Design and evaluation of a compact silicon carbide photoconductive semiconductor switch

IEEE Transactions on Electron Devices

Volumn 58, Issue 2, 2011, Pages 508-511

  James, Colt ^a   Hettler, Cameron ^a   Dickens, James ^a  

^a Texas Tech University   (United States)

Author keywords

Photoconducting devices; photoconductivity; power semiconductor switches; silicon carbide

Indexed keywords

AS-GROWN; EXCITATION ENERGY LEVEL; EXCITATION WAVELENGTH; HIGH-POWER; HIGH-PURITY SEMI-INSULATING; HIGH-VOLTAGES; ON-STATE RESISTANCE; OPTICAL TRIGGERING; ORDERS OF MAGNITUDE; PHOTOCONDUCTIVE SEMICONDUCTOR SWITCHES; PHOTOCONDUCTIVE SWITCHES; POWER SEMICONDUCTOR SWITCHES; SWITCH GEOMETRIES; VISIBLE WAVELENGTHS;

ELECTRIC SWITCHGEAR; EXCITED STATES; LASER EXCITATION; OPTICAL PARAMETRIC OSCILLATORS; PARAMETRIC OSCILLATORS; PHOTOCONDUCTING DEVICES; PHOTOCONDUCTIVITY; POWER ELECTRONICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTOR SWITCHES; SILICON CARBIDE; SILICON WAFERS; SWITCHES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79151471791     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2089689     Document Type: Article

References (12)

1. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Eds., Properties of Advanced Semiconductor Materials. New York: Wiley, 2001.
2. R. J. Kumar, J. M. Borrego, R. J. Gutmann, J. R. Jenny, D. P. Malta, H. M. Hobgood, and C. H. Carter, Jr., "Microwave photoconductivity decay characterization of high-purity 4H-SiC substrates," J. Appl. Phys., vol. 102, no. 1, p. 013 704, Jul. 2007.
3. F. Zhao, M. M. Islam, P. Muzykov, A. Bolotnikov, and T. S. Sudarshan, "Optically activated 4H-SiC p-i-n diodes for high-power applications," IEEE Electron Device Lett., vol. 30, no. 11, pp. 1182-1184, Nov. 2009.
4. S. Sheng, M. G. Spencer, X. Tang, P. Zhou, and G. L. Harris, "Polycrystalline cubic silicon carbide photoconductive switch," IEEE Electron Device Lett., vol. 18, no. 8, pp. 372-374, Aug. 1997.
5. S. Dogan, A. Teke, D. Huang, H. Morkoc, C. B. Roberts, J. Parish, B. Ganguly, M. Smith, R. E. Myers, and S. E. Saddow, "4H-SiC photoconductive switching devices for use in high-power applications," Appl. Phys. Lett., vol. 82, no. 18, pp. 3107-3109, May 2003.
6. H. Y. Cha and P. M. Sandvik, "Electrical and optical modeling of 4H-SiC avalanche photodiodes," Jpn. J. Appl. Phys., vol. 47, no. 7, pp. 5423-5425, Jul. 2008.
7. C. Hettler, C. James, J. Dickens, and A. Neuber, "Carrier lifetime studies of semi-insulating silicon carbide for photoconductive switch applications," in Proc. IEEE Int. Power Modulators Conf., May 2010.
8. G. Tamulaitis, I. Yilmax, M. S. Shur, T. Anderson, and R. Gaska, "Carrier lifetime in conductive and vanadium-doped 6H-SiC," Appl. Phys. Lett., vol. 84, no. 3, pp. 335-338, Jan. 2004.
9. K. Zhu, S. Dogan, Y. T. Moon, J. Leach, F. Yun, D. Johnstone, H.Morkoc, G. Li, and B. Ganguly, "Effect of n+-GaN subcontact layer on 4H-SiC high-power photoconductive switch," Appl. Phys. Lett., vol. 86, no. 26, pp. 261 108-1-261 108-3, Jun. 2005.
10. M. Parrish, private communication, 2010.
11. W. C. Nunnally, Picosecond Optoelectronic Devices, C. H. Lee, Ed. New York: Academic, 1984.
12. T. V. Blank, Y. A. Goldberg, E. V. Kalinina, O. V. Konstantinov, A. O. Konstantinov, and A. Hallen, "Temperature dependence of the photoelectric conversion quantum efficiency of 4H-SiC Schottky UV photodetectors," Semicond. Sci. Technol., vol. 20, no. 8, pp. 710-715, May 2005.