951 10.1063/1.1886904 86, 122104 (2005).
14. K. Danno and T. Kimoto, Jpn. J. Appl. Phys., Part 2 45, L285 (2006). 0021-4922
15. S. Weiss and R. Kassing, Solid-State Electron. 0038-1101 10.1016/0038-1101(88)90071-8 31, 1733 (1988).
16. S. D. Brotherton, Solid-State Electron. 0038-1101 10.1016/0038-1101(83) 90073-4 26, 987 (1983).
17. H. J. von Bardeleben, J. L. Cantin, L. Henry, and M. F. Barthe, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.10841 62, 10841 (2000).
18. W. Suttrop, G. Pensl, and P. Lanig, Appl. Phys. A 51, 231 (1990).
19. T. Troffer, M. Schadt, T. Frank, H. Itoh, G. Pensl, J. Heindl, H. P. Strunk, and M. Maier, Phys. Status Solidi A 162, 277 (1997).
20. T. Frank, T. Troffer, G. Pensl, N. Nordell, S. Karlsson, and A. Schöner, Mater. Sci. Forum 264-268, 681 (1998).
21. R. Kumar, J. Kozima, and T. Yamamoto, Jpn. J. Appl. Phys., Part 1 0021-4922 10.1143/JJAP.39.2001 39, 2001 (2000).
22. K. Danno and T. Kimoto, Mater. Sci. Forum 527-529, 501 (2006).
23. M. Bockstedte, A. Mattausch, and O. Pankratov, in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer, Berlin, 2003), pp. 27-55.
24. F. Gao, W. J. Weber, M. Posselt, and V. Belko, Mater. Sci. Forum 457-460, 457 (2004).
25. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordell, Phys. Status Solidi A 162, 199 (1997).
26. K. Danno and T. Kimoto, J. Appl. Phys. 0021-8979 10.1063/1.2401658 100, 113728 (2006).